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STMicroelectronics N-Channel MOSFET, 4 A, 3-Pin DPAK STD5N80K5

STMicroelectronics N-Channel MOSFET, 4 A, 3-Pin DPAK STD5N80K5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.73 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.5V, Height: 2.17mm

GBP 0.98

1

STMicroelectronics N-Channel MOSFET, 4 A, 3-Pin DPAK STD5N80K5

STMicroelectronics N-Channel MOSFET, 4 A, 3-Pin DPAK STD5N80K5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.73 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.5V, Height: 2.17mm

GBP 1.30

1

STMicroelectronics N-Channel MOSFET, 4 A, 3-Pin DPAK STD5N80K5

STMicroelectronics N-Channel MOSFET, 4 A, 3-Pin DPAK STD5N80K5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.73 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.5V, Height: 2.17mm

GBP 0.64

1

STMicroelectronics Dual N-Channel MOSFET, 4 A, 60 V, 8-Pin SOIC STS4DNF60L

STMicroelectronics Dual N-Channel MOSFET, 4 A, 60 V, 8-Pin SOIC STS4DNF60L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -15 V, +15 V, Height: 1.25mm

GBP 1.55

1

STMicroelectronics Dual N-Channel MOSFET, 4 A, 60 V, 8-Pin SOIC STS4DNF60L

STMicroelectronics Dual N-Channel MOSFET, 4 A, 60 V, 8-Pin SOIC STS4DNF60L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -15 V, +15 V, Height: 1.25mm

GBP 1.74

1

STMicroelectronics Dual N-Channel MOSFET, 4 A, 60 V, 8-Pin SOIC STS4DNF60L

STMicroelectronics Dual N-Channel MOSFET, 4 A, 60 V, 8-Pin SOIC STS4DNF60L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -15 V, +15 V, Height: 1.25mm

GBP 0.83

1

STMicroelectronics Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STEF512GR

GBP 1.13

1

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin D2PAK STB4NK60ZT4

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin D2PAK STB4NK60ZT4, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 4.6mm

GBP 1.67

1

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin D2PAK STB4NK60ZT4

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin D2PAK STB4NK60ZT4, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 4.6mm

GBP 0.72

1

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin D2PAK STB4NK60ZT4

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin D2PAK STB4NK60ZT4, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 4.6mm

GBP 1.50

1

STMicroelectronics N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 STN3NF06L

STMicroelectronics N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 STN3NF06L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.8V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 1.8mm

GBP 0.65

1

STMicroelectronics N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 STN3NF06L

STMicroelectronics N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 STN3NF06L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.8V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 1.8mm

GBP 0.29

1

STMicroelectronics N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 STN3NF06L

STMicroelectronics N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 STN3NF06L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.8V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 1.8mm

GBP 0.74

1

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FP STP4NK60ZFP

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FP STP4NK60ZFP, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 9.3mm

GBP 1.65

1

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FP STP4NK60ZFP

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FP STP4NK60ZFP, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 9.3mm

GBP 1.41

1

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220 STP4NK60Z

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220 STP4NK60Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 9.15mm

GBP 1.28

1

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220 STP4NK60Z

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220 STP4NK60Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 9.15mm

GBP 1.51

1

STMicroelectronics Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STEF512GR

STMicroelectronics Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STEF512GR, Maximum Drain Source Resistance: 0.04 Ω, Maximum Gate Threshold Voltage: 15V, Series: E-Fuse

GBP 1.34

1

STMicroelectronics Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STEF512GR

STMicroelectronics Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STEF512GR, Maximum Drain Source Resistance: 0.04 Ω, Maximum Gate Threshold Voltage: 15V, Series: E-Fuse

GBP 0.73

1

STMicroelectronics, L6986ITR Step-Down Switching Regulator, 1-Channel 2A 16-Pin, HTSSOP16

STMicroelectronics Step-Down Switching Regulator, 1-Channel 2A 16-Pin, HTSSOP16, Maximum Output Voltage: 38 V, Regulator Function: Buck Regulator, Minimum Input Voltage: 4 V, MPN: L6986ITR

GBP 1.15

1

STMicroelectronics, A6986ITR Step-Down Switching Regulator, 1-Channel 2A 16-Pin, HTSSOP16

STMicroelectronics Step-Down Switching Regulator, 1-Channel 2A 16-Pin, HTSSOP16, Maximum Output Voltage: 38 V, Regulator Function: Buck Regulator, Minimum Input Voltage: 4 V, MPN: A6986ITR

GBP 2.05

1

STMicroelectronics Dual N-Channel MOSFET, 3.5 A, 40 V, 8-Pin SOIC VNS1NV04DP-E

STMicroelectronics Dual N-Channel MOSFET, 3.5 A, 40 V, 8-Pin SOIC VNS1NV04DP-E, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 4 W, Transistor Configuration: Isolated, Forward Diode Voltage: 0.8V, Height: 1.5mm

GBP 1.21

1

STMicroelectronics Dual N-Channel MOSFET, 3.5 A, 40 V, 8-Pin SOIC VNS1NV04DP-E

STMicroelectronics Dual N-Channel MOSFET, 3.5 A, 40 V, 8-Pin SOIC VNS1NV04DP-E, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 4 W, Transistor Configuration: Isolated, Forward Diode Voltage: 0.8V, Height: 1.5mm

GBP 1.13

1

STMicroelectronics Dual N-Channel MOSFET, 3.5 A, 40 V, 8-Pin SOIC VNS1NV04DP-E

STMicroelectronics Dual N-Channel MOSFET, 3.5 A, 40 V, 8-Pin SOIC VNS1NV04DP-E, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 4 W, Transistor Configuration: Isolated, Forward Diode Voltage: 0.8V, Height: 1.5mm

GBP 0.95

1

STMicroelectronics, L5973ADStep-Down Switching Regulator, 1-Channel Adjustable 8-Pin, HSOP

STMicroelectronicsStep-Down Switching Regulator, 1-Channel Adjustable 8-Pin, HSOP, Maximum Output Voltage: 35 V, Regulator Function: Buck Controller, Minimum Output Voltage: 1.235 V, Minimum Input Voltage: 4 V, Maximum Input Voltage: 36 V, Mounting Type: Surface Mount, Switching Regulator: Yes, Line Regulation: 10 mV, Load Regulation: 15 mV, Dimensions: 5 x 4 x 1.25mm, MPN: L5973AD

GBP 1.62

1

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STMicroelectronics N-Channel MOSFET, 4 A, 3-Pin DPAK STD5N80K5

STMicroelectronics N-Channel MOSFET, 4 A, 3-Pin DPAK STD5N80K5

STMicroelectronics N-Channel MOSFET, 4 A, 3-Pin DPAK STD5N80K5

STMicroelectronics Dual N-Channel MOSFET, 4 A, 60 V, 8-Pin SOIC STS4DNF60L

STMicroelectronics Dual N-Channel MOSFET, 4 A, 60 V, 8-Pin SOIC STS4DNF60L

STMicroelectronics Dual N-Channel MOSFET, 4 A, 60 V, 8-Pin SOIC STS4DNF60L

STMicroelectronics Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STEF512GR

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin D2PAK STB4NK60ZT4

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin D2PAK STB4NK60ZT4

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin D2PAK STB4NK60ZT4

STMicroelectronics N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 STN3NF06L

STMicroelectronics N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 STN3NF06L

STMicroelectronics N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 STN3NF06L

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FP STP4NK60ZFP

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FP STP4NK60ZFP

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220 STP4NK60Z

STMicroelectronics N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220 STP4NK60Z

STMicroelectronics Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STEF512GR

STMicroelectronics Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STEF512GR

STMicroelectronics, L6986ITR Step-Down Switching Regulator, 1-Channel 2A 16-Pin, HTSSOP16

STMicroelectronics, A6986ITR Step-Down Switching Regulator, 1-Channel 2A 16-Pin, HTSSOP16

STMicroelectronics Dual N-Channel MOSFET, 3.5 A, 40 V, 8-Pin SOIC VNS1NV04DP-E

STMicroelectronics Dual N-Channel MOSFET, 3.5 A, 40 V, 8-Pin SOIC VNS1NV04DP-E

STMicroelectronics Dual N-Channel MOSFET, 3.5 A, 40 V, 8-Pin SOIC VNS1NV04DP-E

STMicroelectronics, L5973ADStep-Down Switching Regulator, 1-Channel Adjustable 8-Pin, HSOP

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