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IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 300 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.16

1

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 300 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.94

1

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 8.73

1

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 300 W, Switching Speed: 40kHz, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C

GBP 6.59

1

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 19.91 x 5.03 x 20.88mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.31

1

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 95 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 7.47

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 5.1mm, Length: 16.05mm

GBP 6.10

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.45

1

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 650 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.84

1

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 95 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 7.70

1

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 650 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 6.43

1

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 95 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 8.13

1

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin TO-264 IXFK80N60P3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin TO-264 IXFK80N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 8.54

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 5.1mm, Length: 16.05mm

GBP 5.56

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.17

1

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 650 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 6.82

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 5.1mm, Length: 16.05mm

GBP 5.77

1

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.45

1

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 19.91mm, Width: 5.03mm, Height: 20.88mm, Dimensions: 19.91 x 5.03 x 20.88mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 7.56

1

IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P

IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 460 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 4.77

1

IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P

IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 460 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 4.49

1

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 4.57

1

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 4.97

1

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 4.71

1

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 7.85

1

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IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3

IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin TO-264 IXFK80N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3

IXYS N-Channel MOSFET, 36 A, 600 V, 3-Pin TO-247 IXFH36N60P

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-268 IXFT50N60P3

IXYS N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IXFH50N60P3

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P

IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P

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