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Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO

Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO, Fall Time: 45ns, Rise Time: 100ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Time Delay: 800ns, Bridge Type: Full Bridge, Polarity: Non-Inverting, Mounting Type: Surface Mount, MPN: 6ED003L06-F2

GBP 1.55

1

Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO

Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO, Fall Time: 45ns, Rise Time: 100ns, Topology: Galvanic Isolated, High and Low Sides Dependency: Independent, Time Delay: 800ns, Bridge Type: Full Bridge, Polarity: Non-Inverting, Mounting Type: Surface Mount, MPN: 6ED003L06-F2

GBP 2.77

1

Infineon TLE63892GVXUMA1, Buck Controller 420 kHz 14-Pin, DSO-14-1

Infineon TLE63892GVXUMA1, Buck Controller 420 kHz 14-Pin, DSO-14-1, Controller Type: Step Down, Width: 4mm, Mounting Type: Surface Mount, Dimensions: 8.75 x 4 x 1.57mm, Length: 8.75mm, Maximum Input Voltage: 60 V, Maximum Operating Temperature: +150 °C, Maximum Output Current: 2.3A, Maximum Output Voltage: 15 V, MPN: TLE6389-2GV

GBP 1.07

1

Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO

Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO, Minimum Operating Supply Voltage: 13 V, Maximum Operating Supply Voltage: 17.5 V, Topology: Galvanic Isolated, Mounting Type: Surface Mount, Peak Output Current: 420mA, Polarity: Non-Inverting, Bridge Type: Full Bridge, Input Logic Compatibility: CMOS, LSTTL, High and Low Sides Dependency: Independent, Dimensions: 18.1 x 7.6 x 2.35mm, Fall Time: 45ns, MPN: 6ED003L06-F2

GBP 2.77

1

Infineon IRG8P60N120KDPBF IGBT, 100 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG8P60N120KDPBF IGBT, 100 A 1200 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 420 W, Switching Speed: 8 → 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.31 x 20.7mm, Energy Rating: 1.8mJ, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 8.37

1

Infineon BC848CE6327HTSA1 NPN Transistor, 100 mA, 30 V, 3-Pin SOT-23

Infineon BC848CE6327HTSA1 NPN Transistor, 100 mA, 30 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 330 mW, Minimum DC Current Gain: 420, Transistor Configuration: Single, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 250 MHz, Dimensions: 1 x 2.9 x 1.3mm, Height: 1mm

GBP 0.05

1

Infineon N-Channel MOSFET, 8.7 A, 700 V, 3-Pin TO-220 IPA65R420CFDXKSA1

Infineon N-Channel MOSFET, 8.7 A, 700 V, 3-Pin TO-220 IPA65R420CFDXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 420 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 31.2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 16.15mm, Length: 10.65mm

GBP 1.67

1

Infineon N-Channel MOSFET, 8.7 A, 700 V, 3-Pin TO-220 IPA65R420CFDXKSA1

Infineon N-Channel MOSFET, 8.7 A, 700 V, 3-Pin TO-220 IPA65R420CFDXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 420 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 31.2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 16.15mm, Length: 10.65mm

GBP 1.97

1

Infineon N-Channel MOSFET, 8.7 A, 700 V, 3-Pin TO-220 IPA65R420CFDXKSA1

Infineon N-Channel MOSFET, 8.7 A, 700 V, 3-Pin TO-220 IPA65R420CFDXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 420 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 31.2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 16.15mm, Length: 10.65mm

GBP 1.97

1

Infineon BC857CWH6327XTSA1 PNP Transistor, 100 mA, 45 V, 3-Pin SOT-323

Infineon BC857CWH6327XTSA1 PNP Transistor, 100 mA, 45 V, 3-Pin SOT-323, Package Type: SOT-323 (SC-70), Mounting Type: Surface Mount, Maximum Power Dissipation: 250 mW, Minimum DC Current Gain: 420, Transistor Configuration: Single, Maximum Collector Base Voltage: 50 V, Maximum Operating Frequency: 250 MHz, Dimensions: 2 x 1.25 x 0.8mm

GBP 0.02

1

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Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO

Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO

Infineon TLE63892GVXUMA1, Buck Controller 420 kHz 14-Pin, DSO-14-1

Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO

Infineon IRG8P60N120KDPBF IGBT, 100 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon BC848CE6327HTSA1 NPN Transistor, 100 mA, 30 V, 3-Pin SOT-23

Infineon N-Channel MOSFET, 8.7 A, 700 V, 3-Pin TO-220 IPA65R420CFDXKSA1

Infineon N-Channel MOSFET, 8.7 A, 700 V, 3-Pin TO-220 IPA65R420CFDXKSA1

Infineon N-Channel MOSFET, 8.7 A, 700 V, 3-Pin TO-220 IPA65R420CFDXKSA1

Infineon BC857CWH6327XTSA1 PNP Transistor, 100 mA, 45 V, 3-Pin SOT-323

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