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Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Minimum DC Current Gain: 35, Transistor Configuration: Single, Maximum Collector Base Voltage: -230 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 20.5 x 5.2 x 26mm

GBP 1.90

1

Toshiba TTA1943(Q) PNP Transistor, 15 A, 230 V, 3-Pin 2-21F1A

Toshiba TTA1943(Q) PNP Transistor, 15 A, 230 V, 3-Pin 2-21F1A, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -230 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 20.5 x 5.2 x 26mm, Maximum Collector Emitter Saturation Voltage: -3 V, Maximum Operating Temperature: +150 °C

GBP 2.33

1

Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -230 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 20.5 x 5.2 x 26mm, Maximum Collector Emitter Saturation Voltage: -3 V, Maximum Operating Temperature: +150 °C

GBP 1.89

1

Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -230 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 20.5 x 5.2 x 26mm, Maximum Collector Emitter Saturation Voltage: -3 V, Maximum Operating Temperature: +150 °C

GBP 2.56

1

Toshiba 2SA1943N(S1,E,S) PNP Transistor, 15 A, 230 V, 3-Pin TO-3P

Toshiba 2SA1943N(S1,E,S) PNP Transistor, 15 A, 230 V, 3-Pin TO-3P, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -230 V, Maximum Emitter Base Voltage: -5 V, Dimensions: 15.5 x 4.5 x 20mm, Maximum Collector Emitter Saturation Voltage: -3 V, Maximum Operating Temperature: +150 °C

GBP 1.99

1

Toshiba 2SC5242-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SC5242-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN, Mounting Type: Through Hole, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 19 x 15.9 x 4.8mm, Height: 19mm

GBP 2.40

1

Toshiba 2SA1962-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SA1962-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN, Mounting Type: Through Hole, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 19 x 15.9 x 4.8mm, Height: 19mm

GBP 2.70

1

Toshiba TTC5200(Q) NPN Transistor, 15 A, 230 V, 3-Pin 2-21F1A

Toshiba TTC5200(Q) NPN Transistor, 15 A, 230 V, 3-Pin 2-21F1A, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 20.5 x 5.2 x 26mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +150 °C

GBP 2.39

1

Toshiba 2SC5358-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SC5358-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 19 x 15.9 x 4.8mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +150 °C

GBP 1.38

1

Toshiba 2SA1986-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SA1986-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 19 x 15.9 x 4.8mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +150 °C

GBP 1.41

1

Toshiba 2SA1987-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba 2SA1987-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL, Mounting Type: Through Hole, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 26 x 20.5 x 5.2mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +150 °C

GBP 2.98

1

Toshiba 2SC5200N(S1,E,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3P

Toshiba 2SC5200N(S1,E,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3P, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Dimensions: 15.5 x 4.5 x 20mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +150 °C

GBP 1.79

1

Toshiba 2SC5200-O(S1,F,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba 2SC5200-O(S1,F,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PL, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Dimensions: 20.5 x 26 x 5.2mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +150 °C

GBP 2.37

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.41

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 3.49

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.41

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 4.10

1

Toshiba GT50MR21,Q(O IGBT, 50 A 900 V, 3-Pin TO-3P, Through Hole

Toshiba GT50MR21,Q(O IGBT, 50 A 900 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 0.4µs, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Gate Capacitance: 1500pF, Maximum Operating Temperature: +175 °C

GBP 2.80

1

Toshiba, 10 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L10F(F)

Toshiba, 10 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L10F(F), Line Regulation: 230 mV, Load Regulation: 90 mV, Mounting Type: Surface Mount, Polarity: Positive, Quiescent Current: 3.2mA, Output Type: Fixed, Power Rating: 0.5W, Dimensions: 4.6 x 2.5 x 1.6mm, Length: 4.6mm

GBP 0.31

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.5mm, Width: 4.5mm, Height: 20mm, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 3.49

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.5mm, Width: 4.5mm, Height: 20mm, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.60

1

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 0.4µs, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Energy Rating: 0.29mJ, Gate Capacitance: 1500pF, Maximum Operating Temperature: 175 °C

GBP 3.40

1

Toshiba N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S

Toshiba N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 88 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.1mm, Length: 10.16mm

GBP 3.34

1

Toshiba N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN TK31J60W5,S1VQ(O

Toshiba N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN TK31J60W5,S1VQ(O, Mounting Type: Through Hole, Maximum Drain Source Resistance: 99 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20mm, Length: 15.5mm

GBP 2.45

1

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 230 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15mm, Length: 10mm

GBP 1.72

1

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Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba TTA1943(Q) PNP Transistor, 15 A, 230 V, 3-Pin 2-21F1A

Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba 2SA1943N(S1,E,S) PNP Transistor, 15 A, 230 V, 3-Pin TO-3P

Toshiba 2SC5242-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SA1962-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba TTC5200(Q) NPN Transistor, 15 A, 230 V, 3-Pin 2-21F1A

Toshiba 2SC5358-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SA1986-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SA1987-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba 2SC5200N(S1,E,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3P

Toshiba 2SC5200-O(S1,F,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50MR21,Q(O IGBT, 50 A 900 V, 3-Pin TO-3P, Through Hole

Toshiba, 10 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L10F(F)

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

Toshiba N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 TK31E60W,S1VX(S

Toshiba N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN TK31J60W5,S1VQ(O

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M

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