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Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 880 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -1V, Minimum Gate Threshold Voltage: -0.4V, Maximum Power Dissipation: 8330 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.27

1

Nexperia 3 P-Channel MOSFET, -2.9 A, -20 V, 4-Pin DFN1010D-3, SOT1215 PMXB75UPEZ

Nexperia 3 P-Channel MOSFET, -2.9 A, -20 V, 4-Pin DFN1010D-3, SOT1215 PMXB75UPEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 950 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -1V, Minimum Gate Threshold Voltage: -0.4V, Maximum Power Dissipation: 8330 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.10

1

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 121 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.9V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.11

1

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 121 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.9V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.25

1

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.9V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.18

1

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.9V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.15

1

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.9V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.25

1

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 880 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -1V, Minimum Gate Threshold Voltage: -0.4V, Maximum Power Dissipation: 8330 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.06

1

Nexperia 3 P-Channel MOSFET, -2.4 A, -30 V, 4-Pin DFN1010D-3, SOT1215 PMXB120EPEZ

Nexperia 3 P-Channel MOSFET, -2.4 A, -30 V, 4-Pin DFN1010D-3, SOT1215 PMXB120EPEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 187 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -2.5V, Minimum Gate Threshold Voltage: -1V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Height: 0.36mm

GBP 0.13

1

Nexperia 3 P-Channel MOSFET, -2.9 A, -20 V, 4-Pin DFN1010D-3, SOT1215 PMXB75UPEZ

Nexperia 3 P-Channel MOSFET, -2.9 A, -20 V, 4-Pin DFN1010D-3, SOT1215 PMXB75UPEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 950 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -1V, Minimum Gate Threshold Voltage: -0.4V, Maximum Power Dissipation: 8330 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.07

1

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 121 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.9V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.08

1

Nexperia 3 P-Channel MOSFET, -2.4 A, -30 V, 4-Pin DFN1010D-3, SOT1215 PMXB120EPEZ

Nexperia 3 P-Channel MOSFET, -2.4 A, -30 V, 4-Pin DFN1010D-3, SOT1215 PMXB120EPEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 187 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -2.5V, Minimum Gate Threshold Voltage: -1V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Height: 0.36mm

GBP 0.24

1

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 880 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -1V, Minimum Gate Threshold Voltage: -0.4V, Maximum Power Dissipation: 8330 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.17

1

Nexperia 3 P-Channel MOSFET, -2.4 A, -30 V, 4-Pin DFN1010D-3, SOT1215 PMXB120EPEZ

Nexperia 3 P-Channel MOSFET, -2.4 A, -30 V, 4-Pin DFN1010D-3, SOT1215 PMXB120EPEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 187 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -2.5V, Minimum Gate Threshold Voltage: -1V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Height: 0.36mm

GBP 0.09

1

Nexperia 3 P-Channel MOSFET, -2.9 A, -20 V, 4-Pin DFN1010D-3, SOT1215 PMXB75UPEZ

Nexperia 3 P-Channel MOSFET, -2.9 A, -20 V, 4-Pin DFN1010D-3, SOT1215 PMXB75UPEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 950 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -1V, Minimum Gate Threshold Voltage: -0.4V, Maximum Power Dissipation: 8330 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.22

1

Nexperia 3 N-Channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215 PMXB360ENEAZ

Nexperia 3 N-Channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215 PMXB360ENEAZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 887 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.7V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 6250 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Automotive Standard: AEC-Q101

GBP 0.07

1

Nexperia 3 N-Channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215 PMXB360ENEAZ

Nexperia 3 N-Channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215 PMXB360ENEAZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 887 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.7V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 6250 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Automotive Standard: AEC-Q101

GBP 0.07

1

Nexperia 3 N-Channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215 PMXB360ENEAZ

Nexperia 3 N-Channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215 PMXB360ENEAZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 887 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.7V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 6250 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Automotive Standard: AEC-Q101

GBP 0.07

1

Nexperia, 5.3V Zener Diode 4% 250 mW SMT 3-Pin SOT-23

Nexperia, 5.3V Zener Diode 4% 250 mW SMT 3-Pin SOT-23, Diode Configuration: Single, Mounting Type: Surface Mount, Number of Elements per Chip: 1, Zener Type: Avalanche, Test Current: 0.25mA, Maximum Reverse Leakage Current: 5µA, Length: 3mm, Width: 1.4mm, Dimensions: 3 x 1.4 x 1mm, MPN: PLVA653A,215

GBP 0.16

1

Nexperia, 5.3V Zener Diode 4% 250 mW SMT 3-Pin SOT-23

Nexperia, 5.3V Zener Diode 4% 250 mW SMT 3-Pin SOT-23, Diode Configuration: Single, Mounting Type: Surface Mount, Number of Elements per Chip: 1, Zener Type: Avalanche, Test Current: 0.25mA, Maximum Reverse Leakage Current: 5µA, Dimensions: 3 x 1.4 x 1mm, Maximum Operating Temperature: +150 °C, Typical Voltage Temperature Coefficient: 1.6mV/K, MPN: PLVA653A,215

GBP 0.21

1

Nexperia, 5V Zener Diode 4% 250 mW SMT 3-Pin SOT-23

Nexperia, 5V Zener Diode 4% 250 mW SMT 3-Pin SOT-23, Diode Configuration: Single, Mounting Type: Surface Mount, Number of Elements per Chip: 1, Package Type: SOT-23 (TO-236AB), Zener Type: Avalanche, Test Current: 0.25mA, Maximum Zener Impedance: 700Ω, Maximum Reverse Leakage Current: 20µA, Length: 3mm, Width: 1.4mm, Dimensions: 3 x 1.4 x 1mm, MPN: PLVA650A,215

GBP 0.23

1

Nexperia, 5.3V Zener Diode 4% 250 mW SMT 3-Pin SOT-23

Nexperia, 5.3V Zener Diode 4% 250 mW SMT 3-Pin SOT-23, Diode Configuration: Single, Mounting Type: Surface Mount, Number of Elements per Chip: 1, Zener Type: Avalanche, Test Current: 0.25mA, Maximum Reverse Leakage Current: 5µA, Dimensions: 3 x 1.4 x 1mm, Maximum Operating Temperature: +150 °C, Typical Voltage Temperature Coefficient: 1.6mV/K, MPN: PLVA653A,215

GBP 0.08

1

Nexperia, 5V Zener Diode 4% 250 mW SMT 3-Pin SOT-23

Nexperia, 5V Zener Diode 4% 250 mW SMT 3-Pin SOT-23, Diode Configuration: Single, Mounting Type: Surface Mount, Number of Elements per Chip: 1, Package Type: SOT-23 (TO-236AB), Zener Type: Avalanche, Test Current: 0.25mA, Maximum Zener Impedance: 700Ω, Maximum Reverse Leakage Current: 20µA, Dimensions: 3 x 1.4 x 1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -65 °C, MPN: PLVA650A,215

GBP 0.24

1

Nexperia, 5V Zener Diode 4% 250 mW SMT 3-Pin SOT-23

Nexperia, 5V Zener Diode 4% 250 mW SMT 3-Pin SOT-23, Diode Configuration: Single, Mounting Type: Surface Mount, Number of Elements per Chip: 1, Package Type: SOT-23 (TO-236AB), Zener Type: Avalanche, Test Current: 0.25mA, Maximum Zener Impedance: 700Ω, Maximum Reverse Leakage Current: 20µA, Dimensions: 3 x 1.4 x 1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -65 °C, MPN: PLVA650A,215

GBP 0.08

1

Nexperia PBSS4350X,115 NPN Transistor, 3 A, 50 V, 4-Pin UPAK

Nexperia PBSS4350X,115 NPN Transistor, 3 A, 50 V, 4-Pin UPAK, Mounting Type: Surface Mount, Maximum Power Dissipation: 1.6 W, Minimum DC Current Gain: 100, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 100 MHz, Dimensions: 1.6 x 4.6 x 2.6mm, Height: 1.6mm

GBP 0.23

1

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Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ

Nexperia 3 P-Channel MOSFET, -2.9 A, -20 V, 4-Pin DFN1010D-3, SOT1215 PMXB75UPEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ

Nexperia 3 P-Channel MOSFET, -2.4 A, -30 V, 4-Pin DFN1010D-3, SOT1215 PMXB120EPEZ

Nexperia 3 P-Channel MOSFET, -2.9 A, -20 V, 4-Pin DFN1010D-3, SOT1215 PMXB75UPEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ

Nexperia 3 P-Channel MOSFET, -2.4 A, -30 V, 4-Pin DFN1010D-3, SOT1215 PMXB120EPEZ

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ

Nexperia 3 P-Channel MOSFET, -2.4 A, -30 V, 4-Pin DFN1010D-3, SOT1215 PMXB120EPEZ

Nexperia 3 P-Channel MOSFET, -2.9 A, -20 V, 4-Pin DFN1010D-3, SOT1215 PMXB75UPEZ

Nexperia 3 N-Channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215 PMXB360ENEAZ

Nexperia 3 N-Channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215 PMXB360ENEAZ

Nexperia 3 N-Channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215 PMXB360ENEAZ

Nexperia, 5.3V Zener Diode 4% 250 mW SMT 3-Pin SOT-23

Nexperia, 5.3V Zener Diode 4% 250 mW SMT 3-Pin SOT-23

Nexperia, 5V Zener Diode 4% 250 mW SMT 3-Pin SOT-23

Nexperia, 5.3V Zener Diode 4% 250 mW SMT 3-Pin SOT-23

Nexperia, 5V Zener Diode 4% 250 mW SMT 3-Pin SOT-23

Nexperia, 5V Zener Diode 4% 250 mW SMT 3-Pin SOT-23

Nexperia PBSS4350X,115 NPN Transistor, 3 A, 50 V, 4-Pin UPAK

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