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onsemi NCP3284AMNTXG, 1, Voltage Regulator 35A, 1000 kHz 37-Pin, PQFN

GBP 1.48

1

onsemi NCP3284AMNTXG, 1, Voltage Regulator 35A, 1000 kHz 37-Pin, PQFN

onsemi NCP3284AMNTXG, 1, Voltage Regulator 35A, 1000 kHz 37-Pin, PQFN, Regulator Function: Buck, Accuracy: 5%, Output Type: Fixed

GBP 1.62

1

onsemi NCP3284AMNTXG, 1, Voltage Regulator 35A, 1000 kHz 37-Pin, PQFN

onsemi NCP3284AMNTXG, 1, Voltage Regulator 35A, 1000 kHz 37-Pin, PQFN, Regulator Function: Buck, Accuracy: 5%, Output Type: Fixed

GBP 1.50

1

onsemi NCP1207APG, PWM Controller, 20 V, 1000 kHz 8-Pin, PDIP

onsemi NCP1207APG, PWM Controller, 20 V, 1000 kHz 8-Pin, PDIP, Output Current: 500 mA, Fall Time: 20ns, Mounting Type: Through Hole, Rise Time: 40ns, Topology: Flyback, Dimensions: 10.16 x 7.11 x 4.95mm, Maximum Duty Cycle: 28.6%, Length: 10.16mm, PWM Controller Type: Current Mode, Width: 7.11mm

GBP 0.75

1

onsemi NCP1207APG, PWM Controller, 20 V, 1000 kHz 8-Pin, PDIP

onsemi NCP1207APG, PWM Controller, 20 V, 1000 kHz 8-Pin, PDIP, Output Current: 500 mA, Fall Time: 20ns, Mounting Type: Through Hole, Rise Time: 40ns, Topology: Flyback, Dimensions: 10.16 x 7.11 x 4.95mm, Maximum Duty Cycle: 28.6%, Length: 10.16mm, PWM Controller Type: Current Mode, Width: 7.11mm

GBP 0.79

1

onsemi ULN2003ADR2G NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC

onsemi ULN2003ADR2G NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC, Mounting Type: Surface Mount, Configuration: Single, Maximum Collector Emitter Saturation Voltage: 1.1 V dc, Maximum Collector Cut-off Current: 50µA, Base Current: 25mA, Dimensions: 10 x 4 x 1.5mm

GBP 0.29

1

onsemi ULN2003ADR2G NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC

onsemi ULN2003ADR2G NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC, Mounting Type: Surface Mount, Configuration: Single, Maximum Collector Emitter Saturation Voltage: 1.1 V dc, Maximum Collector Cut-off Current: 50µA, Base Current: 25mA, Dimensions: 10 x 4 x 1.5mm

GBP 0.17

1

onsemi ULN2003ADR2G NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC

onsemi ULN2003ADR2G NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC, Mounting Type: Surface Mount, Configuration: Single, Maximum Collector Emitter Saturation Voltage: 1.1 V dc, Maximum Collector Cut-off Current: 50µA, Base Current: 25mA, Dimensions: 10 x 4 x 1.5mm

GBP 0.42

1

onsemi N-Channel MOSFET, 1.6 A, 1000 V, 3-Pin DPAK FQD2N100TM

onsemi N-Channel MOSFET, 1.6 A, 1000 V, 3-Pin DPAK FQD2N100TM, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 2.3mm, Length: 6.6mm

GBP 0.39

1

onsemi N-Channel MOSFET, 1.6 A, 1000 V, 3-Pin DPAK FQD2N100TM

onsemi N-Channel MOSFET, 1.6 A, 1000 V, 3-Pin DPAK FQD2N100TM, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 2.3mm, Length: 6.6mm

GBP 0.80

1

onsemi N-Channel MOSFET, 1.6 A, 1000 V, 3-Pin DPAK FQD2N100TM

onsemi N-Channel MOSFET, 1.6 A, 1000 V, 3-Pin DPAK FQD2N100TM, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 2.3mm, Length: 6.6mm

GBP 0.91

1

onsemi N-Channel MOSFET, 8 A, 1000 V, 3-Pin TO-3PN FQA8N100C

onsemi N-Channel MOSFET, 8 A, 1000 V, 3-Pin TO-3PN FQA8N100C, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.45 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 225 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 18.9mm, Length: 15.8mm

GBP 3.60

1

onsemi N-Channel MOSFET, 8 A, 1000 V, 3-Pin TO-3PN FQA8N100C

onsemi N-Channel MOSFET, 8 A, 1000 V, 3-Pin TO-3PN FQA8N100C, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.45 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 225 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 18.9mm, Length: 15.8mm

GBP 3.15

1

onsemi N-Channel MOSFET, 8 A, 1000 V, 3-Pin TO-3PN FQA8N100C

onsemi N-Channel MOSFET, 8 A, 1000 V, 3-Pin TO-3PN FQA8N100C, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.45 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 225 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 18.9mm, Length: 15.8mm

GBP 3.71

1

onsemi NCV8165ML330TBGOS, 1 Low Dropout Voltage, Voltage Regulator 1000 (Typ)mA 8-Pin, DFNW

onsemi NCV8165ML330TBGOS, 1 Low Dropout Voltage, Voltage Regulator 1000 (Typ)mA 8-Pin, DFNW, Output Voltage: 3.3 V, Line Regulation: 0.09 mV/V, Accuracy: ±2%, Load Regulation: 0.01 mV/mA, Mounting Type: Surface Mount, Polarity: Negative, Positive, Quiescent Current: 18µA, Output Type: Fixed, Dimensions: 3.1 x 3.1 x 0.95mm

GBP 0.59

1

onsemi NCV8165ML330TBGOS, 1 Low Dropout Voltage, Voltage Regulator 1000 (Typ)mA 8-Pin, DFNW

onsemi NCV8165ML330TBGOS, 1 Low Dropout Voltage, Voltage Regulator 1000 (Typ)mA 8-Pin, DFNW, Output Voltage: 3.3 V, Line Regulation: 0.09 mV/V, Accuracy: ±2%, Load Regulation: 0.01 mV/mA, Mounting Type: Surface Mount, Polarity: Negative, Positive, Quiescent Current: 18µA, Output Type: Fixed, Dimensions: 3.1 x 3.1 x 0.95mm

GBP 0.45

1

onsemi TIP127G PNP Darlington Transistor, 5 A 100 V HFE:1000, 3-Pin TO-220AB

onsemi TIP127G PNP Darlington Transistor, 5 A 100 V HFE:1000, 3-Pin TO-220AB, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Collector Cut-off Current: 0.2mA, Dimensions: 10.28 x 4.82 x 9.28mm

GBP 0.64

1

onsemi TIP120G NPN Darlington Transistor, 8 A 60 V HFE:1000, 3-Pin TO-220

onsemi TIP120G NPN Darlington Transistor, 8 A 60 V HFE:1000, 3-Pin TO-220, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Collector Cut-off Current: 0.5mA, Dimensions: 15.75 x 10.28 x 4.82mm

GBP 0.54

1

onsemi TIP122G NPN Darlington Transistor, 8 A 100 V HFE:1000, 3-Pin TO-220

onsemi TIP122G NPN Darlington Transistor, 8 A 100 V HFE:1000, 3-Pin TO-220, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Collector Cut-off Current: 0.5mA, Dimensions: 15.75 x 10.28 x 4.82mm

GBP 0.52

1

onsemi TIP127G PNP Darlington Transistor, 5 A 100 V HFE:1000, 3-Pin TO-220AB

onsemi TIP127G PNP Darlington Transistor, 5 A 100 V HFE:1000, 3-Pin TO-220AB, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Collector Cut-off Current: 0.2mA, Dimensions: 10.28 x 4.82 x 9.28mm

GBP 0.72

1

onsemi TIP120G NPN Darlington Transistor, 8 A 60 V HFE:1000, 3-Pin TO-220

onsemi TIP120G NPN Darlington Transistor, 8 A 60 V HFE:1000, 3-Pin TO-220, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Collector Cut-off Current: 0.5mA, Dimensions: 15.75 x 10.28 x 4.82mm

GBP 0.39

1

onsemi TIP120G NPN Darlington Transistor, 8 A 60 V HFE:1000, 3-Pin TO-220

onsemi TIP120G NPN Darlington Transistor, 8 A 60 V HFE:1000, 3-Pin TO-220, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Collector Cut-off Current: 0.5mA, Dimensions: 15.75 x 10.28 x 4.82mm

GBP 0.54

1

onsemi MJF122G NPN Darlington Transistor, 8 A 100 V HFE:1000, 3-Pin TO-220FP

onsemi MJF122G NPN Darlington Transistor, 8 A 100 V HFE:1000, 3-Pin TO-220FP, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 3.5 V dc, Maximum Collector Cut-off Current: 10µA, Dimensions: 10.63 x 4.9 x 16.12mm

GBP 0.61

1

onsemi MJF122G NPN Darlington Transistor, 8 A 100 V HFE:1000, 3-Pin TO-220

onsemi MJF122G NPN Darlington Transistor, 8 A 100 V HFE:1000, 3-Pin TO-220, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 3.5 V dc, Maximum Collector Cut-off Current: 10µA, Dimensions: 10.63 x 4.9 x 16.12mm

GBP 0.74

1

onsemi MC1413BDG 5 NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC

onsemi MC1413BDG 5 NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC, Maximum Emitter Base Voltage: 30 V, Mounting Type: Surface Mount, Transistor Configuration: Common Emitter, Maximum Collector Emitter Saturation Voltage: 1.6 V, Dimensions: 10 x 4 x 1.5mm, Length: 10mm, Maximum Operating Temperature: +85 °C

GBP 0.42

1

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onsemi NCP3284AMNTXG, 1, Voltage Regulator 35A, 1000 kHz 37-Pin, PQFN

onsemi NCP3284AMNTXG, 1, Voltage Regulator 35A, 1000 kHz 37-Pin, PQFN

onsemi NCP3284AMNTXG, 1, Voltage Regulator 35A, 1000 kHz 37-Pin, PQFN

onsemi NCP1207APG, PWM Controller, 20 V, 1000 kHz 8-Pin, PDIP

onsemi NCP1207APG, PWM Controller, 20 V, 1000 kHz 8-Pin, PDIP

onsemi ULN2003ADR2G NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC

onsemi ULN2003ADR2G NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC

onsemi ULN2003ADR2G NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC

onsemi N-Channel MOSFET, 1.6 A, 1000 V, 3-Pin DPAK FQD2N100TM

onsemi N-Channel MOSFET, 1.6 A, 1000 V, 3-Pin DPAK FQD2N100TM

onsemi N-Channel MOSFET, 1.6 A, 1000 V, 3-Pin DPAK FQD2N100TM

onsemi N-Channel MOSFET, 8 A, 1000 V, 3-Pin TO-3PN FQA8N100C

onsemi N-Channel MOSFET, 8 A, 1000 V, 3-Pin TO-3PN FQA8N100C

onsemi N-Channel MOSFET, 8 A, 1000 V, 3-Pin TO-3PN FQA8N100C

onsemi NCV8165ML330TBGOS, 1 Low Dropout Voltage, Voltage Regulator 1000 (Typ)mA 8-Pin, DFNW

onsemi NCV8165ML330TBGOS, 1 Low Dropout Voltage, Voltage Regulator 1000 (Typ)mA 8-Pin, DFNW

onsemi TIP127G PNP Darlington Transistor, 5 A 100 V HFE:1000, 3-Pin TO-220AB

onsemi TIP120G NPN Darlington Transistor, 8 A 60 V HFE:1000, 3-Pin TO-220

onsemi TIP122G NPN Darlington Transistor, 8 A 100 V HFE:1000, 3-Pin TO-220

onsemi TIP127G PNP Darlington Transistor, 5 A 100 V HFE:1000, 3-Pin TO-220AB

onsemi TIP120G NPN Darlington Transistor, 8 A 60 V HFE:1000, 3-Pin TO-220

onsemi TIP120G NPN Darlington Transistor, 8 A 60 V HFE:1000, 3-Pin TO-220

onsemi MJF122G NPN Darlington Transistor, 8 A 100 V HFE:1000, 3-Pin TO-220FP

onsemi MJF122G NPN Darlington Transistor, 8 A 100 V HFE:1000, 3-Pin TO-220

onsemi MC1413BDG 5 NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC

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