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Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S5VX(J

Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S5VX(J, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 15mm

GBP 1.06

Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 30 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 15mm

GBP 0.96

Toshiba N-Channel MOSFET, 9.7 A, 500 V, 3-Pin TO-220SIS TK10A50W,S5X(M

Toshiba N-Channel MOSFET, 9.7 A, 500 V, 3-Pin TO-220SIS TK10A50W,S5X(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 30 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 15mm

GBP 0.65

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Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S5VX(J

Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

Toshiba N-Channel MOSFET, 9.7 A, 500 V, 3-Pin TO-220SIS TK10A50W,S5X(M

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