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onsemi N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK-7L NTBG080N120SC1

GBP 8.37

1

onsemi SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247 NVH4L080N120SC1

GBP 8.37

1

onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247 NTH4L160N120SC1

GBP 8.33

1

onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247 NVH4L160N120SC1

GBP 5.80

1

onsemi N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK-7L NTBG160N120SC1

GBP 8.33

1

onsemi SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247 NVHL160N120SC1

GBP 7.31

1

onsemi SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A

GBP 8.37

1

onsemi N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK-7L NTBG080N120SC1

onsemi N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK-7L NTBG080N120SC1, Maximum Drain Source Resistance: 110 mΩ, Maximum Gate Threshold Voltage: 4.3V

GBP 8.56

1

onsemi SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 3-Pin TO-247 ON Semiconductor NTHL160N120SC1

GBP 8.33

1

onsemi SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247 NVH4L080N120SC1

onsemi SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247 NVH4L080N120SC1, Maximum Drain Source Resistance: 0.08 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 7.54

1

onsemi SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247 NVHL160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247 NVHL160N120SC1, Maximum Drain Source Resistance: 0.16 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 8.48

1

onsemi SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247 NVHL160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247 NVHL160N120SC1, Maximum Drain Source Resistance: 0.16 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 6.34

1

onsemi SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 3-Pin TO-247 NTHL160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 3-Pin TO-247 NTHL160N120SC1, Maximum Drain Source Resistance: 0.11 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 7.71

1

onsemi N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK-7L NTBG160N120SC1

onsemi N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK-7L NTBG160N120SC1, Maximum Drain Source Resistance: 225 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 8.33

1

onsemi SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247 NTH4L080N120SC1

onsemi SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247 NTH4L080N120SC1, Maximum Drain Source Resistance: 0.11 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 8.56

1

onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247 NTH4L160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247 NTH4L160N120SC1, Maximum Drain Source Resistance: 0.224 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 8.33

1

onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247 NVH4L160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247 NVH4L160N120SC1, Maximum Drain Source Resistance: 0.16 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 6.42

1

onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247 NVH4L160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247 NVH4L160N120SC1, Maximum Drain Source Resistance: 0.16 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 4.81

1

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±25V, Transistor Configuration: Single, Dimensions: 20 x 5 x 26mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.04

1

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±25V, Transistor Configuration: Single, Dimensions: 20 x 5 x 26mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.83

1

onsemi SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A

onsemi SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 8.56

1

onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 555 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.92

1

onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 555 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.71

1

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±25V, Transistor Configuration: Single, Length: 20mm, Width: 5mm, Height: 26mm, Dimensions: 20 x 5 x 26mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.25

1

onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 535 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 16.25 x 5.3 x 21.4mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 7.84

1

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onsemi N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK-7L NTBG080N120SC1

onsemi SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247 NVH4L080N120SC1

onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247 NTH4L160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247 NVH4L160N120SC1

onsemi N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK-7L NTBG160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247 NVHL160N120SC1

onsemi SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A

onsemi N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK-7L NTBG080N120SC1

onsemi SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 3-Pin TO-247 ON Semiconductor NTHL160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247 NVH4L080N120SC1

onsemi SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247 NVHL160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247 NVHL160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 3-Pin TO-247 NTHL160N120SC1

onsemi N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK-7L NTBG160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247 NTH4L080N120SC1

onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247 NTH4L160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247 NVH4L160N120SC1

onsemi SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247 NVH4L160N120SC1

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A

onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

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