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STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA, Thyristor Type: SCR, Package Type: RD91, Surge Current Rating: 610A, Mounting Type: Panel Mount, Maximum Gate Trigger Voltage: 1.3V, Maximum Holding Current: 150mA, Length: 40mm, Width: 27mm, Height: 14mm, Dimensions: 40 x 27 x 14mm, Maximum Operating Temperature: +125 °C

GBP 7.35

1

STMicroelectronics ULN2003TTR 5 NPN Darlington Transistor Array, 500 mA 1.6 V HFE:1000, 48-Pin QFN48

GBP 0.44

1

STMicroelectronics ULN2003TTR 5 NPN Darlington Transistor Array, 500 mA 1.6 V HFE:1000, 48-Pin QFN48

GBP 0.21

1

STMicroelectronics ULN2003TTR 5 NPN Darlington Transistor Array, 500 mA 1.6 V HFE:1000, 48-Pin QFN48

GBP 0.45

1

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA, Thyristor Type: SCR, Package Type: RD91, Surge Current Rating: 610A, Mounting Type: Panel Mount, Maximum Gate Trigger Voltage: 1.3V, Maximum Holding Current: 150mA, Dimensions: 40 x 27 x 14mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Repetitive Peak Off-State Current: 10µA

GBP 7.82

1

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA, Thyristor Type: SCR, Package Type: RD91, Surge Current Rating: 610A, Mounting Type: Panel Mount, Maximum Gate Trigger Voltage: 1.3V, Maximum Holding Current: 150mA, Dimensions: 40 x 27 x 14mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Repetitive Peak Off-State Current: 10µA

GBP 6.73

1

STMicroelectronics L5991D, PWM Controller, 20 V, 1000 kHz 16-Pin, SOIC

STMicroelectronics L5991D, PWM Controller, 20 V, 1000 kHz 16-Pin, SOIC, Output Current: 1.5 A, Fall Time: 35ns, Mounting Type: Surface Mount, Rise Time: 70ns, Topology: Boost, Flyback, Dimensions: 10 x 4 x 1.65mm, Length: 10mm, PWM Controller Type: Current Mode, Width: 4mm

GBP 2.42

1

STMicroelectronics L5991D, PWM Controller, 20 V, 1000 kHz 16-Pin, SOIC

STMicroelectronics L5991D, PWM Controller, 20 V, 1000 kHz 16-Pin, SOIC, Output Current: 1.5 A, Fall Time: 35ns, Mounting Type: Surface Mount, Rise Time: 70ns, Topology: Boost, Flyback, Dimensions: 10 x 4 x 1.65mm, Length: 10mm, PWM Controller Type: Current Mode, Width: 4mm

GBP 2.06

1

STMicroelectronics N-Channel MOSFET, 2.2 A, 1000 V, 3-Pin DPAK STD4NK100Z

STMicroelectronics N-Channel MOSFET, 2.2 A, 1000 V, 3-Pin DPAK STD4NK100Z, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.8 Ω, Channel Mode: Enhancement, Maximum Power Dissipation: 90 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.6V, Height: 2.4mm, Length: 6.6mm

GBP 1.86

1

STMicroelectronics N-Channel MOSFET, 2.2 A, 1000 V, 3-Pin DPAK STD4NK100Z

STMicroelectronics N-Channel MOSFET, 2.2 A, 1000 V, 3-Pin DPAK STD4NK100Z, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.8 Ω, Channel Mode: Enhancement, Maximum Power Dissipation: 90 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.6V, Height: 2.4mm, Length: 6.6mm

GBP 0.88

1

STMicroelectronics N-Channel MOSFET, 2.2 A, 1000 V, 3-Pin DPAK STD4NK100Z

STMicroelectronics N-Channel MOSFET, 2.2 A, 1000 V, 3-Pin DPAK STD4NK100Z, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.8 Ω, Channel Mode: Enhancement, Maximum Power Dissipation: 90 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.6V, Height: 2.4mm, Length: 6.6mm

GBP 1.59

1

STMicroelectronics ULN2803A Octal NPN Darlington Pair, 500 mA 50 V HFE:1000, 18-Pin PDIP

STMicroelectronics ULN2803A Octal NPN Darlington Pair, 500 mA 50 V HFE:1000, 18-Pin PDIP, Mounting Type: Through Hole, Transistor Configuration: Common Emitter, Maximum Collector Emitter Saturation Voltage: 1.1 V, Dimensions: 23.24 x 7.1 x 3.93mm, Length: 23.24mm, Maximum Operating Temperature: +85 °C

GBP 1.26

1

STMicroelectronics ULN2804A Octal NPN Darlington Pair, 0.5 A 50 V HFE:1000, 18-Pin PDIP

STMicroelectronics ULN2804A Octal NPN Darlington Pair, 0.5 A 50 V HFE:1000, 18-Pin PDIP, Mounting Type: Through Hole, Transistor Configuration: Common Emitter, Maximum Collector Emitter Saturation Voltage: 1.6 V, Dimensions: 23.24 x 7.1 x 3.93mm, Length: 23.24mm, Maximum Operating Temperature: +85 °C

GBP 2.25

1

STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin IPAK STU2NK100Z

STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin IPAK STU2NK100Z, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 8.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 6.9mm

GBP 2.72

1

STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin IPAK STU2NK100Z

STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin IPAK STU2NK100Z, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 8.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 6.9mm

GBP 2.31

1

STMicroelectronics N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220FP STF5NK100Z

STMicroelectronics N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220FP STF5NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.3mm

GBP 2.72

1

STMicroelectronics N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-247 STW5NK100Z

STMicroelectronics N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-247 STW5NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 3.02

1

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.38 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 4.57

1

STMicroelectronics N-Channel MOSFET, 6.5 A, 1000 V, 3-Pin TO-220FP STF8NK100Z

STMicroelectronics N-Channel MOSFET, 6.5 A, 1000 V, 3-Pin TO-220FP STF8NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.85 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.4mm

GBP 3.60

1

STMicroelectronics N-Channel MOSFET, 6.5 A, 1000 V, 3-Pin TO-220 STP8NK100Z

STMicroelectronics N-Channel MOSFET, 6.5 A, 1000 V, 3-Pin TO-220 STP8NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.85 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm

GBP 3.24

1

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.38 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 4.58

1

STMicroelectronics N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220 STP5NK100Z

STMicroelectronics N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220 STP5NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm

GBP 2.54

1

STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin TO-220 STP2NK100Z

STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin TO-220 STP2NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.75mm

GBP 2.63

1

STMicroelectronics N-Channel MOSFET, 2.5 A, 1000 V, 3-Pin TO-220FP STF3NK100Z

STMicroelectronics N-Channel MOSFET, 2.5 A, 1000 V, 3-Pin TO-220FP STF3NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 6 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.4mm

GBP 2.40

1

STMicroelectronics N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220FP STF5NK100Z

STMicroelectronics N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220FP STF5NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.3mm

GBP 2.73

1

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STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA

STMicroelectronics ULN2003TTR 5 NPN Darlington Transistor Array, 500 mA 1.6 V HFE:1000, 48-Pin QFN48

STMicroelectronics ULN2003TTR 5 NPN Darlington Transistor Array, 500 mA 1.6 V HFE:1000, 48-Pin QFN48

STMicroelectronics ULN2003TTR 5 NPN Darlington Transistor Array, 500 mA 1.6 V HFE:1000, 48-Pin QFN48

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA

STMicroelectronics L5991D, PWM Controller, 20 V, 1000 kHz 16-Pin, SOIC

STMicroelectronics L5991D, PWM Controller, 20 V, 1000 kHz 16-Pin, SOIC

STMicroelectronics N-Channel MOSFET, 2.2 A, 1000 V, 3-Pin DPAK STD4NK100Z

STMicroelectronics N-Channel MOSFET, 2.2 A, 1000 V, 3-Pin DPAK STD4NK100Z

STMicroelectronics N-Channel MOSFET, 2.2 A, 1000 V, 3-Pin DPAK STD4NK100Z

STMicroelectronics ULN2803A Octal NPN Darlington Pair, 500 mA 50 V HFE:1000, 18-Pin PDIP

STMicroelectronics ULN2804A Octal NPN Darlington Pair, 0.5 A 50 V HFE:1000, 18-Pin PDIP

STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin IPAK STU2NK100Z

STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin IPAK STU2NK100Z

STMicroelectronics N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220FP STF5NK100Z

STMicroelectronics N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-247 STW5NK100Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 6.5 A, 1000 V, 3-Pin TO-220FP STF8NK100Z

STMicroelectronics N-Channel MOSFET, 6.5 A, 1000 V, 3-Pin TO-220 STP8NK100Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220 STP5NK100Z

STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin TO-220 STP2NK100Z

STMicroelectronics N-Channel MOSFET, 2.5 A, 1000 V, 3-Pin TO-220FP STF3NK100Z

STMicroelectronics N-Channel MOSFET, 3.5 A, 1000 V, 3-Pin TO-220FP STF5NK100Z

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