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Vishay Siliconix 200 (Bidirectional) mA, 350 (Unidirectional) mA SPST Solid State Relay, DC, Surface Mount, MOSFET, 200

Vishay Siliconix 200 (Bidirectional) mA, 350 (Unidirectional) mA SPST Solid State Relay, DC, Surface Mount, MOSFET, 200, Maximum Load Voltage: 200 V, Minimum Control Voltage: 1.15 V, Maximum Control Voltage: 1.45 V, Terminal Type: PCB Pin, Package Style: SMD, Maximum Turn On Time: 2 ms, Dimensions: 8.71 x 6.5 x 3.81mm, Capacitance: 0.72pF, Control Voltage Range: 1.15 → 1.45 V, Depth: 6.5mm, MPN: LH1510AAB

GBP 1.19

1

Vishay Siliconix 45V 40A, Schottky Diode, 3-Pin D2PAK VBT4045BP-E3/4W

Vishay Siliconix 45V 40A, Schottky Diode, 3-Pin D2PAK VBT4045BP-E3/4W, Mounting Type: Surface Mount, Package Type: TO-263AB, Diode Configuration: Single, Maximum Forward Voltage Drop: 670mV, Number of Elements per Chip: 1, Peak Non-Repetitive Forward Surge Current: 240A

GBP 0.54

1

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V

GBP 0.21

1

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V

GBP 0.20

1

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V

GBP 0.25

1

Vishay Siliconix P-Channel MOSFET Transistor, 2.9 A, 60 V, 6-Pin TSOP SI3459BDV-T1-GE3

Vishay Siliconix P-Channel MOSFET Transistor, 2.9 A, 60 V, 6-Pin TSOP SI3459BDV-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 288 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.3 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1mm, Length: 3.1mm

GBP 0.20

1

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.84

1

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 62.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.36

1

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 136 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.56

1

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 65.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.44

1

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.55

1

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 62.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.77

1

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 65.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.79

1

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.99

1

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 136 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.59

1

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 136 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.58

1

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 65.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.92

1

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 62.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.36

1

Vishay Siliconix P-Channel MOSFET, 16 A, 80 V, 8-Pin SO-8 SQJ481EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 16 A, 80 V, 8-Pin SO-8 SQJ481EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.61

1

Vishay Siliconix P-Channel MOSFET, 10 A, 30 V, 6-Pin SC-70 SQA403EJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 10 A, 30 V, 6-Pin SC-70 SQA403EJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.13

1

Vishay Siliconix N-Channel MOSFET, 2.25 A, 30 V, 6-Pin SC-70 SQA470EEJ-T1_GE3

Vishay Siliconix N-Channel MOSFET, 2.25 A, 30 V, 6-Pin SC-70 SQA470EEJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.6V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Automotive Standard: AEC-Q101

GBP 0.05

1

Vishay Siliconix N-Channel MOSFET, 60 A, 60 V, 8-Pin SO-8 SiR188DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 60 A, 60 V, 8-Pin SO-8 SiR188DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 3.6V, Maximum Power Dissipation: 65.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.1V

GBP 0.52

1

Vishay Siliconix N-Channel MOSFET, 17.2 A, 200 V, 8-Pin SO-8 Si7172ADP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 17.2 A, 200 V, 8-Pin SO-8 Si7172ADP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.1V

GBP 0.14

1

Vishay Siliconix N-Channel MOSFET, 16 A, 60 V, 8-Pin 1212 SiS106DN-T1-GE3

Vishay Siliconix N-Channel MOSFET, 16 A, 60 V, 8-Pin 1212 SiS106DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 24 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.43

1

Vishay Siliconix N-Channel MOSFET, 75 A, 40 V, 8-Pin SO-8 SQJA76EP-T1_GE3

Vishay Siliconix N-Channel MOSFET, 75 A, 40 V, 8-Pin SO-8 SQJA76EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 66 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.50

1

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Vishay Siliconix 200 (Bidirectional) mA, 350 (Unidirectional) mA SPST Solid State Relay, DC, Surface Mount, MOSFET, 200

Vishay Siliconix 45V 40A, Schottky Diode, 3-Pin D2PAK VBT4045BP-E3/4W

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3

Vishay Siliconix P-Channel MOSFET Transistor, 2.9 A, 60 V, 6-Pin TSOP SI3459BDV-T1-GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix P-Channel MOSFET, 16 A, 80 V, 8-Pin SO-8 SQJ481EP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 10 A, 30 V, 6-Pin SC-70 SQA403EJ-T1_GE3

Vishay Siliconix N-Channel MOSFET, 2.25 A, 30 V, 6-Pin SC-70 SQA470EEJ-T1_GE3

Vishay Siliconix N-Channel MOSFET, 60 A, 60 V, 8-Pin SO-8 SiR188DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 17.2 A, 200 V, 8-Pin SO-8 Si7172ADP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 16 A, 60 V, 8-Pin 1212 SiS106DN-T1-GE3

Vishay Siliconix N-Channel MOSFET, 75 A, 40 V, 8-Pin SO-8 SQJA76EP-T1_GE3

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