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onsemi N-Channel MOSFET, 380 mA, 500 V, 3-Pin TO-92 FQN1N50CTA

onsemi N-Channel MOSFET, 380 mA, 500 V, 3-Pin TO-92 FQN1N50CTA, Mounting Type: Through Hole, Maximum Drain Source Resistance: 6 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 2.08 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 5.33mm, Length: 5.2mm

GBP 0.39

1

onsemi N-Channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 2N7002KT1G

onsemi N-Channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 2N7002KT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Maximum Power Dissipation: 420 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.01mm, Length: 3.04mm

GBP 0.03

1

onsemi N-Channel MOSFET, 380 mA, 500 V, 3-Pin TO-92 FQN1N50CTA

onsemi N-Channel MOSFET, 380 mA, 500 V, 3-Pin TO-92 FQN1N50CTA, Mounting Type: Through Hole, Maximum Drain Source Resistance: 6 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 2.08 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 5.33mm, Length: 5.2mm

GBP 0.18

1

onsemi N-Channel MOSFET, 380 mA, 500 V, 3-Pin TO-92 FQN1N50CTA

onsemi N-Channel MOSFET, 380 mA, 500 V, 3-Pin TO-92 FQN1N50CTA, Mounting Type: Through Hole, Maximum Drain Source Resistance: 6 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 2.08 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 5.33mm, Length: 5.2mm

GBP 0.43

1

onsemi N-Channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 ON Semiconductor 2N7002KT1G

onsemi N-Channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 ON Semiconductor 2N7002KT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Maximum Power Dissipation: 420 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.01mm, Length: 3.04mm

GBP 0.07

1

onsemi N-Channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 ON Semiconductor 2N7002KT1G

onsemi N-Channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 ON Semiconductor 2N7002KT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Maximum Power Dissipation: 420 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.01mm, Length: 3.04mm

GBP 0.07

1

onsemi BC848CPDW1T1G Dual NPN + PNP Transistor, 200 mA, 30 V, 6-Pin SOT-363

onsemi BC848CPDW1T1G Dual NPN + PNP Transistor, 200 mA, 30 V, 6-Pin SOT-363, Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Dimensions: 2.2 x 1.35 x 1mm

GBP 0.09

1

onsemi BC848CPDW1T1G Dual NPN + PNP Transistor, 200 mA, 30 V, 6-Pin SOT-363

onsemi BC848CPDW1T1G Dual NPN + PNP Transistor, 200 mA, 30 V, 6-Pin SOT-363, Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Dimensions: 2.2 x 1.35 x 1mm

GBP 0.03

1

onsemi BC856BDW1T1G Dual PNP Transistor, 200 mA, -65 V, 6-Pin SOT-363

onsemi BC856BDW1T1G Dual PNP Transistor, 200 mA, -65 V, 6-Pin SOT-363, Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Maximum Collector Base Voltage: -80 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 100 MHz, Dimensions: 2.2 x 1.35 x 1mm

GBP 0.06

1

onsemi BC856BDW1T1G Dual PNP Transistor, 200 mA, -65 V, 6-Pin SOT-363

onsemi BC856BDW1T1G Dual PNP Transistor, 200 mA, -65 V, 6-Pin SOT-363, Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Maximum Collector Base Voltage: -80 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 100 MHz, Dimensions: 2.2 x 1.35 x 1mm

GBP 0.03

1

onsemi BC847BPDW1T2G Dual NPN + PNP Transistor, 200 mA, 45 V, 6-Pin SOT-363

onsemi BC847BPDW1T2G Dual NPN + PNP Transistor, 200 mA, 45 V, 6-Pin SOT-363, Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Maximum Collector Base Voltage: 50 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Dimensions: 2.2 x 1.35 x 1mm

GBP 0.03

1

onsemi CPH3205-TL-E NPN Transistor, 3 A, 100 V, 3-Pin CPH

onsemi CPH3205-TL-E NPN Transistor, 3 A, 100 V, 3-Pin CPH, Mounting Type: Surface Mount, Maximum Power Dissipation: 900 mW, Minimum DC Current Gain: 200, Transistor Configuration: Single, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 380 MHz, Dimensions: 2.9 x 1.6 x 0.9mm

GBP 0.45

1

onsemi SBC846BPDW1T1G Dual NPN + PNP Digital Transistor, 65 V, 6-Pin SOT-363

onsemi SBC846BPDW1T1G Dual NPN + PNP Digital Transistor, 65 V, 6-Pin SOT-363, Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Maximum Emitter Base Voltage: 6 V, Number of Elements per Chip: 2, Dimensions: 2.2 x 1.35 x 0.9mm, Minimum Operating Temperature: -55 °C, Automotive Standard: AEC-Q101

GBP 0.25

1

onsemi ON Semi BC847BPDW1T2G Dual NPN + PNP Transistor, 200 mA, 45 V, 6-Pin SOT-363

onsemi ON Semi BC847BPDW1T2G Dual NPN + PNP Transistor, 200 mA, 45 V, 6-Pin SOT-363, Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Maximum Collector Base Voltage: 50 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Dimensions: 2.2 x 1.35 x 1mm

GBP 0.03

1

onsemi SBC857BDW1T1G Dual NPN + PNP Digital Transistor, 30 V, 6-Pin SOT-363

onsemi SBC857BDW1T1G Dual NPN + PNP Digital Transistor, 30 V, 6-Pin SOT-363, Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Maximum Emitter Base Voltage: 6 V, Number of Elements per Chip: 2, Dimensions: 2.2 x 1.35 x 0.9mm, Minimum Operating Temperature: -55 °C, Automotive Standard: AEC-Q101

GBP 0.03

1

onsemi SBC857BDW1T1G Dual NPN + PNP Digital Transistor, 30 V, 6-Pin SOT-363

onsemi SBC857BDW1T1G Dual NPN + PNP Digital Transistor, 30 V, 6-Pin SOT-363, Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Maximum Emitter Base Voltage: 6 V, Number of Elements per Chip: 2, Dimensions: 2.2 x 1.35 x 0.9mm, Minimum Operating Temperature: -55 °C, Automotive Standard: AEC-Q101

GBP 0.14

1

onsemi SBC846BPDW1T1G Dual NPN + PNP Digital Transistor, 65 V, 6-Pin SOT-363

onsemi SBC846BPDW1T1G Dual NPN + PNP Digital Transistor, 65 V, 6-Pin SOT-363, Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Maximum Emitter Base Voltage: 6 V, Number of Elements per Chip: 2, Dimensions: 2.2 x 1.35 x 0.9mm, Minimum Operating Temperature: -55 °C, Automotive Standard: AEC-Q101

GBP 0.06

1

onsemi SBC847BPDW1T1G Dual NPN + PNP Digital Transistor, 45 V, 6-Pin SOT-363

onsemi SBC847BPDW1T1G Dual NPN + PNP Digital Transistor, 45 V, 6-Pin SOT-363, Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Maximum Emitter Base Voltage: 6 V, Number of Elements per Chip: 2, Dimensions: 2.2 x 1.35 x 0.9mm, Minimum Operating Temperature: -55 °C, Automotive Standard: AEC-Q101

GBP 0.06

1

onsemi SBC847BPDW1T1G Dual NPN + PNP Digital Transistor, 45 V, 6-Pin SOT-363

onsemi SBC847BPDW1T1G Dual NPN + PNP Digital Transistor, 45 V, 6-Pin SOT-363, Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Maximum Emitter Base Voltage: 6 V, Number of Elements per Chip: 2, Dimensions: 2.2 x 1.35 x 0.9mm, Minimum Operating Temperature: -55 °C, Automotive Standard: AEC-Q101

GBP 0.28

1

onsemi N-Channel MOSFET, 10.2 A, 600 V, 3-Pin TO-220F FCPF380N60E

onsemi N-Channel MOSFET, 10.2 A, 600 V, 3-Pin TO-220F FCPF380N60E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.19mm, Length: 10.36mm

GBP 0.65

1

onsemi N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-220F FDPF16N50

onsemi N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-220F FDPF16N50, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 38.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.87mm, Length: 10.16mm

GBP 1.61

1

onsemi N-Channel MOSFET, 10.2 A, 600 V, 3-Pin TO-220F FCPF380N60E

onsemi N-Channel MOSFET, 10.2 A, 600 V, 3-Pin TO-220F FCPF380N60E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.19mm, Length: 10.36mm

GBP 0.64

1

onsemi N-Channel MOSFET, 18.5 A, 600 V, 3-Pin TO-3PN FQA19N60

onsemi N-Channel MOSFET, 18.5 A, 600 V, 3-Pin TO-3PN FQA19N60, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 18.9mm, Length: 15.8mm

GBP 3.85

1

onsemi N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-220F FDPF16N50

onsemi N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-220F FDPF16N50, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 38.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.87mm, Length: 10.16mm

GBP 1.61

1

onsemi N-Channel MOSFET, 18.5 A, 600 V, 3-Pin TO-3PN FQA19N60

onsemi N-Channel MOSFET, 18.5 A, 600 V, 3-Pin TO-3PN FQA19N60, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 18.9mm, Length: 15.8mm

GBP 3.43

1

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onsemi N-Channel MOSFET, 380 mA, 500 V, 3-Pin TO-92 FQN1N50CTA

onsemi N-Channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 2N7002KT1G

onsemi N-Channel MOSFET, 380 mA, 500 V, 3-Pin TO-92 FQN1N50CTA

onsemi N-Channel MOSFET, 380 mA, 500 V, 3-Pin TO-92 FQN1N50CTA

onsemi N-Channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 ON Semiconductor 2N7002KT1G

onsemi N-Channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 ON Semiconductor 2N7002KT1G

onsemi BC848CPDW1T1G Dual NPN + PNP Transistor, 200 mA, 30 V, 6-Pin SOT-363

onsemi BC848CPDW1T1G Dual NPN + PNP Transistor, 200 mA, 30 V, 6-Pin SOT-363

onsemi BC856BDW1T1G Dual PNP Transistor, 200 mA, -65 V, 6-Pin SOT-363

onsemi BC856BDW1T1G Dual PNP Transistor, 200 mA, -65 V, 6-Pin SOT-363

onsemi BC847BPDW1T2G Dual NPN + PNP Transistor, 200 mA, 45 V, 6-Pin SOT-363

onsemi CPH3205-TL-E NPN Transistor, 3 A, 100 V, 3-Pin CPH

onsemi SBC846BPDW1T1G Dual NPN + PNP Digital Transistor, 65 V, 6-Pin SOT-363

onsemi ON Semi BC847BPDW1T2G Dual NPN + PNP Transistor, 200 mA, 45 V, 6-Pin SOT-363

onsemi SBC857BDW1T1G Dual NPN + PNP Digital Transistor, 30 V, 6-Pin SOT-363

onsemi SBC857BDW1T1G Dual NPN + PNP Digital Transistor, 30 V, 6-Pin SOT-363

onsemi SBC846BPDW1T1G Dual NPN + PNP Digital Transistor, 65 V, 6-Pin SOT-363

onsemi SBC847BPDW1T1G Dual NPN + PNP Digital Transistor, 45 V, 6-Pin SOT-363

onsemi SBC847BPDW1T1G Dual NPN + PNP Digital Transistor, 45 V, 6-Pin SOT-363

onsemi N-Channel MOSFET, 10.2 A, 600 V, 3-Pin TO-220F FCPF380N60E

onsemi N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-220F FDPF16N50

onsemi N-Channel MOSFET, 10.2 A, 600 V, 3-Pin TO-220F FCPF380N60E

onsemi N-Channel MOSFET, 18.5 A, 600 V, 3-Pin TO-3PN FQA19N60

onsemi N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-220F FDPF16N50

onsemi N-Channel MOSFET, 18.5 A, 600 V, 3-Pin TO-3PN FQA19N60

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