ROHM N-Channel MOSFET, 30 A, 30 V, 8-Pin HSMT RQ3E180AJTB
ROHM N-Channel MOSFET, 30 A, 30 V, 8-Pin HSMT RQ3E180AJTB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Forward Diode Voltage: 1.2V