Nexperia Dual N-Channel MOSFET, 3.4 A, 30 V, 8-Pin SOIC
Nexperia Dual N-Channel MOSFET, 3.4 A, 30 V, 8-Pin SOIC, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.8V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.45mm, MPN: PHN210T,118