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IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 290 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 10.62

1

IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 290 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 12.05

1

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 195 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 8.88

1

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Transistor Configuration: Series, Dimensions: 25 x 23 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 9.03

1

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 12.09

1

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Transistor Configuration: Series, Length: 25mm, Width: 23mm, Height: 5.5mm, Dimensions: 25 x 23 x 5.5mm, Maximum Operating Temperature: +150 °C

GBP 8.78

1

IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1150 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 8.99

1

IXYS IXYX100N120B3 IGBT, 225 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYX100N120B3 IGBT, 225 A 1200 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1.15 kW, Switching Speed: 30kHz, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.34mm, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C

GBP 13.27

1

IXYS IXYX100N120B3 IGBT, 225 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYX100N120B3 IGBT, 225 A 1200 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1150 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 15.36

1

IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1.15 kW, Switching Speed: 50kHz, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.34mm, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C

GBP 8.99

1

IXYS IXYX100N120B3 IGBT, 225 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYX100N120B3 IGBT, 225 A 1200 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1150 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 17.43

1

IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1150 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 8.84

1

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 195 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.34mm, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 8.88

1

IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 290 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.34mm, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 12.05

1

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 13.72

1

IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Dimensions: 38.23 x 25.25 x 9.6mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 14.33

1

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1250 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 11.93

1

IXYS IXYH30N120C3D1 IGBT, 66 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH30N120C3D1 IGBT, 66 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 416 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 9.30

1

IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 480 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.82

1

IXYS IXYH30N120C3D1 IGBT, 66 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH30N120C3D1 IGBT, 66 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 416 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 9.36

1

IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 625 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 9.52

1

IXYS IXYK100N120C3 IGBT, 188 A 1200 V, 3-Pin TO-264, Through Hole

IXYS IXYK100N120C3 IGBT, 188 A 1200 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1150 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 20.29 x 5.31 x 26.59mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 15.45

1

IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 480 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 10.00

1

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1250 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 13.52

1

IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 230 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 9.89

1

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IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYX100N120B3 IGBT, 225 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYX100N120B3 IGBT, 225 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYX100N120B3 IGBT, 225 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH30N120C3D1 IGBT, 66 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH30N120C3D1 IGBT, 66 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH50N120C3D1 IGBT, 90 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYK100N120C3 IGBT, 188 A 1200 V, 3-Pin TO-264, Through Hole

IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH20N120C3D1 IGBT, 36 A 1200 V, 3-Pin TO-247, Through Hole

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