Vishay P-Channel MOSFET, 4.4 A, 8 V, 3-Pin SOT-23 SI2305CDS-T1-GE3
Vishay P-Channel MOSFET, 4.4 A, 8 V, 3-Pin SOT-23 SI2305CDS-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 35 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 960 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1.02mm, Length: 3.04mm