Taiwan Semiconductor N-Channel MOSFET, 13 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB260CI C0G
Taiwan Semiconductor N-Channel MOSFET, 13 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB260CI C0G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 260 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 32.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V