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onsemi BD437G NPN Transistor, 4 A, 45 V dc, 3-Pin TO-225

onsemi BD437G NPN Transistor, 4 A, 45 V dc, 3-Pin TO-225, Mounting Type: Through Hole, Maximum Power Dissipation: 36 W, Transistor Configuration: Single, Maximum Operating Frequency: 1 MHz, Dimensions: 7.8 x 3 x 11.1mm

GBP 0.32

1

onsemi BD437G NPN Transistor, 4 A, 45 V dc, 3-Pin TO-225

onsemi BD437G NPN Transistor, 4 A, 45 V dc, 3-Pin TO-225, Mounting Type: Through Hole, Maximum Power Dissipation: 36 W, Transistor Configuration: Single, Maximum Operating Frequency: 1 MHz, Dimensions: 7.8 x 3 x 11.1mm

GBP 0.53

1

onsemi MJD117T4G PNP Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

onsemi MJD117T4G PNP Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK, Maximum Emitter Base Voltage: 5 V, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 0.02mA, Dimensions: 6.73 x 6.22 x 2.38mm

GBP 0.59

1

onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK, Maximum Emitter Base Voltage: 5 V, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 0.02mA, Dimensions: 6.73 x 6.22 x 2.38mm

GBP 0.50

1

onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK, Maximum Emitter Base Voltage: 5 V, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 0.02mA, Dimensions: 6.73 x 6.22 x 2.38mm

GBP 0.19

1

onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK, Maximum Emitter Base Voltage: 5 V, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 0.02mA, Dimensions: 6.73 x 6.22 x 2.38mm

GBP 0.50

1

onsemi 2N6039G NPN Darlington Transistor, 4 A 80 V HFE:100, 3-Pin TO-225AA

onsemi 2N6039G NPN Darlington Transistor, 4 A 80 V HFE:100, 3-Pin TO-225AA, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 100µA, Dimensions: 11.04 x 7.74 x 2.66mm

GBP 0.30

1

onsemi 2N6038G NPN Darlington Transistor, 4 A 60 V HFE:100, 3-Pin TO-225AA

onsemi 2N6038G NPN Darlington Transistor, 4 A 60 V HFE:100, 3-Pin TO-225AA, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 100µA, Dimensions: 11.04 x 7.74 x 2.66mm

GBP 0.41

1

onsemi 2N6038G NPN Darlington Transistor, 4 A 60 V HFE:100, 3-Pin TO-225AA

onsemi 2N6038G NPN Darlington Transistor, 4 A 60 V HFE:100, 3-Pin TO-225AA, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 100µA, Dimensions: 11.04 x 7.74 x 2.66mm

GBP 0.63

1

onsemi 2N6039G NPN Darlington Transistor, 4 A 80 V HFE:100, 3-Pin TO-225AA

onsemi 2N6039G NPN Darlington Transistor, 4 A 80 V HFE:100, 3-Pin TO-225AA, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 100µA, Dimensions: 11.04 x 7.74 x 2.66mm

GBP 0.57

1

onsemi 2N6039G NPN Darlington Transistor, 4 A 80 V HFE:100, 3-Pin TO-225AA

onsemi 2N6039G NPN Darlington Transistor, 4 A 80 V HFE:100, 3-Pin TO-225AA, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 100µA, Dimensions: 11.04 x 7.74 x 2.66mm

GBP 0.47

1

onsemi 2N6038G NPN Darlington Transistor, 4 A 60 V HFE:100, 3-Pin TO-225AA

onsemi 2N6038G NPN Darlington Transistor, 4 A 60 V HFE:100, 3-Pin TO-225AA, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 100µA, Dimensions: 11.04 x 7.74 x 2.66mm

GBP 0.76

1

onsemi MJD117G PNP Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

onsemi MJD117G PNP Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK, Maximum Emitter Base Voltage: 5 V, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 0.02mA, Dimensions: 6.73 x 6.22 x 2.38mm, MPN: MJD117T4G

GBP 0.23

1

onsemi BD437G NPN Transistor, 4 A, 45 V dc, 3-Pin TO-225

onsemi BD437G NPN Transistor, 4 A, 45 V dc, 3-Pin TO-225, Mounting Type: Through Hole, Maximum Power Dissipation: 36 W, Minimum DC Current Gain: 30, Transistor Configuration: Single, Maximum Operating Frequency: 1 MHz, Dimensions: 7.8 x 3 x 11.1mm

GBP 0.37

1

onsemi QED223, 880nm IR Emitting Diode, 5mm (T-1 3/4) Through Hole package

onsemi QED223, 880nm IR Emitting Diode, 5mm (T-1 3/4) Through Hole package, Dimensions: 4.95 (Dia.) x 8.77 (H)mm

GBP 0.33

1

onsemi QED223, 880nm IR Emitting Diode, 5mm (T-1 3/4) Through Hole package

onsemi QED223, 880nm IR Emitting Diode, 5mm (T-1 3/4) Through Hole package, Dimensions: 4.95 (Dia.) x 8.77 (H)mm

GBP 0.48

1

onsemi QED223, 880nm IR Emitting Diode, 5mm (T-1 3/4) Through Hole package

onsemi QED223, 880nm IR Emitting Diode, 5mm (T-1 3/4) Through Hole package, Dimensions: 4.95 (Dia.) x 8.77 (H)mm

GBP 0.31

1

onsemi BD682G PNP Transistor, 4 A, 100 V dc, 3-Pin TO-225

onsemi BD682G PNP Transistor, 4 A, 100 V dc, 3-Pin TO-225, Mounting Type: Through Hole, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 7.8 x 3 x 11.1mm

GBP 0.58

1

onsemi BD682G PNP Transistor, 4 A, 100 V dc, 3-Pin TO-225

onsemi BD682G PNP Transistor, 4 A, 100 V dc, 3-Pin TO-225, Mounting Type: Through Hole, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 7.8 x 3 x 11.1mm

GBP 0.35

1

onsemi 2N5191G NPN Transistor, 4 A, 60 V dc, 3-Pin TO-225

onsemi 2N5191G NPN Transistor, 4 A, 60 V dc, 3-Pin TO-225, Mounting Type: Through Hole, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 7.8 x 3 x 11.1mm

GBP 0.48

1

onsemi MJE802G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225

onsemi MJE802G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225, Mounting Type: Through Hole, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 7.8 x 3 x 11.1mm

GBP 0.28

1

onsemi 2N5191G NPN Transistor, 4 A, 60 V dc, 3-Pin TO-225

onsemi 2N5191G NPN Transistor, 4 A, 60 V dc, 3-Pin TO-225, Mounting Type: Through Hole, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 7.8 x 3 x 11.1mm

GBP 0.32

1

onsemi 2N5191G NPN Transistor, 4 A, 60 V dc, 3-Pin TO-225

onsemi 2N5191G NPN Transistor, 4 A, 60 V dc, 3-Pin TO-225, Mounting Type: Through Hole, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 7.8 x 3 x 11.1mm

GBP 0.35

1

onsemi 2N5192G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225

onsemi 2N5192G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225, Mounting Type: Through Hole, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 7.8 x 3 x 11.1mm

GBP 0.51

1

onsemi MJE800G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225

onsemi MJE800G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225, Mounting Type: Through Hole, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 7.8 x 3 x 11.1mm

GBP 0.26

1

DIGITAL MARKETING

Brand

Gender

Merchant

Price (EUR)

onsemi BD437G NPN Transistor, 4 A, 45 V dc, 3-Pin TO-225

onsemi BD437G NPN Transistor, 4 A, 45 V dc, 3-Pin TO-225

onsemi MJD117T4G PNP Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

onsemi 2N6039G NPN Darlington Transistor, 4 A 80 V HFE:100, 3-Pin TO-225AA

onsemi 2N6038G NPN Darlington Transistor, 4 A 60 V HFE:100, 3-Pin TO-225AA

onsemi 2N6038G NPN Darlington Transistor, 4 A 60 V HFE:100, 3-Pin TO-225AA

onsemi 2N6039G NPN Darlington Transistor, 4 A 80 V HFE:100, 3-Pin TO-225AA

onsemi 2N6039G NPN Darlington Transistor, 4 A 80 V HFE:100, 3-Pin TO-225AA

onsemi 2N6038G NPN Darlington Transistor, 4 A 60 V HFE:100, 3-Pin TO-225AA

onsemi MJD117G PNP Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

onsemi BD437G NPN Transistor, 4 A, 45 V dc, 3-Pin TO-225

onsemi QED223, 880nm IR Emitting Diode, 5mm (T-1 3/4) Through Hole package

onsemi QED223, 880nm IR Emitting Diode, 5mm (T-1 3/4) Through Hole package

onsemi QED223, 880nm IR Emitting Diode, 5mm (T-1 3/4) Through Hole package

onsemi BD682G PNP Transistor, 4 A, 100 V dc, 3-Pin TO-225

onsemi BD682G PNP Transistor, 4 A, 100 V dc, 3-Pin TO-225

onsemi 2N5191G NPN Transistor, 4 A, 60 V dc, 3-Pin TO-225

onsemi MJE802G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225

onsemi 2N5191G NPN Transistor, 4 A, 60 V dc, 3-Pin TO-225

onsemi 2N5191G NPN Transistor, 4 A, 60 V dc, 3-Pin TO-225

onsemi 2N5192G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225

onsemi MJE800G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225

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