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STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.32

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 6.10

1

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 6.27

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 7.17

1

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.51

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.44

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.22

1

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 3.84

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5mm, Height: 20.1mm, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C

GBP 4.70

1

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5mm, Height: 20.1mm, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C

GBP 4.05

1

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.33

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 6.40

1

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 38.2 x 25.5 x 9.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 22.50

1

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 38.2 x 25.5 x 9.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 20.76

1

STMicroelectronics STN0214 NPN Bipolar Transistor, 200 mA, 1400 V, 3-Pin SOT-223

STMicroelectronics STN0214 NPN Bipolar Transistor, 200 mA, 1400 V, 3-Pin SOT-223, Mounting Type: Surface Mount, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 6 V, Dimensions: 6.5 x 3.5 x 1.8mm

GBP 0.33

1

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 38.2mm, Width: 25.5mm, Height: 9.1mm, Dimensions: 38.2 x 25.5 x 9.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 18.66

1

STMicroelectronics, STM32WB 200 V Harmonic Filter

STMicroelectronics, STM32WB 200 V Harmonic Filter, MPN: MLPF-WB-01E3

GBP 0.32

1

STMicroelectronics STN0214 NPN Transistor, 200 mA, 1400 V, 3 + Tab-Pin SOT-223

STMicroelectronics STN0214 NPN Transistor, 200 mA, 1400 V, 3 + Tab-Pin SOT-223, Mounting Type: Surface Mount, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 6 V, Dimensions: 6.5 x 3.5 x 1.8mm, Length: 6.5mm, Maximum Base Emitter Saturation Voltage: 0.8 V

GBP 0.49

1

STMicroelectronics, STM32WB 200 V Harmonic Filter

STMicroelectronics, STM32WB 200 V Harmonic Filter, Package/Case: Bumpless CSP, MPN: MLPF-WB-01E3

GBP 0.36

1

STMicroelectronics, STM32WB 200 V Harmonic Filter

STMicroelectronics, STM32WB 200 V Harmonic Filter, Package/Case: Bumpless CSP, MPN: MLPF-WB-01E3

GBP 0.15

1

STMicroelectronics SMP50-200, Bi-Directional TVS Diode, 2-Pin DO-214AC

STMicroelectronics SMP50-200, Bi-Directional TVS Diode, 2-Pin DO-214AC, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AC (SMA), Maximum Reverse Stand-off Voltage: 200V, Maximum Peak Pulse Current: 50A, Maximum Operating Temperature: +150 °C, Dimensions: 4.6 x 2.9 x 2.45mm, Length: 4.6mm, Maximum Reverse Leakage Current: 5µA, Width: 2.9mm

GBP 0.15

1

STMicroelectronics SMP50-200, Bi-Directional TVS Diode, 2-Pin DO-214AC

STMicroelectronics SMP50-200, Bi-Directional TVS Diode, 2-Pin DO-214AC, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AC (SMA), Maximum Reverse Stand-off Voltage: 200V, Maximum Peak Pulse Current: 50A, Maximum Operating Temperature: +150 °C, Dimensions: 4.6 x 2.9 x 2.45mm, Length: 4.6mm, Maximum Reverse Leakage Current: 5µA, Width: 2.9mm

GBP 0.08

1

STMicroelectronics SMP50-200, Bi-Directional TVS Diode, 2-Pin DO-214AC

STMicroelectronics SMP50-200, Bi-Directional TVS Diode, 2-Pin DO-214AC, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AC (SMA), Maximum Reverse Stand-off Voltage: 200V, Maximum Peak Pulse Current: 50A, Maximum Operating Temperature: +150 °C, Dimensions: 4.6 x 2.9 x 2.45mm, Length: 4.6mm, Maximum Reverse Leakage Current: 5µA, Width: 2.9mm

GBP 0.08

1

STMicroelectronics VIPER50A-E, PWM Current Mode Controller, 1.5 A, 200 kHz, 0 → 15 V, 5-Pin PENTAWATT

STMicroelectronics VIPER50A-E, PWM Current Mode Controller, 1.5 A, 200 kHz, 0 → 15 V, 5-Pin PENTAWATT, Rise Time: 50ns, Fall Time: 100ns, Mounting Type: Through Hole, Dimensions: 10.4 x 4.8 x 9.2mm, Length: 10.4mm, Width: 4.8mm

GBP 2.33

1

STMicroelectronics SMP100LC-200, Bi-Directional TVS Diode, 2-Pin DO-214AA

STMicroelectronics SMP100LC-200, Bi-Directional TVS Diode, 2-Pin DO-214AA, Diode Configuration: Single, Minimum Breakdown Voltage: 200V, Mounting Type: Surface Mount, Package Type: DO-214AA (SMB), Maximum Reverse Stand-off Voltage: 180V, Maximum Peak Pulse Current: 100A, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +150 °C, Capacitance: 60pF, Dimensions: 4.6 x 3.95 x 2.45mm, Length: 4.6mm

GBP 0.17

1

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STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount

STMicroelectronics STN0214 NPN Bipolar Transistor, 200 mA, 1400 V, 3-Pin SOT-223

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount

STMicroelectronics, STM32WB 200 V Harmonic Filter

STMicroelectronics STN0214 NPN Transistor, 200 mA, 1400 V, 3 + Tab-Pin SOT-223

STMicroelectronics, STM32WB 200 V Harmonic Filter

STMicroelectronics, STM32WB 200 V Harmonic Filter

STMicroelectronics SMP50-200, Bi-Directional TVS Diode, 2-Pin DO-214AC

STMicroelectronics SMP50-200, Bi-Directional TVS Diode, 2-Pin DO-214AC

STMicroelectronics SMP50-200, Bi-Directional TVS Diode, 2-Pin DO-214AC

STMicroelectronics VIPER50A-E, PWM Current Mode Controller, 1.5 A, 200 kHz, 0 → 15 V, 5-Pin PENTAWATT

STMicroelectronics SMP100LC-200, Bi-Directional TVS Diode, 2-Pin DO-214AA

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