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Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK

Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK, MPN: IRLR2905TRLPBF

GBP 0.89

1

Infineon N-Channel MOSFET, 42 A, 100 V, 3-Pin D2PAK

Infineon N-Channel MOSFET, 42 A, 100 V, 3-Pin D2PAK, MPN: IRF1310NSTRLPBF

GBP 1.44

1

Infineon Quad PWM Controller, 42 V, 40 kHz 28-Pin, DSO

Infineon Quad PWM Controller, 42 V, 40 kHz 28-Pin, DSO, MPN: TLE72422GXUMA2

GBP 5.12

1

Infineon N-Channel MOSFET, 42 A, 40 V, 3-Pin DPAK IRFR4104TRLPBF

GBP 1.31

1

Infineon Quad PWM Controller, 42 V, 40 kHz 28-Pin, DSO

Infineon Quad PWM Controller, 42 V, 40 kHz 28-Pin, DSO, Maximum Source Current: -30mA, Maximum Supply Current: 30 mA, MPN: TLE72422GXUMA2

GBP 4.10

1

Infineon Quad PWM Controller, 42 V, 40 kHz 28-Pin, DSO

Infineon Quad PWM Controller, 42 V, 40 kHz 28-Pin, DSO, Maximum Source Current: -30mA, Maximum Supply Current: 30 mA, MPN: TLE72422GXUMA2

GBP 5.59

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF

GBP 1.50

1

Infineon N-Channel MOSFET, 42 A, 40 V, 3-Pin DPAK IRFR4104TRLPBF

Infineon N-Channel MOSFET, 42 A, 40 V, 3-Pin DPAK IRFR4104TRLPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0055 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: HEXFET

GBP 1.43

1

Infineon N-Channel MOSFET, 42 A, 40 V, 3-Pin DPAK IRFR4104TRLPBF

Infineon N-Channel MOSFET, 42 A, 40 V, 3-Pin DPAK IRFR4104TRLPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0055 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: HEXFET

GBP 0.65

1

Infineon N-Channel MOSFET, 42 A, 100 V, 3-Pin D2PAK

Infineon N-Channel MOSFET, 42 A, 100 V, 3-Pin D2PAK, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.036 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: HEXFET, MPN: IRF1310NSTRLPBF

GBP 1.04

1

Infineon N-Channel MOSFET, 42 A, 100 V, 3-Pin D2PAK

Infineon N-Channel MOSFET, 42 A, 100 V, 3-Pin D2PAK, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.036 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: HEXFET, MPN: IRF1310NSTRLPBF

GBP 1.57

1

Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK

Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.027 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Number of Elements per Chip: 1, Series: HEXFET, MPN: IRLR2905TRLPBF

GBP 0.97

1

Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK

Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.027 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Number of Elements per Chip: 1, Series: HEXFET, MPN: IRLR2905TRLPBF

GBP 0.55

1

Infineon IRG4BC40KPBF IGBT, 42 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRG4BC40KPBF IGBT, 42 A 600 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 10.54 x 4.69 x 8.77mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 2.57

1

Infineon IRG4BC40KPBF IGBT, 42 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRG4BC40KPBF IGBT, 42 A 600 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 10.54 x 4.69 x 8.77mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.02

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF

Infineon Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0075 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: ? 20V, Series: HEXFET

GBP 1.64

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF

Infineon Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0075 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: ? 20V, Series: HEXFET

GBP 0.73

1

Infineon N-Channel MOSFET, 42 A, 100 V, 8-Pin TDSON BSC160N10NS3GATMA1

Infineon N-Channel MOSFET, 42 A, 100 V, 8-Pin TDSON BSC160N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.73

1

Infineon N-Channel MOSFET, 42 A, 100 V, 8-Pin TDSON BSC160N10NS3GATMA1

Infineon N-Channel MOSFET, 42 A, 100 V, 8-Pin TDSON BSC160N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 1.02

1

Infineon N-Channel MOSFET, 42 A, 100 V, 8-Pin TDSON BSC160N10NS3GATMA1

Infineon N-Channel MOSFET, 42 A, 100 V, 8-Pin TDSON BSC160N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.53

1

Infineon N-Channel MOSFET, 42 A, 30 V, 8-Pin PQFN IRFH3702TRPBF

Infineon N-Channel MOSFET, 42 A, 30 V, 8-Pin PQFN IRFH3702TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 11.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 2.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1V

GBP 0.52

1

Infineon N-Channel MOSFET, 42 A, 30 V, 8-Pin PQFN IRFH3702TRPBF

Infineon N-Channel MOSFET, 42 A, 30 V, 8-Pin PQFN IRFH3702TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 11.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 2.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1V

GBP 0.33

1

Infineon N-Channel MOSFET, 42 A, 30 V, 8-Pin PQFN IRFH3702TRPBF

Infineon N-Channel MOSFET, 42 A, 30 V, 8-Pin PQFN IRFH3702TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 11.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 2.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1V

GBP 0.22

1

Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK IRLR2905TRPBF

Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK IRLR2905TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 2.39mm

GBP 1.09

1

Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK IRLR2905TRPBF

Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK IRLR2905TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 2.39mm

GBP 0.84

1

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Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK

Infineon N-Channel MOSFET, 42 A, 100 V, 3-Pin D2PAK

Infineon Quad PWM Controller, 42 V, 40 kHz 28-Pin, DSO

Infineon N-Channel MOSFET, 42 A, 40 V, 3-Pin DPAK IRFR4104TRLPBF

Infineon Quad PWM Controller, 42 V, 40 kHz 28-Pin, DSO

Infineon Quad PWM Controller, 42 V, 40 kHz 28-Pin, DSO

Infineon Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF

Infineon N-Channel MOSFET, 42 A, 40 V, 3-Pin DPAK IRFR4104TRLPBF

Infineon N-Channel MOSFET, 42 A, 40 V, 3-Pin DPAK IRFR4104TRLPBF

Infineon N-Channel MOSFET, 42 A, 100 V, 3-Pin D2PAK

Infineon N-Channel MOSFET, 42 A, 100 V, 3-Pin D2PAK

Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK

Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK

Infineon IRG4BC40KPBF IGBT, 42 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRG4BC40KPBF IGBT, 42 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF

Infineon Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF

Infineon N-Channel MOSFET, 42 A, 100 V, 8-Pin TDSON BSC160N10NS3GATMA1

Infineon N-Channel MOSFET, 42 A, 100 V, 8-Pin TDSON BSC160N10NS3GATMA1

Infineon N-Channel MOSFET, 42 A, 100 V, 8-Pin TDSON BSC160N10NS3GATMA1

Infineon N-Channel MOSFET, 42 A, 30 V, 8-Pin PQFN IRFH3702TRPBF

Infineon N-Channel MOSFET, 42 A, 30 V, 8-Pin PQFN IRFH3702TRPBF

Infineon N-Channel MOSFET, 42 A, 30 V, 8-Pin PQFN IRFH3702TRPBF

Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK IRLR2905TRPBF

Infineon N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK IRLR2905TRPBF

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