STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7
STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7, Maximum Drain Source Resistance: 0.055 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.2V, Number of Elements per Chip: 1