IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264, Through Hole
IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1.04 kW, Switching Speed: 50kHz, Transistor Configuration: Single, Length: 20.29mm, Width: 5.31mm, Height: 26.59mm, Dimensions: 20.29 x 5.31 x 26.59mm, Maximum Operating Temperature: +150 °C