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IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount, Transistor Configuration: Single, Dimensions: 16.05 x 14 x 5.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.41

1

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Transistor Configuration: Series, Dimensions: 25 x 23 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.11

1

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount, Transistor Configuration: Single, Length: 16.05mm, Width: 14mm, Height: 5.1mm, Dimensions: 16.05 x 14 x 5.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 7.43

1

IXYS 2.7 A rms/A dc SPNO Solid State Relay, DC, PCB Mount, MOSFET

IXYS 2.7 A rms/A dc SPNO Solid State Relay, DC, PCB Mount, MOSFET, Terminal Type: PCB Pin, Package Style: ISO Plus-264, Maximum Turn On Time: 25 ms, Dimensions: 19.914 x 5.029 x 26.162mm, Capacitance: 1.1nF, Depth: 5.03mm, Height: 26.16mm, Length: 19.91mm, Off State Leakage Current: 1 μA, MPN: CPC1927J

GBP 7.08

1

IXYS 15 A rms/A dc SPNO Solid State Relay, DC, PCB Mount, MOSFET

IXYS 15 A rms/A dc SPNO Solid State Relay, DC, PCB Mount, MOSFET, Terminal Type: PCB Pin, Package Style: ISO Plus-264, Maximum Turn On Time: 25 ms, Dimensions: 19.914 x 5.029 x 26.162mm, Capacitance: 2.25nF, Depth: 5.03mm, Height: 26.16mm, Length: 19.91mm, Off State Leakage Current: 1 μA, MPN: CPC1918J

GBP 7.94

1

IXYS 1 A rms/A dc, 1.8 A dc SPNO Solid State Relay, AC/DC, Surface Mount, MOSFET

IXYS 1 A rms/A dc, 1.8 A dc SPNO Solid State Relay, AC/DC, Surface Mount, MOSFET, Terminal Type: PCB Pin, Package Style: Small - 6 Pin, Maximum Turn On Time: 2.5 ms, Dimensions: 8.382 x 6.35 x 3.302mm, Capacitance: 105pF, Depth: 6.35mm, Height: 3.3mm, Length: 8.38mm, Off State Leakage Current: 1 μA, MPN: LCA710S

GBP 5.47

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 5.1mm, Length: 16.05mm

GBP 6.10

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 5.1mm, Length: 16.05mm

GBP 5.77

1

IXYS N-Channel MOSFET, 50 A, 500 V, 3-Pin TO-268 IXFT50N50P3

IXYS N-Channel MOSFET, 50 A, 500 V, 3-Pin TO-268 IXFT50N50P3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 960 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 5.1mm, Length: 16.05mm

GBP 7.31

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 5.1mm, Length: 16.05mm

GBP 5.56

1

IXYS N-Channel MOSFET, 80 A, 250 V, 2 + Tab-Pin D2PAK IXFA80N25X3

IXYS N-Channel MOSFET, 80 A, 250 V, 2 + Tab-Pin D2PAK IXFA80N25X3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.4V

GBP 4.55

1

IXYS N-Channel MOSFET, 80 A, 250 V, 2 + Tab-Pin D2PAK IXFA80N25X3

IXYS N-Channel MOSFET, 80 A, 250 V, 2 + Tab-Pin D2PAK IXFA80N25X3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.4V

GBP 4.81

1

IXYS VBO22-16NO8, Bridge Rectifier Module, 17A 1600V, 4-Pin FO B B

IXYS VBO22-16NO8, Bridge Rectifier Module, 17A 1600V, 4-Pin FO B B, Bridge Type: Single Phase, Mounting Type: Screw Mount, Diode Technology: Silicon Junction, Peak Non-Repetitive Forward Surge Current: 440A, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Peak Forward Voltage: 2.2V, Peak Reverse Current: 300µA, Length: 28.5mm, Dimensions: 28.5 x 28.5 x 10mm

GBP 7.75

1

IXYS N-Channel MOSFET, 50 A, 300 V, 3-Pin TO-268 IXFT50N30Q3

IXYS N-Channel MOSFET, 50 A, 300 V, 3-Pin TO-268 IXFT50N30Q3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 5.1mm, Length: 16.05mm

GBP 8.61

1

IXYS N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-268HV IXFT60N65X2HV

IXYS N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-268HV IXFT60N65X2HV, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 52 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 780 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 7.20

1

IXYS VUO36-16NO8, 3-phase Bridge Rectifier Module, 35A 1600V, 5-Pin FO B B

IXYS VUO36-16NO8, 3-phase Bridge Rectifier Module, 35A 1600V, 5-Pin FO B B, Bridge Type: Three Phase, Mounting Type: Screw Mount, Diode Technology: Silicon Junction, Configuration: Single, Peak Non-Repetitive Forward Surge Current: 600A, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Peak Forward Voltage: 1.7V, Peak Reverse Current: 300µA, Length: 28.5mm, Dimensions: 28.5 x 28.5 x 10mm

GBP 7.84

1

IXYS VUO36-12NO8, 3-phase Bridge Rectifier Module, 35A 1200V, 5-Pin FO B B

IXYS VUO36-12NO8, 3-phase Bridge Rectifier Module, 35A 1200V, 5-Pin FO B B, Bridge Type: Three Phase, Mounting Type: Screw Mount, Diode Technology: Silicon Junction, Configuration: Single, Peak Non-Repetitive Forward Surge Current: 600A, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Peak Forward Voltage: 1.7V, Peak Reverse Current: 300µA, Length: 28.5mm, Dimensions: 28.5 x 28.5 x 10mm

GBP 7.79

1

IXYS VUO25-16NO8, 3-phase Bridge Rectifier Module, 25A 1600V, 5-Pin FO B B

IXYS VUO25-16NO8, 3-phase Bridge Rectifier Module, 25A 1600V, 5-Pin FO B B, Bridge Type: Three Phase, Mounting Type: Screw Mount, Diode Technology: Silicon Junction, Configuration: Single, Peak Non-Repetitive Forward Surge Current: 400A, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Peak Forward Voltage: 2.2V, Peak Reverse Current: 300µA, Length: 28.5mm, Dimensions: 28.5 x 28.5 x 10mm

GBP 7.75

1

IXYS VUO25-12NO8, 3-phase Bridge Rectifier Module, 25A 1200V, 5-Pin FO B B

IXYS VUO25-12NO8, 3-phase Bridge Rectifier Module, 25A 1200V, 5-Pin FO B B, Bridge Type: Three Phase, Mounting Type: Screw Mount, Diode Technology: Silicon Junction, Configuration: Single, Peak Non-Repetitive Forward Surge Current: 400A, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Peak Forward Voltage: 2.2V, Peak Reverse Current: 300µA, Length: 28.5mm, Dimensions: 28.5 x 28.5 x 10mm

GBP 8.22

1

IXYS N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-268HV IXFT60N65X2HV

IXYS N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-268HV IXFT60N65X2HV, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 52 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 780 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 6.80

1

IXYS VUO25-12NO8, 3-phase Bridge Rectifier Module, 25A 1200V, 5-Pin FO B B

IXYS VUO25-12NO8, 3-phase Bridge Rectifier Module, 25A 1200V, 5-Pin FO B B, Bridge Type: Three Phase, Mounting Type: Screw Mount, Diode Technology: Silicon Junction, Configuration: Single, Peak Non-Repetitive Forward Surge Current: 400A, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Peak Forward Voltage: 2.2V, Peak Reverse Current: 300µA, Length: 28.5mm, Dimensions: 28.5 x 28.5 x 10mm

GBP 7.08

1

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IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

IXYS 2.7 A rms/A dc SPNO Solid State Relay, DC, PCB Mount, MOSFET

IXYS 15 A rms/A dc SPNO Solid State Relay, DC, PCB Mount, MOSFET

IXYS 1 A rms/A dc, 1.8 A dc SPNO Solid State Relay, AC/DC, Surface Mount, MOSFET

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 500 V, 3-Pin TO-268 IXFT50N50P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 80 A, 250 V, 2 + Tab-Pin D2PAK IXFA80N25X3

IXYS N-Channel MOSFET, 80 A, 250 V, 2 + Tab-Pin D2PAK IXFA80N25X3

IXYS VBO22-16NO8, Bridge Rectifier Module, 17A 1600V, 4-Pin FO B B

IXYS N-Channel MOSFET, 50 A, 300 V, 3-Pin TO-268 IXFT50N30Q3

IXYS N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-268HV IXFT60N65X2HV

IXYS VUO36-16NO8, 3-phase Bridge Rectifier Module, 35A 1600V, 5-Pin FO B B

IXYS VUO36-12NO8, 3-phase Bridge Rectifier Module, 35A 1200V, 5-Pin FO B B

IXYS VUO25-16NO8, 3-phase Bridge Rectifier Module, 25A 1600V, 5-Pin FO B B

IXYS VUO25-12NO8, 3-phase Bridge Rectifier Module, 25A 1200V, 5-Pin FO B B

IXYS N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-268HV IXFT60N65X2HV

IXYS VUO25-12NO8, 3-phase Bridge Rectifier Module, 25A 1200V, 5-Pin FO B B

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