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Infineon N-Channel MOSFET, 240 A, 80 V TOLL (HSOF-8) IAUT240N08S5N019ATMA1

GBP 4.50

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 240 A, 80 V, 8-Pin PG-HSOG IAUS240N08S5N019ATMA1

GBP 4.65

1

Infineon N-Channel MOSFET, 240 A, 80 V TOLL (HSOF-8) IAUT240N08S5N019ATMA1

Infineon N-Channel MOSFET, 240 A, 80 V TOLL (HSOF-8) IAUT240N08S5N019ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.9 mO, Maximum Gate Threshold Voltage: 3.8V

GBP 4.91

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 240 A, 80 V, 8-Pin PG-HSOG IAUS240N08S5N019ATMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 240 A, 80 V, 8-Pin PG-HSOG IAUS240N08S5N019ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0019 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: OptiMOS 5

GBP 5.07

1

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 380 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 4.83mm

GBP 4.74

1

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 380 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 4.83mm

GBP 5.59

1

Infineon N-Channel MOSFET, 240 A, 260 A, 75 V, 7-Pin D2PAK AUIRFS3107-7P

Infineon N-Channel MOSFET, 240 A, 260 A, 75 V, 7-Pin D2PAK AUIRFS3107-7P, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 370 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm

GBP 4.40

1

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 380 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 4.83mm

GBP 5.42

1

Infineon N-Channel MOSFET, 240 A, 260 A, 75 V, 7-Pin D2PAK AUIRFS3107-7P

Infineon N-Channel MOSFET, 240 A, 260 A, 75 V, 7-Pin D2PAK AUIRFS3107-7P, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 370 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm

GBP 4.40

1

Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 SPW24N60C3FKSA1

Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 SPW24N60C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 160 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 240 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.2V

GBP 5.30

1

Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 SPW24N60C3FKSA1

Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 SPW24N60C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 160 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 240 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.2V

GBP 5.16

1

Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 SPW24N60C3FKSA1

Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 SPW24N60C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 160 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 240 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.2V

GBP 5.99

1

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Infineon N-Channel MOSFET, 240 A, 80 V TOLL (HSOF-8) IAUT240N08S5N019ATMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 240 A, 80 V, 8-Pin PG-HSOG IAUS240N08S5N019ATMA1

Infineon N-Channel MOSFET, 240 A, 80 V TOLL (HSOF-8) IAUT240N08S5N019ATMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 240 A, 80 V, 8-Pin PG-HSOG IAUS240N08S5N019ATMA1

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P

Infineon N-Channel MOSFET, 240 A, 260 A, 75 V, 7-Pin D2PAK AUIRFS3107-7P

Infineon N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK AUIRLS3036-7P

Infineon N-Channel MOSFET, 240 A, 260 A, 75 V, 7-Pin D2PAK AUIRFS3107-7P

Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 SPW24N60C3FKSA1

Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 SPW24N60C3FKSA1

Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 SPW24N60C3FKSA1

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