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STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount

STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: 16V, Maximum Power Dissipation: 125 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 6.6 x 6.2 x 2.4mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 1.43

1

STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount

STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: 16V, Maximum Power Dissipation: 125 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 6.6mm, Width: 6.2mm, Height: 2.4mm, Dimensions: 6.6 x 6.2 x 2.4mm, Maximum Operating Temperature: +175 °C

GBP 1.22

1

STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount

STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: 16V, Maximum Power Dissipation: 125 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 6.6 x 6.2 x 2.4mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 0.70

1

STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: 16V, Maximum Power Dissipation: 150 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 1.12

1

STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: 16V, Maximum Power Dissipation: 150 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 10.4mm, Width: 9.35mm, Height: 4.6mm, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +175 °C

GBP 2.29

1

STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: 16V, Maximum Power Dissipation: 150 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 2.29

1

STMicroelectronics 1200V 10A, Schottky Diode, 2 + Tab-Pin D2PAK STPSC10H12GY-TR

STMicroelectronics 1200V 10A, Schottky Diode, 2 + Tab-Pin D2PAK STPSC10H12GY-TR, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 2.25V, Diode Technology: SiC Schottky, Peak Non-Repetitive Forward Surge Current: 71 A, 420 A

GBP 2.65

1

STMicroelectronics 1200V 10A, Schottky Diode, 2 + Tab-Pin D2PAK STPSC10H12GY-TR

STMicroelectronics 1200V 10A, Schottky Diode, 2 + Tab-Pin D2PAK STPSC10H12GY-TR, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 2.25V, Diode Technology: SiC Schottky, Peak Non-Repetitive Forward Surge Current: 71 A, 420 A

GBP 5.02

1

STMicroelectronics 1200V 10A, Schottky Diode, 2 + Tab-Pin D2PAK STPSC10H12GY-TR

STMicroelectronics 1200V 10A, Schottky Diode, 2 + Tab-Pin D2PAK STPSC10H12GY-TR, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 2.25V, Diode Technology: SiC Schottky, Peak Non-Repetitive Forward Surge Current: 71 A, 420 A

GBP 4.72

1

STMicroelectronics N-Channel MOSFET, 10 A, 3-Pin DPAK STD11N60DM2

STMicroelectronics N-Channel MOSFET, 10 A, 3-Pin DPAK STD11N60DM2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 420 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Forward Diode Voltage: 1.6V, Height: 2.17mm

GBP 0.64

1

STMicroelectronics N-Channel MOSFET, 10 A, 3-Pin DPAK STD11N60DM2

STMicroelectronics N-Channel MOSFET, 10 A, 3-Pin DPAK STD11N60DM2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 420 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Forward Diode Voltage: 1.6V, Height: 2.17mm

GBP 1.25

1

STMicroelectronics N-Channel MOSFET, 10 A, 3-Pin DPAK STD11N60DM2

STMicroelectronics N-Channel MOSFET, 10 A, 3-Pin DPAK STD11N60DM2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 420 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Forward Diode Voltage: 1.6V, Height: 2.17mm

GBP 1.50

1

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STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount

STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount

STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount

STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics 1200V 10A, Schottky Diode, 2 + Tab-Pin D2PAK STPSC10H12GY-TR

STMicroelectronics 1200V 10A, Schottky Diode, 2 + Tab-Pin D2PAK STPSC10H12GY-TR

STMicroelectronics 1200V 10A, Schottky Diode, 2 + Tab-Pin D2PAK STPSC10H12GY-TR

STMicroelectronics N-Channel MOSFET, 10 A, 3-Pin DPAK STD11N60DM2

STMicroelectronics N-Channel MOSFET, 10 A, 3-Pin DPAK STD11N60DM2

STMicroelectronics N-Channel MOSFET, 10 A, 3-Pin DPAK STD11N60DM2

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