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Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 9.89

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 10.27

1

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 9.08

1

Toshiba N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 TK62N60W,S1VF(S

Toshiba N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 TK62N60W,S1VF(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 10.96

1

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 10.04

1

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 9.76

1

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 10.04

1

Toshiba N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-3PN TK62J60W,S1VQ(O

Toshiba N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-3PN TK62J60W,S1VQ(O, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20mm, Length: 15.5mm

GBP 10.26

1

Toshiba N-Channel MOSFET, 61.8 A, 600 V, 3-Pin TO-247 TK62N60W5,S1VF(S

Toshiba N-Channel MOSFET, 61.8 A, 600 V, 3-Pin TO-247 TK62N60W5,S1VF(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 400 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 20.95mm

GBP 9.11

1

Toshiba N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-3PN TK40J60U(F)

Toshiba N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-3PN TK40J60U(F), Mounting Type: Through Hole, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 320 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20mm, Length: 15.5mm

GBP 10.46

1

Toshiba, TLP3547(F(O DC Input MOSFET Output Photocoupler, Through Hole, 8-Pin DIP

Toshiba DC Input MOSFET Output Photocoupler, Through Hole, 8-Pin DIP, Maximum Forward Voltage: 1.8V, Maximum Input Current: 30 mA, Isolation Voltage: 2500 Vrms, Series: TLP3547, MPN: TLP3547(F(O

GBP 10.86

1

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Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 TK62N60W,S1VF(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-3PN TK62J60W,S1VQ(O

Toshiba N-Channel MOSFET, 61.8 A, 600 V, 3-Pin TO-247 TK62N60W5,S1VF(S

Toshiba N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-3PN TK40J60U(F)

Toshiba, TLP3547(F(O DC Input MOSFET Output Photocoupler, Through Hole, 8-Pin DIP

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