STMicroelectronics SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H
STMicroelectronics SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H, Maximum Drain Source Resistance: 0.203 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 239V, Series: SiC MOSFET