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DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC, Minimum Operating Supply Voltage: 10 V, Maximum Operating Supply Voltage: 20 V, Topology: Half Bridge, Mounting Type: Surface Mount, Peak Output Current: 290 (High) mA, 600 (Low) mA, Polarity: Non-Inverting, Input Logic Compatibility: CMOS, TTL, High and Low Sides Dependency: Independent, Dimensions: 5 x 4 x 1.55mm, Fall Time: 60ns

GBP 0.37

1

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC, Minimum Operating Supply Voltage: 10 V, Maximum Operating Supply Voltage: 20 V, Topology: Half Bridge, Mounting Type: Surface Mount, Peak Output Current: 290 (High) mA, 600 (Low) mA, Polarity: Non-Inverting, Input Logic Compatibility: CMOS, TTL, High and Low Sides Dependency: Independent, Dimensions: 5 x 4 x 1.55mm, Fall Time: 90ns

GBP 0.20

1

DiodesZetex, Boost Converter, Step Up 1mA, 600 kHz 14-Pin, DFN

DiodesZetex, Boost Converter, Step Up 1mA, 600 kHz 14-Pin, DFN, Line Regulation: 0.5 %/V, Load Regulation: 2 %/A, Mounting Type: Surface Mount, Output Type: Fixed, Efficiency: 85%, Dimensions: 4.05 x 3.05 x 0.75mm, Length: 4.05mm, Maximum Input Voltage: 12 V, MPN: ZXLD1321DCATC

GBP 1.90

1

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC, Logic Type: CMOS, TTL, Fall Time: 90ns, Rise Time: 170ns, Topology: Half Bridge, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Surface Mount

GBP 0.20

1

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC, Logic Type: CMOS, TTL, Fall Time: 90ns, Rise Time: 170ns, Topology: Half Bridge, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Surface Mount

GBP 0.16

1

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC, Logic Type: CMOS, TTL, Fall Time: 60ns, Rise Time: 120ns, Topology: Half Bridge, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Surface Mount

GBP 0.37

1

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC, Logic Type: CMOS, TTL, Fall Time: 60ns, Rise Time: 120ns, Topology: Half Bridge, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Surface Mount

GBP 0.37

1

DiodesZetex P-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-323 Diodes Inc DMP2900UW-7

DiodesZetex P-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-323 Diodes Inc DMP2900UW-7, Maximum Drain Source Resistance: 0.75 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V

GBP 0.04

1

DiodesZetex P-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-323 Diodes Inc DMP2900UW-7

DiodesZetex P-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-323 Diodes Inc DMP2900UW-7, Maximum Drain Source Resistance: 0.75 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V

GBP 0.06

1

DiodesZetex Diodes Inc MMBT2222ALP4-7B NPN Transistor, 600 mA, 40 V, 3-Pin DFN

DiodesZetex Diodes Inc MMBT2222ALP4-7B NPN Transistor, 600 mA, 40 V, 3-Pin DFN, Mounting Type: Surface Mount, Maximum Power Dissipation: 1 W, Minimum DC Current Gain: 100, Transistor Configuration: Single, Maximum Collector Base Voltage: 75 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 300 MHz, Dimensions: 1.05 x 0.65 x 0.35mm

GBP 0.12

1

DiodesZetex P-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-23 Diodes Inc

DiodesZetex P-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-23 Diodes Inc, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 550 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1.1mm, Length: 3mm, MPN: DMP2004K-7

GBP 0.05

1

DiodesZetex Diodes Inc ZXTP5401GTA PNP Transistor, 600 mA, 150 V, 3 + Tab-Pin SOT-223

DiodesZetex Diodes Inc ZXTP5401GTA PNP Transistor, 600 mA, 150 V, 3 + Tab-Pin SOT-223, Mounting Type: Surface Mount, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -160 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 100 MHz, Dimensions: 6.7 x 3.7 x 1.65mm

GBP 0.33

1

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206A

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206A, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.01mm, Length: 4.77mm

GBP 0.66

1

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AV

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AV, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.01mm, Length: 4.77mm

GBP 0.58

1

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206ASTZ

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206ASTZ, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.01mm, Length: 4.77mm

GBP 0.51

1

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206ASTZ

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206ASTZ, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.01mm, Length: 4.77mm

GBP 0.58

1

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AVSTZ

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AVSTZ, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.01mm, Length: 4.77mm

GBP 0.58

1

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AV

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AV, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.01mm, Length: 4.77mm

GBP 0.27

1

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AVSTZ

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AVSTZ, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.01mm, Length: 4.77mm

GBP 0.53

1

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206A

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206A, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.01mm, Length: 4.77mm

GBP 0.25

1

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206A

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206A, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.01mm, Length: 4.77mm

GBP 0.42

1

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AV

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AV, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.01mm, Length: 4.77mm

GBP 0.42

1

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AVSTZ

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AVSTZ, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.01mm, Length: 4.77mm

GBP 0.25

1

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206ASTZ

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206ASTZ, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.01mm, Length: 4.77mm

GBP 0.25

1

DiodesZetex Diodes Inc MMBT5401-7-F PNP Transistor, 600 mA, 150 V, 3-Pin SOT-23

DiodesZetex Diodes Inc MMBT5401-7-F PNP Transistor, 600 mA, 150 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: -160 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 300 MHz, Dimensions: 3 x 1.4 x 1.1mm

GBP 0.05

1

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DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex, Boost Converter, Step Up 1mA, 600 kHz 14-Pin, DFN

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex P-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-323 Diodes Inc DMP2900UW-7

DiodesZetex P-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-323 Diodes Inc DMP2900UW-7

DiodesZetex Diodes Inc MMBT2222ALP4-7B NPN Transistor, 600 mA, 40 V, 3-Pin DFN

DiodesZetex P-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-23 Diodes Inc

DiodesZetex Diodes Inc ZXTP5401GTA PNP Transistor, 600 mA, 150 V, 3 + Tab-Pin SOT-223

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206A

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AV

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206ASTZ

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206ASTZ

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AVSTZ

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AV

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AVSTZ

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206A

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206A

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AV

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin TO-92 Diodes Inc ZVN4206AVSTZ

DiodesZetex N-Channel MOSFET, 600 mA, 60 V, 3-Pin E-Line Diodes Inc ZVN4206ASTZ

DiodesZetex Diodes Inc MMBT5401-7-F PNP Transistor, 600 mA, 150 V, 3-Pin SOT-23

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