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DiodesZetex N-Channel MOSFET, 17 (State) A, 21 (Steady) A, 20 V, 8-Pin TSSOP Diodes Inc DMN2011UTS-13

DiodesZetex N-Channel MOSFET, 17 (State) A, 21 (Steady) A, 20 V, 8-Pin TSSOP Diodes Inc DMN2011UTS-13

DiodesZetex N-Channel MOSFET, 17 (State) A, 21 (Steady) A, 20 V, 8-Pin TSSOP Diodes Inc DMN2011UTS-13, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Automotive Standard: AEC-Q101

GBP 0.05
1

DiodesZetex N-Channel MOSFET, 17 (State) A, 21 (Steady) A, 20 V, 8-Pin TSSOP Diodes Inc DMN2011UTS-13

DiodesZetex N-Channel MOSFET, 17 (State) A, 21 (Steady) A, 20 V, 8-Pin TSSOP Diodes Inc DMN2011UTS-13

DiodesZetex N-Channel MOSFET, 17 (State) A, 21 (Steady) A, 20 V, 8-Pin TSSOP Diodes Inc DMN2011UTS-13, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Automotive Standard: AEC-Q101

GBP 0.04
1

DiodesZetex N-Channel MOSFET, 17 (State) A, 21 (Steady) A, 20 V, 8-Pin TSSOP Diodes Inc DMN2011UTS-13

DiodesZetex N-Channel MOSFET, 17 (State) A, 21 (Steady) A, 20 V, 8-Pin TSSOP Diodes Inc DMN2011UTS-13

DiodesZetex N-Channel MOSFET, 17 (State) A, 21 (Steady) A, 20 V, 8-Pin TSSOP Diodes Inc DMN2011UTS-13, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Automotive Standard: AEC-Q101

GBP 0.05
1

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, 38 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2 V, 2.4V, Minimum Gate Threshold Voltage: 1.2 V, 1.4V, Maximum Power Dissipation: 1.8 W, Transistor Configuration: Dual Base, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.8mm

GBP 0.16
1

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, 38 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2 V, 2.4V, Minimum Gate Threshold Voltage: 1.2 V, 1.4V, Maximum Power Dissipation: 1.8 W, Transistor Configuration: Dual Base, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.8mm

GBP 0.15
1

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7

DiodesZetex Dual N/P-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, 38 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2 V, 2.4 V, Minimum Gate Threshold Voltage: 1.2 V, 1.4 V, Maximum Power Dissipation: 1.8 W, Transistor Configuration: Dual Base, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.8mm

GBP 0.44
1

DiodesZetex P-Channel MOSFET, 17 (State) A, 21 (Steady) A, 30 V, 8-Pin PowerDI5060 Diodes Inc DMP34M4SPS-13

DiodesZetex P-Channel MOSFET, 17 (State) A, 21 (Steady) A, 30 V, 8-Pin PowerDI5060 Diodes Inc DMP34M4SPS-13

DiodesZetex P-Channel MOSFET, 17 (State) A, 21 (Steady) A, 30 V, 8-Pin PowerDI5060 Diodes Inc DMP34M4SPS-13, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.6V, Minimum Gate Threshold Voltage: 1.6V, Maximum Power Dissipation: 3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Forward Diode Voltage: 1.2V

GBP 0.42
1

DiodesZetex P-Channel MOSFET, 17 (State) A, 21 (Steady) A, 30 V, 8-Pin PowerDI5060 Diodes Inc DMP34M4SPS-13

DiodesZetex P-Channel MOSFET, 17 (State) A, 21 (Steady) A, 30 V, 8-Pin PowerDI5060 Diodes Inc DMP34M4SPS-13

DiodesZetex P-Channel MOSFET, 17 (State) A, 21 (Steady) A, 30 V, 8-Pin PowerDI5060 Diodes Inc DMP34M4SPS-13, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.6V, Minimum Gate Threshold Voltage: 1.6V, Maximum Power Dissipation: 3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Forward Diode Voltage: 1.2V

GBP 0.34
1

DiodesZetex P-Channel MOSFET, 17 (State) A, 21 (Steady) A, 30 V, 8-Pin PowerDI5060 Diodes Inc DMP34M4SPS-13

DiodesZetex P-Channel MOSFET, 17 (State) A, 21 (Steady) A, 30 V, 8-Pin PowerDI5060 Diodes Inc DMP34M4SPS-13

DiodesZetex P-Channel MOSFET, 17 (State) A, 21 (Steady) A, 30 V, 8-Pin PowerDI5060 Diodes Inc DMP34M4SPS-13, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.6V, Minimum Gate Threshold Voltage: 1.6V, Maximum Power Dissipation: 3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Forward Diode Voltage: 1.2V

GBP 0.33
1