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Infineon N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC016N03MS G

Infineon N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC016N03MS G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.49

1

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

GBP 3.36

1

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

GBP 2.92

1

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2, Fall Time: 15ns

GBP 2.01

1

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2, Fall Time: 15ns

GBP 2.31

1

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2, Fall Time: 15ns

GBP 3.19

1

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2, Fall Time: 15ns

GBP 3.66

1

Infineon N-Channel MOSFET, 93 A, 30 V, 8-Pin TDSON BSC042N03LSGATMA1

Infineon N-Channel MOSFET, 93 A, 30 V, 8-Pin TDSON BSC042N03LSGATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm, MPN: BSC042N03LS G

GBP 0.23

1

Infineon N-Channel MOSFET, 93 A, 30 V, 8-Pin TDSON BSC042N03LSGATMA1

Infineon N-Channel MOSFET, 93 A, 30 V, 8-Pin TDSON BSC042N03LSGATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm, MPN: BSC042N03LS G

GBP 0.23

1

Infineon P-Channel MOSFET, 50 A, 30 V, 5-Pin DPAK SPD50P03LGBTMA1

Infineon P-Channel MOSFET, 50 A, 30 V, 5-Pin DPAK SPD50P03LGBTMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.41mm, MPN: SPD50P03L G

GBP 0.54

1

Infineon N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK IPD050N03LGBTMA1

Infineon N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK IPD050N03LGBTMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.41mm, MPN: IPD050N03L G

GBP 0.81

1

Infineon N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK IPD050N03LGBTMA1

Infineon N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK IPD050N03LGBTMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.41mm, MPN: IPD050N03L G

GBP 0.30

1

Infineon N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD040N03LGBTMA1

Infineon N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD040N03LGBTMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 79 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.41mm, MPN: IPD040N03L G

GBP 0.74

1

Infineon N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD040N03LGBTMA1

Infineon N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD040N03LGBTMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 79 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.41mm, MPN: IPD040N03L G

GBP 0.81

1

Infineon N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK IPD075N03LGATMA1

Infineon N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK IPD075N03LGATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 11.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 47 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.1V, MPN: IPD075N03L G

GBP 0.38

1

Infineon P-Channel MOSFET, 50 A, 30 V, 5-Pin DPAK SPD50P03LGBTMA1

Infineon P-Channel MOSFET, 50 A, 30 V, 5-Pin DPAK SPD50P03LGBTMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.41mm, MPN: SPD50P03L G

GBP 0.54

1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 1.1mm

GBP 0.56

1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 1.1mm

GBP 0.57

1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 1.1mm

GBP 0.57

1

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 105 W

GBP 1.45

1

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 105 W

GBP 1.63

1

Infineon N-Channel MOSFET, 140 A, 30 V D2PAK IRL3803STRLPBF

GBP 1.52

1

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

GBP 0.61

1

Infineon N-Channel MOSFET, 23 A, 30 V DPAK IRLR2703TRPBF

GBP 0.63

1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 219 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm

GBP 1.90

1

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Infineon N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC016N03MS G

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21242AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon TDA21240AUMA1, 40 A, 4.5 → 16V 30-Pin, PG-IQFN-30-2

Infineon N-Channel MOSFET, 93 A, 30 V, 8-Pin TDSON BSC042N03LSGATMA1

Infineon N-Channel MOSFET, 93 A, 30 V, 8-Pin TDSON BSC042N03LSGATMA1

Infineon P-Channel MOSFET, 50 A, 30 V, 5-Pin DPAK SPD50P03LGBTMA1

Infineon N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK IPD050N03LGBTMA1

Infineon N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK IPD050N03LGBTMA1

Infineon N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD040N03LGBTMA1

Infineon N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD040N03LGBTMA1

Infineon N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK IPD075N03LGATMA1

Infineon P-Channel MOSFET, 50 A, 30 V, 5-Pin DPAK SPD50P03LGBTMA1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon P-Channel MOSFET, 30 A, 30 V, 8-Pin TDSON BSC080P03LSGAUMA1

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Infineon N-Channel MOSFET, 140 A, 30 V D2PAK IRL3803STRLPBF

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 23 A, 30 V DPAK IRLR2703TRPBF

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 IPP60R125C6XKSA1

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