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STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 24.45mm, Dimensions: 15.75 x 5.15 x 24.45mm, Energy Rating: 1435µJ, Gate Capacitance: 2170pF

GBP 5.37

1

STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.20

1

STMicroelectronics STGW30NC60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30NC60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 200 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.40

1

STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C

GBP 4.39

1

STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 24.45mm, Energy Rating: 1435mJ, Gate Capacitance: 2170pF, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.32

1

STMicroelectronics N-Channel MOSFET, 51 A, 600 V, 3-Pin TO-247 STW55NM60ND

STMicroelectronics N-Channel MOSFET, 51 A, 600 V, 3-Pin TO-247 STW55NM60ND, Mounting Type: Through Hole, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 20.15mm

GBP 7.63

1

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 8.53

1

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 7.35

1

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 7.33

1

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STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30NC60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics N-Channel MOSFET, 51 A, 600 V, 3-Pin TO-247 STW55NM60ND

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2

STMicroelectronics N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2

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