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Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK IRLR9343TRPBF

GBP 0.70

1

Infineon Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON

Infineon Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON, MPN: IPG20N06S2L65AATMA1

GBP 0.33

1

Infineon N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L35ATMA1

Infineon N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L35ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 44 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 65 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm

GBP 0.42

1

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin IPAK IRLU9343PBF

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin IPAK IRLU9343PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 105 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 79 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 6.22mm

GBP 1.01

1

Infineon N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L35ATMA1

Infineon N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L35ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 44 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 65 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm

GBP 0.42

1

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin IPAK IRLU9343PBF

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin IPAK IRLU9343PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 105 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 79 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 6.22mm

GBP 0.86

1

Infineon N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L35ATMA1

Infineon N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L35ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 44 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 65 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm

GBP 0.42

1

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin IPAK IRLU9343PBF

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin IPAK IRLU9343PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 105 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 79 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 6.22mm

GBP 1.01

1

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK IRLR9343TRPBF

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK IRLR9343TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.17 Ω, Series: HEXFET

GBP 0.35

1

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK IRLR9343TRPBF

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK IRLR9343TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.17 Ω, Series: HEXFET

GBP 0.77

1

Infineon Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON

Infineon Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Series: OptiMOS, MPN: IPG20N06S2L65AATMA1

GBP 0.36

1

Infineon Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON

Infineon Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Series: OptiMOS, MPN: IPG20N06S2L65AATMA1

GBP 0.31

1

Infineon IKW30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin PG-TO247-3

Infineon IKW30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 188 W

GBP 1.28

1

Infineon IKW30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin PG-TO247-3

Infineon IKW30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 188 W

GBP 2.20

1

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK IRF4905STRLPBF

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK IRF4905STRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm

GBP 1.81

1

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK IRF4905STRLPBF

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK IRF4905STRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm

GBP 1.24

1

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK AUIRF4905L

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK AUIRF4905L, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.65mm

GBP 3.49

1

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK AUIRF4905L

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK AUIRF4905L, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.65mm

GBP 1.80

1

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK IRF4905STRLPBF

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK IRF4905STRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm

GBP 2.07

1

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK AUIRF4905L

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK AUIRF4905L, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.65mm

GBP 1.71

1

Infineon N-Channel MOSFET, 53 A, 55 V, 3-Pin TO-247AC IRFP044NPBF

Infineon N-Channel MOSFET, 53 A, 55 V, 3-Pin TO-247AC IRFP044NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 120 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.3mm

GBP 1.12

1

Infineon N-Channel MOSFET, 53 A, 55 V, 3-Pin TO-247AC IRFP044NPBF

Infineon N-Channel MOSFET, 53 A, 55 V, 3-Pin TO-247AC IRFP044NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 120 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.3mm

GBP 1.30

1

Infineon P-Channel MOSFET, 74 A, 55 V, 3-Pin I2PAK IRF4905LPBF

Infineon P-Channel MOSFET, 74 A, 55 V, 3-Pin I2PAK IRF4905LPBF, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 3.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 10.54mm

GBP 1.78

1

Infineon P-Channel MOSFET, 74 A, 55 V, 3-Pin I2PAK IRF4905LPBF

Infineon P-Channel MOSFET, 74 A, 55 V, 3-Pin I2PAK IRF4905LPBF, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 3.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 10.54mm

GBP 2.28

1

Infineon P-Channel MOSFET, 74 A, 55 V, 3-Pin I2PAK IRF4905LPBF

Infineon P-Channel MOSFET, 74 A, 55 V, 3-Pin I2PAK IRF4905LPBF, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 3.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 10.54mm

GBP 1.94

1

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Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK IRLR9343TRPBF

Infineon Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON

Infineon N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L35ATMA1

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin IPAK IRLU9343PBF

Infineon N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L35ATMA1

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin IPAK IRLU9343PBF

Infineon N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L35ATMA1

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin IPAK IRLU9343PBF

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK IRLR9343TRPBF

Infineon P-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK IRLR9343TRPBF

Infineon Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON

Infineon Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON

Infineon IKW30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin PG-TO247-3

Infineon IKW30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin PG-TO247-3

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK IRF4905STRLPBF

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK IRF4905STRLPBF

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK AUIRF4905L

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK AUIRF4905L

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin D2PAK IRF4905STRLPBF

Infineon P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK AUIRF4905L

Infineon N-Channel MOSFET, 53 A, 55 V, 3-Pin TO-247AC IRFP044NPBF

Infineon N-Channel MOSFET, 53 A, 55 V, 3-Pin TO-247AC IRFP044NPBF

Infineon P-Channel MOSFET, 74 A, 55 V, 3-Pin I2PAK IRF4905LPBF

Infineon P-Channel MOSFET, 74 A, 55 V, 3-Pin I2PAK IRF4905LPBF

Infineon P-Channel MOSFET, 74 A, 55 V, 3-Pin I2PAK IRF4905LPBF

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