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Vishay Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 SI7900AEDN-T1-GE3

Vishay Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 SI7900AEDN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.07mm, Length: 3.15mm

GBP 0.48

1

Vishay Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 SI7900AEDN-T1-GE3

Vishay Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 SI7900AEDN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.07mm, Length: 3.15mm

GBP 0.74

1

Vishay Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 SI7900AEDN-T1-GE3

Vishay Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 SI7900AEDN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.07mm, Length: 3.15mm

GBP 0.93

1

Vishay Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-SCD SiSF20DN-T1-GE3

Vishay Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-SCD SiSF20DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 69.4 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: ±20 V, Height: 0.75mm

GBP 1.07

1

Vishay Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-SCD SiSF20DN-T1-GE3

Vishay Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-SCD SiSF20DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 69.4 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: ±20 V, Height: 0.75mm

GBP 0.47

1

Vishay Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-SCD SiSF20DN-T1-GE3

Vishay Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-SCD SiSF20DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 69.4 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: ±20 V, Height: 0.75mm

GBP 0.46

1

Vishay Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-SCD SISF02DN-T1-GE3

Vishay Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-SCD SISF02DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 69.4 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: -12 V, +16 V, Height: 0.75mm

GBP 0.40

1

Vishay Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-SCD SISF02DN-T1-GE3

Vishay Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-SCD SISF02DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 69.4 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: -12 V, +16 V, Height: 0.75mm

GBP 0.40

1

Vishay Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-SCD SISF02DN-T1-GE3

Vishay Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-SCD SISF02DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 69.4 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: -12 V, +16 V, Height: 0.75mm

GBP 1.11

1

Vishay Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC SI4501BDY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC SI4501BDY-T1-GE3, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, 37 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 3.1 W, 4.5 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: -20 V, -8 V, +20 V, +8 V, Height: 1.55mm

GBP 0.25

1

Vishay Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC SI4501BDY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC SI4501BDY-T1-GE3, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, 37 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 3.1 W, 4.5 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: -20 V, -8 V, +20 V, +8 V, Height: 1.55mm

GBP 0.35

1

Vishay Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC SI4501BDY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC SI4501BDY-T1-GE3, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, 37 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 3.1 W, 4.5 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: -20 V, -8 V, +20 V, +8 V, Height: 1.55mm

GBP 0.46

1

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AE

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AE, Maximum Drain Source Resistance: 0.304 Ω, Maximum Gate Threshold Voltage: 2 → 4V

GBP 2.63

1

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-220AB SIHP15N80AE

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-220AB SIHP15N80AE, Maximum Drain Source Resistance: 0.304 Ω, Maximum Gate Threshold Voltage: 2 → 4V

GBP 2.60

1

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AE

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AE, Maximum Drain Source Resistance: 0.304 Ω, Maximum Gate Threshold Voltage: 2 → 4V

GBP 3.27

1

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-220AB SIHP15N80AE

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-220AB SIHP15N80AE, Maximum Drain Source Resistance: 0.304 Ω, Maximum Gate Threshold Voltage: 2 → 4V

GBP 2.09

1

Vishay N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-220 SiHA186N60EF-GE3

Vishay N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-220 SiHA186N60EF-GE3, Maximum Drain Source Resistance: 0.168 Ω, Maximum Gate Threshold Voltage: 3 → 5V

GBP 2.13

1

Vishay P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 SQ3493EV-T1_GE3

Vishay P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 SQ3493EV-T1_GE3, Maximum Drain Source Resistance: 0.016 Ω, Maximum Gate Threshold Voltage: 0.6 → 1.4V

GBP 0.44

1

Vishay N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-247AC SiHG186N60EF-GE3

Vishay N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-247AC SiHG186N60EF-GE3, Maximum Drain Source Resistance: 0.168 Ω, Maximum Gate Threshold Voltage: 3 → 5V

GBP 2.47

1

Vishay N-Channel MOSFET, 15 A, 800 V, 3-Pin TO-247AC SIHG17N80AE-GE3

Vishay N-Channel MOSFET, 15 A, 800 V, 3-Pin TO-247AC SIHG17N80AE-GE3, Maximum Drain Source Resistance: 0.25 Ω, Maximum Gate Threshold Voltage: 2 → 4V

GBP 2.21

1

Vishay N-Channel MOSFET, 8 A, 40 V, 3-Pin SOT-23 SQ2318BES-T1_GE3

Vishay N-Channel MOSFET, 8 A, 40 V, 3-Pin SOT-23 SQ2318BES-T1_GE3, Maximum Drain Source Resistance: 0.021 Ω, Maximum Gate Threshold Voltage: 1.5 → 2.5V

GBP 0.36

1

Vishay N-Channel MOSFET, 15 A, 800 V, 3-Pin TO-220AB SIHP17N80AE-GE3

Vishay N-Channel MOSFET, 15 A, 800 V, 3-Pin TO-220AB SIHP17N80AE-GE3, Maximum Drain Source Resistance: 0.25 Ω, Maximum Gate Threshold Voltage: 2 → 4V

GBP 1.99

1

Vishay N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-247AC SiHG186N60EF-GE3

Vishay N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-247AC SiHG186N60EF-GE3, Maximum Drain Source Resistance: 0.168 Ω, Maximum Gate Threshold Voltage: 3 → 5V

GBP 2.90

1

Vishay P-Channel MOSFET, 8 A, 30 V, 6-Pin TSOP-6 SQ3495EV-T1_GE3

Vishay P-Channel MOSFET, 8 A, 30 V, 6-Pin TSOP-6 SQ3495EV-T1_GE3, Maximum Drain Source Resistance: 0.017 Ω, Maximum Gate Threshold Voltage: 0.6 → 1.4V

GBP 0.44

1

Vishay N-Channel MOSFET, 15 A, 800 V, 3-Pin TO-247AC SIHG17N80AE-GE3

Vishay N-Channel MOSFET, 15 A, 800 V, 3-Pin TO-247AC SIHG17N80AE-GE3, Maximum Drain Source Resistance: 0.25 Ω, Maximum Gate Threshold Voltage: 2 → 4V

GBP 2.61

1

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Vishay Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 SI7900AEDN-T1-GE3

Vishay Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 SI7900AEDN-T1-GE3

Vishay Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 SI7900AEDN-T1-GE3

Vishay Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-SCD SiSF20DN-T1-GE3

Vishay Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-SCD SiSF20DN-T1-GE3

Vishay Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-SCD SiSF20DN-T1-GE3

Vishay Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-SCD SISF02DN-T1-GE3

Vishay Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-SCD SISF02DN-T1-GE3

Vishay Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-SCD SISF02DN-T1-GE3

Vishay Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC SI4501BDY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC SI4501BDY-T1-GE3

Vishay Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC SI4501BDY-T1-GE3

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AE

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-220AB SIHP15N80AE

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AE

Vishay N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-220AB SIHP15N80AE

Vishay N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-220 SiHA186N60EF-GE3

Vishay P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 SQ3493EV-T1_GE3

Vishay N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-247AC SiHG186N60EF-GE3

Vishay N-Channel MOSFET, 15 A, 800 V, 3-Pin TO-247AC SIHG17N80AE-GE3

Vishay N-Channel MOSFET, 8 A, 40 V, 3-Pin SOT-23 SQ2318BES-T1_GE3

Vishay N-Channel MOSFET, 15 A, 800 V, 3-Pin TO-220AB SIHP17N80AE-GE3

Vishay N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-247AC SiHG186N60EF-GE3

Vishay P-Channel MOSFET, 8 A, 30 V, 6-Pin TSOP-6 SQ3495EV-T1_GE3

Vishay N-Channel MOSFET, 15 A, 800 V, 3-Pin TO-247AC SIHG17N80AE-GE3

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