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STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220, Maximum Emitter Base Voltage: 20 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Collector Base Voltage: 2000 V, Maximum Collector Cut-off Current: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm

GBP 8.07

1

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220, Maximum Emitter Base Voltage: 20 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Collector Base Voltage: 2000 V, Maximum Collector Cut-off Current: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm

GBP 6.79

1

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220, Maximum Emitter Base Voltage: 20 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Collector Base Voltage: 2000 V, Maximum Collector Cut-off Current: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm

GBP 6.97

1

STMicroelectronics MOSFET, 36 A, 1200 V, 3-Pin HiP247 SCTW40N120G2V

STMicroelectronics MOSFET, 36 A, 1200 V, 3-Pin HiP247 SCTW40N120G2V, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.7 O, Maximum Gate Threshold Voltage: 4.9V

GBP 8.77

1

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCTWA10N120

GBP 8.64

1

STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120

GBP 8.58

1

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H

GBP 6.41

1

STMicroelectronics VNH5050A-E, MOSFET, 30000 mA, 41V 36-Pin, PowerSSO-36

GBP 5.41

1

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247™ SCT10N120

GBP 7.20

1

STMicroelectronics VNH5050A-E, MOSFET, 30000 mA, 41V 36-Pin, PowerSSO-36

STMicroelectronics VNH5050A-E, MOSFET, 30000 mA, 41V 36-Pin, PowerSSO-36, Logic Type: CMOS

GBP 5.76

1

STMicroelectronics VN5T016AHTR-E, MOSFET, 60000 mA, 8 to 36V 7-Pin, HPAK

STMicroelectronics VN5T016AHTR-E, MOSFET, 60000 mA, 8 to 36V 7-Pin, HPAK, Logic Type: CMOS

GBP 4.46

1

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.105 O, Maximum Gate Threshold Voltage: 5V

GBP 8.21

1

STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120

STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120, Maximum Drain Source Resistance: 0.189 Ω, Maximum Gate Threshold Voltage: 3.5V

GBP 8.29

1

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247™ SCT10N120, Maximum Drain Source Resistance: 0.58 Ω, Maximum Gate Threshold Voltage: 3.5V

GBP 7.18

1

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247™ SCT10N120, Maximum Drain Source Resistance: 0.58 Ω, Maximum Gate Threshold Voltage: 3.5V

GBP 8.35

1

STMicroelectronics SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

STMicroelectronics SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H, Maximum Drain Source Resistance: 0.203 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 239V, Series: SiC MOSFET

GBP 8.36

1

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCTWA10N120

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCTWA10N120, Maximum Drain Source Resistance: 0.55 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V

GBP 6.04

1

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H, Maximum Drain Source Resistance: 0.52 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V

GBP 4.60

1

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H, Maximum Drain Source Resistance: 0.52 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V

GBP 7.44

1

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 468 W, Transistor Configuration: Single, Length: 15.9mm, Width: 5.1mm, Height: 21.1mm, Dimensions: 15.9 x 5.1 x 21.1mm, Energy Rating: 8.5mJ, Gate Capacitance: 2475pF

GBP 4.46

1

STMicroelectronics STGW25S120DF3 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW25S120DF3 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 20.15mm, Dimensions: 15.75 x 5.15 x 20.15mm, Energy Rating: 4.88mJ, Gate Capacitance: 1600pF

GBP 5.27

1

STMicroelectronics STGAP1AS, MOSFET 1, 20 mA, 36V 24-Pin, SOIC

STMicroelectronics STGAP1AS, MOSFET 1, 20 mA, 36V 24-Pin, SOIC, Fall Time: 25ns, High and Low Sides Dependency: Dependent, Time Delay: 130ns, Bridge Type: Half Bridge, Polarity: Inverting, Non-Inverting, 2 Input NAND, Automotive Standard: AEC-Q100, Mounting Type: Surface Mount, Height: 2.35mm

GBP 6.54

1

STMicroelectronics STGAP1AS, MOSFET 1, 20 mA, 36V 24-Pin, SOIC

STMicroelectronics STGAP1AS, MOSFET 1, 20 mA, 36V 24-Pin, SOIC, Fall Time: 25ns, High and Low Sides Dependency: Dependent, Time Delay: 130ns, Bridge Type: Half Bridge, Polarity: Inverting, Non-Inverting, 2 Input NAND, Automotive Standard: AEC-Q100, Mounting Type: Surface Mount, Height: 2.35mm

GBP 5.64

1

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 468 W, Transistor Configuration: Single, Dimensions: 15.9 x 5.1 x 21.1mm, Energy Rating: 8.5mJ, Gate Capacitance: 2475pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.68

1

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 468 W, Transistor Configuration: Single, Dimensions: 15.9 x 5.1 x 21.1mm, Energy Rating: 8.5mJ, Gate Capacitance: 2475pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.42

1

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STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220

STMicroelectronics MOSFET, 36 A, 1200 V, 3-Pin HiP247 SCTW40N120G2V

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCTWA10N120

STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H

STMicroelectronics VNH5050A-E, MOSFET, 30000 mA, 41V 36-Pin, PowerSSO-36

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120

STMicroelectronics VNH5050A-E, MOSFET, 30000 mA, 41V 36-Pin, PowerSSO-36

STMicroelectronics VN5T016AHTR-E, MOSFET, 60000 mA, 8 to 36V 7-Pin, HPAK

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics SiC N-Channel MOSFET Module, 20 A, 1200 V Depletion, 3-Pin HiP247 SCTWA20N120

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120

STMicroelectronics SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120

STMicroelectronics SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCTWA10N120

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H

STMicroelectronics SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGW25S120DF3 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGAP1AS, MOSFET 1, 20 mA, 36V 24-Pin, SOIC

STMicroelectronics STGAP1AS, MOSFET 1, 20 mA, 36V 24-Pin, SOIC

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

STMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

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