mcb.dk | Få success online

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.32

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 6.10

1

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 6.27

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 7.17

1

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.51

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.44

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.22

1

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5mm, Height: 20.1mm, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C

GBP 4.70

1

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.33

1

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 469 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 6.40

1

STMicroelectronics N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STB160N75F3

STMicroelectronics N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STB160N75F3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 330 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.6mm

GBP 4.74

1

STMicroelectronics N-Channel MOSFET, 40 A, 200 V, 3-Pin D2PAK STB40NF20

STMicroelectronics N-Channel MOSFET, 40 A, 200 V, 3-Pin D2PAK STB40NF20, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.6mm

GBP 5.74

1

STMicroelectronics N-Channel MOSFET, 40 A, 200 V, 3-Pin D2PAK STB40NF20

STMicroelectronics N-Channel MOSFET, 40 A, 200 V, 3-Pin D2PAK STB40NF20, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.6mm

GBP 6.75

1

STMicroelectronics N-Channel MOSFET, 75 A, 200 V, 3-Pin TO-247 STW75NF20

STMicroelectronics N-Channel MOSFET, 75 A, 200 V, 3-Pin TO-247 STW75NF20, Mounting Type: Through Hole, Maximum Drain Source Resistance: 34 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 190 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.15mm

GBP 4.44

1

STMicroelectronics STGW30NC60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30NC60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 200 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 20.15mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.40

1

STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 24.45mm, Dimensions: 15.75 x 5.15 x 24.45mm, Energy Rating: 1435µJ, Gate Capacitance: 2170pF

GBP 5.37

1

STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Dimensions: 15.75 x 5.15 x 24.45mm, Energy Rating: 1435mJ, Gate Capacitance: 2170pF, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.32

1

STMicroelectronics X-Nucleo-NFC Evaluation Kit X-NUCLEO-NFC01A1

STMicroelectronics X-Nucleo-NFC Evaluation Kit X-NUCLEO-NFC01A1, Classification: Expansion Board

GBP 7.80

1

STMicroelectronics X-NUCLEO-IHM09M1 X-Nucleo-IHM Motor Controller for STM32 Nucleo Boards

STMicroelectronics X-NUCLEO-IHM09M1 X-Nucleo-IHM Motor Controller for STM32 Nucleo Boards, Kit Classification: Evaluation Board

GBP 7.96

1

STMicroelectronics X-NUCLEO-IHM03A1 X-Nucleo-IHM Stepper Motor Driver for STM32 Nucleo Boards

STMicroelectronics X-NUCLEO-IHM03A1 X-Nucleo-IHM Stepper Motor Driver for STM32 Nucleo Boards, Kit Classification: Evaluation Board

GBP 8.09

1

STMicroelectronics X-NUCLEO-IHM06A1 Motor Driver

GBP 8.17

1

STMicroelectronics X-NUCLEO-PLC01A1 PLC Driver for STM32 Nucleo

STMicroelectronics X-NUCLEO-PLC01A1 PLC Driver for STM32 Nucleo, Kit Classification: Evaluation Board

GBP 8.17

1

STMicroelectronics VNQ860SP-E Multiplexer Quad:4 x 4 5.5 to 36 V, 10-Pin PowerSO

STMicroelectronics VNQ860SP-E Multiplexer Quad:4 x 4 5.5 to 36 V, 10-Pin PowerSO, Mounting Type: Surface Mount, Dimensions: 9.5 x 7.6 x 3.65mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Input Signal Type: Single Ended, Length: 9.5mm, Maximum Power Dissipation: 90 W

GBP 4.88

1

STMicroelectronics X-NUCLEO-IHM12A1 Motor Configuration for STSPIN240 for STM32 Nucleo

STMicroelectronics X-NUCLEO-IHM12A1 Motor Configuration for STSPIN240 for STM32 Nucleo, Kit Classification: Evaluation Board

GBP 8.17

1

STMicroelectronics X-NUCLEO-IHM11M1 Motor Configuration for STSPIN230 for STM32 Nucleo

STMicroelectronics X-NUCLEO-IHM11M1 Motor Configuration for STSPIN230 for STM32 Nucleo, Kit Classification: Evaluation Board

GBP 8.17

1

DIGITAL MARKETING

Brand

Gender

Merchant

Price (EUR)

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STB160N75F3

STMicroelectronics N-Channel MOSFET, 40 A, 200 V, 3-Pin D2PAK STB40NF20

STMicroelectronics N-Channel MOSFET, 40 A, 200 V, 3-Pin D2PAK STB40NF20

STMicroelectronics N-Channel MOSFET, 75 A, 200 V, 3-Pin TO-247 STW75NF20

STMicroelectronics STGW30NC60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

STMicroelectronics X-Nucleo-NFC Evaluation Kit X-NUCLEO-NFC01A1

STMicroelectronics X-NUCLEO-IHM09M1 X-Nucleo-IHM Motor Controller for STM32 Nucleo Boards

STMicroelectronics X-NUCLEO-IHM03A1 X-Nucleo-IHM Stepper Motor Driver for STM32 Nucleo Boards

STMicroelectronics X-NUCLEO-IHM06A1 Motor Driver

STMicroelectronics X-NUCLEO-PLC01A1 PLC Driver for STM32 Nucleo

STMicroelectronics VNQ860SP-E Multiplexer Quad:4 x 4 5.5 to 36 V, 10-Pin PowerSO

STMicroelectronics X-NUCLEO-IHM12A1 Motor Configuration for STSPIN240 for STM32 Nucleo

STMicroelectronics X-NUCLEO-IHM11M1 Motor Configuration for STSPIN230 for STM32 Nucleo

Powered by Cobiro