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Toshiba N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK TK7P60W,RVQ(S

Toshiba N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK TK7P60W,RVQ(S, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 2.3mm, Length: 6.6mm

GBP 0.59

1

Toshiba N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK TK7P60W,RVQ(S

Toshiba N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK TK7P60W,RVQ(S, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 2.3mm, Length: 6.6mm

GBP 0.70

1

Toshiba N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK TK7P60W,RVQ(S

Toshiba N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK TK7P60W,RVQ(S, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 2.3mm, Length: 6.6mm

GBP 0.91

1

Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS, Through Hole

Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 21mm, Maximum Operating Temperature: +150 °C

GBP 3.00

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 0.83

1

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 45 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.47

1

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 45 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 0.93

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 3.49

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.41

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.22

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 4.10

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.41

1

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

GBP 2.56

1

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

GBP 1.68

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.5mm, Width: 4.5mm, Height: 20mm, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 3.49

1

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 45 W, Switching Speed: 100kHz, Transistor Configuration: Single, Length: 10mm, Width: 4.5mm, Height: 15mm, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.40

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Length: 10mm, Width: 4.5mm, Height: 15mm, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.04

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.5mm, Width: 4.5mm, Height: 20mm, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.60

1

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.9mm, Width: 4.8mm, Height: 20mm, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

GBP 2.43

1

Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5

Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 109 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 240 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.7V

GBP 4.02

1

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin D2PAK TK16G60W

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin D2PAK TK16G60W, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.7V

GBP 0.97

1

Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5

Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 109 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 240 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.7V

GBP 3.64

1

Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5

Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 109 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 240 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.7V

GBP 3.27

1

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin D2PAK TK16G60W

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin D2PAK TK16G60W, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.7V

GBP 0.97

1

Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH, Through Hole

Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH, Through Hole, Maximum Gate Emitter Voltage: ±25V, Transistor Configuration: Single, Length: 20.5mm, Width: 5.2mm, Height: 26mm, Dimensions: 20.5 x 5.2 x 26mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.30

1

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Toshiba N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK TK7P60W,RVQ(S

Toshiba N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK TK7P60W,RVQ(S

Toshiba N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK TK7P60W,RVQ(S

Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin D2PAK TK16G60W

Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5

Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin D2PAK TK16G60W

Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH, Through Hole

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