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Infineon DDB6U145N16LHOSA1, 3-phase Bridge Rectifier Module, 145A 1600V, 6-Pin

Infineon DDB6U145N16LHOSA1, 3-phase Bridge Rectifier Module, 145A 1600V, 6-Pin, Bridge Type: Three Phase, Mounting Type: Panel Mount, Configuration: Single, Peak Non-Repetitive Forward Surge Current: 1.2kA, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Peak Forward Voltage: 1.43V, Peak Reverse Current: 5mA, Length: 94mm, Dimensions: 94 x 42 x 30mm, Width: 42mm

GBP 123.01

1

Infineon DDB6U145N16LHOSA1, 3-phase Bridge Rectifier Module, 145A 1600V, 6-Pin

Infineon DDB6U145N16LHOSA1, 3-phase Bridge Rectifier Module, 145A 1600V, 6-Pin, Bridge Type: Three Phase, Mounting Type: Panel Mount, Diode Technology: Silicon Junction, Configuration: Single, Peak Non-Repetitive Forward Surge Current: 1.2kA, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Peak Forward Voltage: 1.43V, Peak Reverse Current: 5mA, Length: 94mm, Dimensions: 94 x 42 x 30mm

GBP 123.01

1

Infineon DDB6U205N16LHOSA1, 3-phase Bridge Rectifier Module, 208A 1600V, 6-Pin ISOPACK

Infineon DDB6U205N16LHOSA1, 3-phase Bridge Rectifier Module, 208A 1600V, 6-Pin ISOPACK, Bridge Type: Three Phase, Mounting Type: Panel Mount, Configuration: Single, Peak Non-Repetitive Forward Surge Current: 1.6kA, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Peak Forward Voltage: 1.47V, Peak Reverse Current: 10mA, Length: 94mm, Dimensions: 94 x 42 x 30mm

GBP 130.59

1

Infineon DDB6U205N16LHOSA1, 3-phase Bridge Rectifier Module, 208A 1600V, 6-Pin ISOPACK

Infineon DDB6U205N16LHOSA1, 3-phase Bridge Rectifier Module, 208A 1600V, 6-Pin ISOPACK, Bridge Type: Three Phase, Mounting Type: Panel Mount, Diode Technology: Silicon Junction, Configuration: Single, Peak Non-Repetitive Forward Surge Current: 1.6kA, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Peak Forward Voltage: 1.47V, Peak Reverse Current: 10mA, Length: 94mm, Dimensions: 94 x 42 x 30mm

GBP 130.59

1

Infineon 1600V 260A, Silicon Junction Diode, 2-Pin ND260N16KHPSA1

Infineon 1600V 260A, Silicon Junction Diode, 2-Pin ND260N16KHPSA1, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 1.32V, Peak Non-Repetitive Forward Surge Current: 9.5kA

GBP 99.54

1

Infineon 1600V 600A, Silicon Junction Diode, 2-Pin DZ600N16KHPSA1

Infineon 1600V 600A, Silicon Junction Diode, 2-Pin DZ600N16KHPSA1, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 1.4V, Peak Non-Repetitive Forward Surge Current: 22kA

GBP 169.44

1

Infineon 1200V 600A, Silicon Junction Diode, 2-Pin DZ600N12KHPSA1

Infineon 1200V 600A, Silicon Junction Diode, 2-Pin DZ600N12KHPSA1, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 1.4V, Peak Non-Repetitive Forward Surge Current: 22kA

GBP 162.48

1

Infineon 1600V 104A, Silicon Junction Diode, 2-Pin ND104N16KHPSA1

Infineon 1600V 104A, Silicon Junction Diode, 2-Pin ND104N16KHPSA1, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 1.4V, Peak Non-Repetitive Forward Surge Current: 2.9kA

GBP 93.61

1

Infineon 1200V 350A, Silicon Junction Diode, 2-Pin ND350N12KHPSA1

Infineon 1200V 350A, Silicon Junction Diode, 2-Pin ND350N12KHPSA1, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 1.28V, Peak Non-Repetitive Forward Surge Current: 13kA

GBP 113.01

1

Infineon 1600V 350A, Silicon Junction Diode, 2-Pin ND350N16KHPSA1

Infineon 1600V 350A, Silicon Junction Diode, 2-Pin ND350N16KHPSA1, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 1.28V, Peak Non-Repetitive Forward Surge Current: 13kA

GBP 118.36

1

Infineon 1600V 260A, Silicon Junction Diode, 2-Pin ND260N16KHPSA1

Infineon 1600V 260A, Silicon Junction Diode, 2-Pin ND260N16KHPSA1, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 1.32V, Peak Non-Repetitive Forward Surge Current: 9.5kA

GBP 96.93

1

Infineon 1600V 600A, Silicon Junction Diode, 2-Pin DZ600N16KHPSA1

Infineon 1600V 600A, Silicon Junction Diode, 2-Pin DZ600N16KHPSA1, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 1.4V, Peak Non-Repetitive Forward Surge Current: 22kA

GBP 169.44

1

Infineon 1200V 350A, Silicon Junction Diode, 2-Pin ND350N12KHPSA1

Infineon 1200V 350A, Silicon Junction Diode, 2-Pin ND350N12KHPSA1, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 1.28V, Peak Non-Repetitive Forward Surge Current: 13kA

GBP 113.01

1

Infineon 1600V 350A, Silicon Junction Diode, 2-Pin ND350N16KHPSA1

Infineon 1600V 350A, Silicon Junction Diode, 2-Pin ND350N16KHPSA1, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 1.28V, Peak Non-Repetitive Forward Surge Current: 13kA

GBP 118.36

1

Infineon 1200V 600A, Silicon Junction Diode, 2-Pin DZ600N12KHPSA1

Infineon 1200V 600A, Silicon Junction Diode, 2-Pin DZ600N12KHPSA1, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 1.4V, Peak Non-Repetitive Forward Surge Current: 22kA

GBP 162.48

1

Infineon 12 N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 FS45MR12W1M1B11BOMA1

GBP 102.28

1

Infineon 2ED300C17SROHSBPSA1, MOSFET 2, 30 A, 16V 45-Pin, DSO

Infineon 2ED300C17SROHSBPSA1, MOSFET 2, 30 A, 16V 45-Pin, DSO, Topology: Galvanic Isolated, Bridge Type: Half Bridge, Polarity: Non-Inverting, Mounting Type: Surface Mount, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -25 °C, MPN: 2ED300C17-S ROHS

GBP 151.71

1

Infineon 2ED300C17SROHSBPSA1, MOSFET 2, 30 A, 16V 45-Pin, DSO

Infineon 2ED300C17SROHSBPSA1, MOSFET 2, 30 A, 16V 45-Pin, DSO, Topology: Galvanic Isolated, Bridge Type: Half Bridge, Polarity: Non-Inverting, Mounting Type: Surface Mount, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -25 °C, MPN: 2ED300C17-S ROHS

GBP 147.38

1

Infineon 12 N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 FS45MR12W1M1B11BOMA1

Infineon 12 N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 FS45MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.066 Ω, Maximum Gate Threshold Voltage: 20V, Series: CoolSiC

GBP 111.57

1

Infineon 12 N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 FS45MR12W1M1B11BOMA1

Infineon 12 N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 FS45MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.066 Ω, Maximum Gate Threshold Voltage: 20V, Series: CoolSiC

GBP 111.57

1

Infineon 2ED300C17STROHSBPSA1, MOSFET 2, 30 A, 16V 45-Pin, AG-EICE

Infineon 2ED300C17STROHSBPSA1, MOSFET 2, 30 A, 16V 45-Pin, AG-EICE, Logic Type: CMOS, Topology: Galvanic Isolated, Bridge Type: Half Bridge, Polarity: Non-Inverting, Mounting Type: Surface Mount, Input Logic Compatibility: 15V, CMOS, Dimensions: 60.5 x 72 x 25mm, Length: 60.5mm, MPN: 2ED300C17-ST ROHS

GBP 171.08

1

Infineon FZ600R12KS4HOSA1 Single IGBT Module, 700 A 1200 V AG-62MM-2, Panel Mount

Infineon FZ600R12KS4HOSA1 Single IGBT Module, 700 A 1200 V AG-62MM-2, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 3.9 kW, Dimensions: 106.4 x 61.4 x 36.5mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Width: 61.4mm

GBP 131.85

1

Infineon FZ600R12KS4HOSA1 Single IGBT Module, 700 A 1200 V AG-62MM-2, Panel Mount

Infineon FZ600R12KS4HOSA1 Single IGBT Module, 700 A 1200 V AG-62MM-2, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 3.9 kW, Dimensions: 106.4 x 61.4 x 36.5mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Width: 61.4mm

GBP 159.81

1

Infineon FS75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V, 28-Pin EconoPACK 2, PCB Mount

Infineon FS75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V, 28-Pin EconoPACK 2, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 350 W, Dimensions: 107.5 x 45 x 17mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 95.63

1

Infineon 1600V 104A, Dual Silicon Junction Diode, 3-Pin DD104N16KHPSA1

Infineon 1600V 104A, Dual Silicon Junction Diode, 3-Pin DD104N16KHPSA1, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.4V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.9kA

GBP 97.61

1

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Infineon DDB6U145N16LHOSA1, 3-phase Bridge Rectifier Module, 145A 1600V, 6-Pin

Infineon DDB6U145N16LHOSA1, 3-phase Bridge Rectifier Module, 145A 1600V, 6-Pin

Infineon DDB6U205N16LHOSA1, 3-phase Bridge Rectifier Module, 208A 1600V, 6-Pin ISOPACK

Infineon DDB6U205N16LHOSA1, 3-phase Bridge Rectifier Module, 208A 1600V, 6-Pin ISOPACK

Infineon 1600V 260A, Silicon Junction Diode, 2-Pin ND260N16KHPSA1

Infineon 1600V 600A, Silicon Junction Diode, 2-Pin DZ600N16KHPSA1

Infineon 1200V 600A, Silicon Junction Diode, 2-Pin DZ600N12KHPSA1

Infineon 1600V 104A, Silicon Junction Diode, 2-Pin ND104N16KHPSA1

Infineon 1200V 350A, Silicon Junction Diode, 2-Pin ND350N12KHPSA1

Infineon 1600V 350A, Silicon Junction Diode, 2-Pin ND350N16KHPSA1

Infineon 1600V 260A, Silicon Junction Diode, 2-Pin ND260N16KHPSA1

Infineon 1600V 600A, Silicon Junction Diode, 2-Pin DZ600N16KHPSA1

Infineon 1200V 350A, Silicon Junction Diode, 2-Pin ND350N12KHPSA1

Infineon 1600V 350A, Silicon Junction Diode, 2-Pin ND350N16KHPSA1

Infineon 1200V 600A, Silicon Junction Diode, 2-Pin DZ600N12KHPSA1

Infineon 12 N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 FS45MR12W1M1B11BOMA1

Infineon 2ED300C17SROHSBPSA1, MOSFET 2, 30 A, 16V 45-Pin, DSO

Infineon 2ED300C17SROHSBPSA1, MOSFET 2, 30 A, 16V 45-Pin, DSO

Infineon 12 N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 FS45MR12W1M1B11BOMA1

Infineon 12 N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 FS45MR12W1M1B11BOMA1

Infineon 2ED300C17STROHSBPSA1, MOSFET 2, 30 A, 16V 45-Pin, AG-EICE

Infineon FZ600R12KS4HOSA1 Single IGBT Module, 700 A 1200 V AG-62MM-2, Panel Mount

Infineon FZ600R12KS4HOSA1 Single IGBT Module, 700 A 1200 V AG-62MM-2, Panel Mount

Infineon FS75R12KE3BOSA1 3 Phase Bridge IGBT Module, 105 A 1200 V, 28-Pin EconoPACK 2, PCB Mount

Infineon 1600V 104A, Dual Silicon Junction Diode, 3-Pin DD104N16KHPSA1

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