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STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 38.2 x 25.5 x 9.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 22.50

1

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 38.2 x 25.5 x 9.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 20.76

1

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 38.2mm, Width: 25.5mm, Height: 9.1mm, Dimensions: 38.2 x 25.5 x 9.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 18.66

1

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7

GBP 25.03

1

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7, Maximum Drain Source Resistance: 0.065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.1V

GBP 19.23

1

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7, Maximum Drain Source Resistance: 0.065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.1V

GBP 28.41

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

GBP 24.75

1

STMicroelectronics Dual Switching Diode, Isolated, 90A 1200V, 4-Pin ISOTOP STTH9012TV1

STMicroelectronics Dual Switching Diode, Isolated, 90A 1200V, 4-Pin ISOTOP STTH9012TV1, Mounting Type: Surface Mount, Maximum Forward Voltage Drop: 1.9V, Maximum Operating Temperature: +150 °C, Length: 38.2mm, Width: 25.5mm, Height: 12.2mm, Dimensions: 38.2 x 25.5 x 12.2mm

GBP 19.32

1

STMicroelectronics Dual Switching Diode, Isolated, 90A 1200V, 4-Pin ISOTOP STTH9012TV1

STMicroelectronics Dual Switching Diode, Isolated, 90A 1200V, 4-Pin ISOTOP STTH9012TV1, Mounting Type: Surface Mount, Maximum Forward Voltage Drop: 1.9V, Maximum Operating Temperature: +150 °C, Length: 38.2mm, Width: 25.5mm, Height: 12.2mm, Dimensions: 38.2 x 25.5 x 12.2mm

GBP 17.82

1

STMicroelectronics Dual Switching Diode, Isolated, 45A 1200V, 4-Pin ISOTOP STTH9012TV2

STMicroelectronics Dual Switching Diode, Isolated, 45A 1200V, 4-Pin ISOTOP STTH9012TV2, Mounting Type: Panel Mount, Maximum Forward Voltage Drop: 1.9V, Maximum Diode Capacitance: 45pF, Maximum Operating Temperature: +150 °C, Length: 38.2mm, Width: 24.8mm, Height: 12.2mm, Dimensions: 38.2 x 24.8 x 12.2mm

GBP 18.43

1

STMicroelectronics Dual Switching Diode, Isolated, 90A 1200V, 4-Pin ISOTOP STTH9012TV1

STMicroelectronics Dual Switching Diode, Isolated, 90A 1200V, 4-Pin ISOTOP STTH9012TV1, Mounting Type: Surface Mount, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.9V, Maximum Operating Temperature: +150 °C, Length: 38.2mm, Width: 25.5mm, Height: 12.2mm, Dimensions: 38.2 x 25.5 x 12.2mm

GBP 17.82

1

STMicroelectronics Dual Switching Diode, Isolated, 45A 1200V, 4-Pin ISOTOP STTH9012TV2

STMicroelectronics Dual Switching Diode, Isolated, 45A 1200V, 4-Pin ISOTOP STTH9012TV2, Mounting Type: Panel Mount, Maximum Forward Voltage Drop: 1.9V, Maximum Diode Capacitance: 45pF, Maximum Operating Temperature: +150 °C, Length: 38.2mm, Width: 24.8mm, Height: 12.2mm, Dimensions: 38.2 x 24.8 x 12.2mm

GBP 19.99

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.024 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 25.26

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.024 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 22.02

1

STMicroelectronics BUT30V NPN Transistor, 100 A, 125 V, 4-Pin ISOTOP

STMicroelectronics BUT30V NPN Transistor, 100 A, 125 V, 4-Pin ISOTOP, Mounting Type: Panel Mount, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 200 V, Maximum Emitter Base Voltage: 7 V, Dimensions: 9.1 x 38.2 x 25.5mm, Height: 9.1mm, Length: 38.2mm

GBP 41.29

1

STMicroelectronics Dual Switching Diode, Isolated, 45A 1200V, 4-Pin ISOTOP STTH9012TV2

STMicroelectronics Dual Switching Diode, Isolated, 45A 1200V, 4-Pin ISOTOP STTH9012TV2, Mounting Type: Panel Mount, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.9V, Maximum Diode Capacitance: 45pF, Maximum Operating Temperature: +150 °C, Length: 38.2mm, Width: 24.8mm, Height: 12.2mm, Dimensions: 38.2 x 24.8 x 12.2mm

GBP 18.45

1

STMicroelectronics BUT30V NPN Transistor, 100 A, 125 V, 4-Pin ISOTOP

STMicroelectronics BUT30V NPN Transistor, 100 A, 125 V, 4-Pin ISOTOP, Mounting Type: Panel Mount, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 200 V, Maximum Emitter Base Voltage: 7 V, Dimensions: 9.1 x 38.2 x 25.5mm, Maximum Base Emitter Saturation Voltage: 1.9 V, Maximum Collector Emitter Saturation Voltage: 1.5 V, Maximum Operating Temperature: +150 °C

GBP 36.41

1

STMicroelectronics X-NUCLEO-S2915A1 Expansion Board Evaluation Kit X-NUCLEO-S2915A1

GBP 36.44

1

STMicroelectronics X-NUCLEO-S2868A2 Expansion Board Evaluation Kit X-NUCLEO-S2868A2

GBP 24.15

1

STMicroelectronics X-NUCLEO-IKA01A1, X-Nucleo Operational Amplifier Expansion Board for TSZ124

GBP 18.44

1

STMicroelectronics X-Nucleo Expansion Board for VL6180X

STMicroelectronics X-Nucleo Expansion Board for VL6180X, MPN: X-NUCLEO-6180XA1

GBP 24.98

1

STMicroelectronics X-NUCLEO-IHM08M1

STMicroelectronics X-NUCLEO-IHM08M1, Kit Classification: Evaluation Board

GBP 33.69

1

STMicroelectronics 45V 80A, Schottky Diode, 4-Pin ISOTOP STPS16045TV

STMicroelectronics 45V 80A, Schottky Diode, 4-Pin ISOTOP STPS16045TV, Mounting Type: Panel Mount, Diode Configuration: Isolated, Maximum Forward Voltage Drop: 950mV, Peak Non-Repetitive Forward Surge Current: 900A

GBP 17.79

1

STMicroelectronics 170V 200A, Schottky Diode, 4-Pin ISOTOP STPS200170TV1

STMicroelectronics 170V 200A, Schottky Diode, 4-Pin ISOTOP STPS200170TV1, Mounting Type: Panel Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 850mV, Peak Non-Repetitive Forward Surge Current: 700A

GBP 18.82

1

STMicroelectronics 170V 200A, Schottky Diode, 4-Pin ISOTOP STPS200170TV1

STMicroelectronics 170V 200A, Schottky Diode, 4-Pin ISOTOP STPS200170TV1, Mounting Type: Panel Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 850mV, Peak Non-Repetitive Forward Surge Current: 700A

GBP 20.41

1

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STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount

STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics Dual Switching Diode, Isolated, 90A 1200V, 4-Pin ISOTOP STTH9012TV1

STMicroelectronics Dual Switching Diode, Isolated, 90A 1200V, 4-Pin ISOTOP STTH9012TV1

STMicroelectronics Dual Switching Diode, Isolated, 45A 1200V, 4-Pin ISOTOP STTH9012TV2

STMicroelectronics Dual Switching Diode, Isolated, 90A 1200V, 4-Pin ISOTOP STTH9012TV1

STMicroelectronics Dual Switching Diode, Isolated, 45A 1200V, 4-Pin ISOTOP STTH9012TV2

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics BUT30V NPN Transistor, 100 A, 125 V, 4-Pin ISOTOP

STMicroelectronics Dual Switching Diode, Isolated, 45A 1200V, 4-Pin ISOTOP STTH9012TV2

STMicroelectronics BUT30V NPN Transistor, 100 A, 125 V, 4-Pin ISOTOP

STMicroelectronics X-NUCLEO-S2915A1 Expansion Board Evaluation Kit X-NUCLEO-S2915A1

STMicroelectronics X-NUCLEO-S2868A2 Expansion Board Evaluation Kit X-NUCLEO-S2868A2

STMicroelectronics X-NUCLEO-IKA01A1, X-Nucleo Operational Amplifier Expansion Board for TSZ124

STMicroelectronics X-Nucleo Expansion Board for VL6180X

STMicroelectronics X-NUCLEO-IHM08M1

STMicroelectronics 45V 80A, Schottky Diode, 4-Pin ISOTOP STPS16045TV

STMicroelectronics 170V 200A, Schottky Diode, 4-Pin ISOTOP STPS200170TV1

STMicroelectronics 170V 200A, Schottky Diode, 4-Pin ISOTOP STPS200170TV1

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