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onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Dimensions: 15.6 x 4.7 x 20.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.10

1

onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Dimensions: 15.6 x 4.7 x 20.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.83

1

onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Length: 15.6mm, Width: 4.7mm, Height: 20.6mm, Dimensions: 15.6 x 4.7 x 20.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.68

1

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.19mm, Length: 10.16mm

GBP 1.17

1

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.19mm, Length: 10.16mm

GBP 0.52

1

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.19mm, Length: 10.16mm

GBP 0.53

1

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin DPAK FCD600N60Z

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin DPAK FCD600N60Z, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 89 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +30 V, Number of Elements per Chip: 1, Height: 2.39mm, Length: 6.73mm

GBP 1.18

1

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin DPAK FCD600N60Z

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin DPAK FCD600N60Z, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 89 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +30 V, Number of Elements per Chip: 1, Height: 2.39mm, Length: 6.73mm

GBP 0.39

1

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin TO-220F FCPF600N60Z

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin TO-220F FCPF600N60Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +30 V, Number of Elements per Chip: 1, Height: 16.07mm, Length: 10.36mm

GBP 1.20

1

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin TO-220F FCPF600N60Z

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin TO-220F FCPF600N60Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +30 V, Number of Elements per Chip: 1, Height: 16.07mm, Length: 10.36mm

GBP 1.41

1

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin TO-220F FCPF600N60Z

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin TO-220F FCPF600N60Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +30 V, Number of Elements per Chip: 1, Height: 16.07mm, Length: 10.36mm

GBP 1.41

1

onsemi MMBT2222ALT1G NPN Transistor, 600 mA, 30 V, 3-Pin SOT-23

onsemi MMBT2222ALT1G NPN Transistor, 600 mA, 30 V, 3-Pin SOT-23, Maximum DC Collector Current: 600 (Continuous) mA, Mounting Type: Surface Mount, Maximum Power Dissipation: 225 mW, Minimum DC Current Gain: 35, Transistor Configuration: Single, Maximum Collector Base Voltage: 60 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 100 MHz, Automotive Standard: AEC-Q101, Dimensions: 3.04 x 1.4 x 1.01mm

GBP 0.04

1

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin DPAK FCD600N60Z

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin DPAK FCD600N60Z, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 89 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 2.39mm, Length: 6.73mm

GBP 0.59

1

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK FCD7N60TM

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK FCD7N60TM, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V, Height: 2.39mm

GBP 1.17

1

onsemi MMBT2222AWT1G NPN Transistor, 600 mA, 40 V, 3-Pin SC-70

onsemi MMBT2222AWT1G NPN Transistor, 600 mA, 40 V, 3-Pin SC-70, Maximum DC Collector Current: 600 (Continuous) mA, Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Minimum DC Current Gain: 35, Transistor Configuration: Single, Maximum Collector Base Voltage: 75 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Automotive Standard: AEC-Q101, Dimensions: 2.2 x 1.35 x 0.9mm

GBP 0.05

1

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK FCD7N60TM

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK FCD7N60TM, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V, Height: 2.39mm

GBP 1.35

1

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK FCD7N60TM

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK FCD7N60TM, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V, Height: 2.39mm

GBP 0.58

1

onsemi FSBB20CH60C Motor Driver IC, 600 V 27-Pin, SPM27 CC

onsemi FSBB20CH60C Motor Driver IC, 600 V 27-Pin, SPM27 CC, Mounting Type: Through Hole, Dimensions: 44 x 26.8 x 5.5mm, Length: 44mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 13.37

1

onsemi FSBB20CH60C Motor Driver IC, 600 V 27-Pin, SPM27 CC

onsemi FSBB20CH60C Motor Driver IC, 600 V 27-Pin, SPM27 CC, Mounting Type: Through Hole, Dimensions: 44 x 26.8 x 5.5mm, Length: 44mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 14.27

1

onsemi FSBB20CH60C Motor Driver IC, 600 V 27-Pin, SPM27 CC

onsemi FSBB20CH60C Motor Driver IC, 600 V 27-Pin, SPM27 CC, Mounting Type: Through Hole, Dimensions: 44 x 26.8 x 5.5mm, Length: 44mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 15.16

1

onsemi, 150V Zener Diode 600 W SMT 2-Pin SMA

onsemi, 150V Zener Diode 600 W SMT 2-Pin SMA, Diode Configuration: Single, Mounting Type: Surface Mount, Zener Type: Voltage Regulator, Test Current: 5mA, Maximum Zener Impedance: 300Ω, Maximum Reverse Leakage Current: 1µA, Length: 4.57mm, Width: 2.92mm, Dimensions: 4.57 x 2.92 x 2.41mm, MPN: BZG03C150G

GBP 0.15

1

onsemi KSC5502DTTU NPN Digital Transistor, 600 V, 3-Pin TO-220

onsemi KSC5502DTTU NPN Digital Transistor, 600 V, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 118.16 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 12 V, Dimensions: 10.67 x 4.7 x 9.4mm, Maximum Collector Emitter Saturation Voltage: 3 V

GBP 0.33

1

onsemi KSC5502DTTU NPN Digital Transistor, 600 V, 3-Pin TO-220

onsemi KSC5502DTTU NPN Digital Transistor, 600 V, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 118.16 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 12 V, Dimensions: 10.67 x 4.7 x 9.4mm, Maximum Collector Emitter Saturation Voltage: 3 V

GBP 0.33

1

onsemi SMMBT5551LT1G NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23

onsemi SMMBT5551LT1G NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 6 V, Automotive Standard: AEC-Q101, Dimensions: 3.04 x 1.4 x 1.01mm

GBP 0.11

1

onsemi, 150V Zener Diode 600 W SMT 2-Pin SMA

onsemi, 150V Zener Diode 600 W SMT 2-Pin SMA, Diode Configuration: Single, Mounting Type: Surface Mount, Zener Type: Voltage Regulator, Test Current: 5mA, Maximum Zener Impedance: 300Ω, Maximum Reverse Leakage Current: 1µA, Dimensions: 4.57 x 2.92 x 2.41mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -65 °C, MPN: BZG03C150G

GBP 0.22

1

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onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin DPAK FCD600N60Z

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin DPAK FCD600N60Z

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin TO-220F FCPF600N60Z

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin TO-220F FCPF600N60Z

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin TO-220F FCPF600N60Z

onsemi MMBT2222ALT1G NPN Transistor, 600 mA, 30 V, 3-Pin SOT-23

onsemi N-Channel MOSFET, 7.4 A, 600 V, 3-Pin DPAK FCD600N60Z

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK FCD7N60TM

onsemi MMBT2222AWT1G NPN Transistor, 600 mA, 40 V, 3-Pin SC-70

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK FCD7N60TM

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK FCD7N60TM

onsemi FSBB20CH60C Motor Driver IC, 600 V 27-Pin, SPM27 CC

onsemi FSBB20CH60C Motor Driver IC, 600 V 27-Pin, SPM27 CC

onsemi FSBB20CH60C Motor Driver IC, 600 V 27-Pin, SPM27 CC

onsemi, 150V Zener Diode 600 W SMT 2-Pin SMA

onsemi KSC5502DTTU NPN Digital Transistor, 600 V, 3-Pin TO-220

onsemi KSC5502DTTU NPN Digital Transistor, 600 V, 3-Pin TO-220

onsemi SMMBT5551LT1G NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23

onsemi, 150V Zener Diode 600 W SMT 2-Pin SMA

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