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DiodesZetex N-Channel MOSFET, 123 (Steady) A, 87 (State) A, 100 V, 8-Pin PowerDI5060 Diodes Inc DMTH10H010SPS-13

DiodesZetex N-Channel MOSFET, 123 (Steady) A, 87 (State) A, 100 V, 8-Pin PowerDI5060 Diodes Inc DMTH10H010SPS-13

DiodesZetex N-Channel MOSFET, 123 (Steady) A, 87 (State) A, 100 V, 8-Pin PowerDI5060 Diodes Inc DMTH10H010SPS-13, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 11.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 166 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.17
1

DiodesZetex N-Channel MOSFET, 123 (Steady) A, 87 (State) A, 100 V, 8-Pin PowerDI5060 Diodes Inc DMTH10H010SPS-13

DiodesZetex N-Channel MOSFET, 123 (Steady) A, 87 (State) A, 100 V, 8-Pin PowerDI5060 Diodes Inc DMTH10H010SPS-13

DiodesZetex N-Channel MOSFET, 123 (Steady) A, 87 (State) A, 100 V, 8-Pin PowerDI5060 Diodes Inc DMTH10H010SPS-13, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 11.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 166 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.13
1

DiodesZetex N-Channel MOSFET, 123 (Steady) A, 87 (State) A, 100 V, 8-Pin PowerDI5060 Diodes Inc DMTH10H010SPS-13

DiodesZetex N-Channel MOSFET, 123 (Steady) A, 87 (State) A, 100 V, 8-Pin PowerDI5060 Diodes Inc DMTH10H010SPS-13

DiodesZetex N-Channel MOSFET, 123 (Steady) A, 87 (State) A, 100 V, 8-Pin PowerDI5060 Diodes Inc DMTH10H010SPS-13, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 11.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 166 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.17
1