onsemi N-Channel MOSFET, 21 A, 80 V, 5-Pin DFN NVMFS6H864NT1G
onsemi N-Channel MOSFET, 21 A, 80 V, 5-Pin DFN NVMFS6H864NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 32 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101