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DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC, Minimum Operating Supply Voltage: 10 V, Maximum Operating Supply Voltage: 20 V, Topology: Half Bridge, Mounting Type: Surface Mount, Peak Output Current: 290 (High) mA, 600 (Low) mA, Polarity: Non-Inverting, Input Logic Compatibility: CMOS, TTL, High and Low Sides Dependency: Independent, Dimensions: 5 x 4 x 1.55mm, Fall Time: 60ns

GBP 0.37

1

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC, Minimum Operating Supply Voltage: 10 V, Maximum Operating Supply Voltage: 20 V, Topology: Half Bridge, Mounting Type: Surface Mount, Peak Output Current: 290 (High) mA, 600 (Low) mA, Polarity: Non-Inverting, Input Logic Compatibility: CMOS, TTL, High and Low Sides Dependency: Independent, Dimensions: 5 x 4 x 1.55mm, Fall Time: 90ns

GBP 0.20

1

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC, Logic Type: CMOS, TTL, Fall Time: 90ns, Rise Time: 170ns, Topology: Half Bridge, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Surface Mount

GBP 0.20

1

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC, Logic Type: CMOS, TTL, Fall Time: 60ns, Rise Time: 120ns, Topology: Half Bridge, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Surface Mount

GBP 0.37

1

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC, Logic Type: CMOS, TTL, Fall Time: 60ns, Rise Time: 120ns, Topology: Half Bridge, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Surface Mount

GBP 0.37

1

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC, Logic Type: CMOS, TTL, Fall Time: 90ns, Rise Time: 170ns, Topology: Half Bridge, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Surface Mount

GBP 0.16

1

DiodesZetex Dual N/P-Channel MOSFET, 550 mA, 800 mA, 30 V, 6-Pin SOT-363 Diodes Inc DMC3401LDW-7

DiodesZetex Dual N/P-Channel MOSFET, 550 mA, 800 mA, 30 V, 6-Pin SOT-363 Diodes Inc DMC3401LDW-7, Channel Type: N, P, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.6V, Number of Elements per Chip: 2

GBP 0.06

1

DiodesZetex Dual N/P-Channel MOSFET, 550 mA, 800 mA, 30 V, 6-Pin SOT-363 Diodes Inc DMC3401LDW-7

DiodesZetex Dual N/P-Channel MOSFET, 550 mA, 800 mA, 30 V, 6-Pin SOT-363 Diodes Inc DMC3401LDW-7, Channel Type: N, P, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.6V, Number of Elements per Chip: 2

GBP 0.06

1

DiodesZetex N-Channel MOSFET, 325 (State) mA, 407 (Steady) mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B

DiodesZetex N-Channel MOSFET, 325 (State) mA, 407 (Steady) mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.3V

GBP 0.14

1

DiodesZetex N-Channel MOSFET, 325 (State) mA, 407 (Steady) mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B

DiodesZetex N-Channel MOSFET, 325 (State) mA, 407 (Steady) mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.3V

GBP 0.05

1

DiodesZetex N-Channel MOSFET, 325 (State) mA, 407 (Steady) mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B

DiodesZetex N-Channel MOSFET, 325 (State) mA, 407 (Steady) mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.3V

GBP 0.15

1

DiodesZetex P-Channel MOSFET, 500 (State) mA, 600 (Steady) mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7

DiodesZetex P-Channel MOSFET, 500 (State) mA, 600 (Steady) mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 800 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Forward Diode Voltage: 1.2V

GBP 0.03

1

DiodesZetex P-Channel MOSFET, 500 (State) mA, 600 (Steady) mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7

DiodesZetex P-Channel MOSFET, 500 (State) mA, 600 (Steady) mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 800 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Forward Diode Voltage: 1.2V

GBP 0.03

1

DiodesZetex P-Channel MOSFET, 500 (State) mA, 600 (Steady) mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7

DiodesZetex P-Channel MOSFET, 500 (State) mA, 600 (Steady) mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 800 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Forward Diode Voltage: 1.2V

GBP 0.05

1

DiodesZetex Dual N/P-Channel MOSFET, 190 mA, 520 mA, 20 V, 6-Pin SOT-963 Diodes Inc DMC2990UDJ-7

DiodesZetex Dual N/P-Channel MOSFET, 190 mA, 520 mA, 20 V, 6-Pin SOT-963 Diodes Inc DMC2990UDJ-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.4 Ω, 5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: +8 V, Height: 0.45mm, Length: 1.05mm

GBP 0.09

1

DiodesZetex Dual N/P-Channel MOSFET, 280 mA, 620 mA, 60 V, 6-Pin SOT-563 Diodes Inc DMG1029SV-7

DiodesZetex Dual N/P-Channel MOSFET, 280 mA, 620 mA, 60 V, 6-Pin SOT-563 Diodes Inc DMG1029SV-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.7 Ω, 6 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.6mm, Length: 1.7mm

GBP 0.11

1

DiodesZetex Dual N/P-Channel MOSFET, 190 mA, 520 mA, 20 V, 6-Pin SOT-963 Diodes Inc DMC2990UDJ-7

DiodesZetex Dual N/P-Channel MOSFET, 190 mA, 520 mA, 20 V, 6-Pin SOT-963 Diodes Inc DMC2990UDJ-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.4 Ω, 5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.45mm, Length: 1.05mm

GBP 0.29

1

DiodesZetex Dual N/P-Channel MOSFET, 190 mA, 520 mA, 20 V, 6-Pin SOT-963 Diodes Inc DMC2990UDJ-7

DiodesZetex Dual N/P-Channel MOSFET, 190 mA, 520 mA, 20 V, 6-Pin SOT-963 Diodes Inc DMC2990UDJ-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.4 Ω, 5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.45mm, Length: 1.05mm

GBP 0.29

1

DiodesZetex Dual N/P-Channel MOSFET, 280 mA, 620 mA, 60 V, 6-Pin SOT-563 Diodes Inc DMG1029SV-7

DiodesZetex Dual N/P-Channel MOSFET, 280 mA, 620 mA, 60 V, 6-Pin SOT-563 Diodes Inc DMG1029SV-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.7 Ω, 6 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.6mm, Length: 1.7mm

GBP 0.18

1

DiodesZetex Dual N/P-Channel MOSFET, 530 mA, 670 mA, 20 V, 6-Pin SOT-563 Diodes Inc DMC2004VK-7

DiodesZetex Dual N/P-Channel MOSFET, 530 mA, 670 mA, 20 V, 6-Pin SOT-563 Diodes Inc DMC2004VK-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 Ω, 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 400 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.6mm, Length: 1.7mm

GBP 0.14

1

DiodesZetex Dual N/P-Channel MOSFET, 530 mA, 670 mA, 20 V, 6-Pin SOT-563 Diodes Inc DMC2004VK-7

DiodesZetex Dual N/P-Channel MOSFET, 530 mA, 670 mA, 20 V, 6-Pin SOT-563 Diodes Inc DMC2004VK-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 Ω, 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 400 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.6mm, Length: 1.7mm

GBP 0.35

1

DiodesZetex Dual N/P-Channel MOSFET, 530 mA, 670 mA, 20 V, 6-Pin SOT-563 Diodes Inc DMC2004VK-7

DiodesZetex Dual N/P-Channel MOSFET, 530 mA, 670 mA, 20 V, 6-Pin SOT-563 Diodes Inc DMC2004VK-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 Ω, 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 400 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.6mm, Length: 1.7mm

GBP 0.29

1

DiodesZetex Dual N/P-Channel MOSFET, 280 mA, 620 mA, 60 V, 6-Pin SOT-563 Diodes Inc DMG1029SV-7

DiodesZetex Dual N/P-Channel MOSFET, 280 mA, 620 mA, 60 V, 6-Pin SOT-563 Diodes Inc DMG1029SV-7, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.7 Ω, 6 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.6mm, Length: 1.7mm

GBP 0.32

1

DiodesZetex Dual N/P-Channel MOSFET, 430 mA, 540 mA, 20 V, 6-Pin SOT-363 Diodes Inc DMC2004DWK-7

DiodesZetex Dual N/P-Channel MOSFET, 430 mA, 540 mA, 20 V, 6-Pin SOT-363 Diodes Inc DMC2004DWK-7, Channel Type: N, P, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 Ω, 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 250 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1mm, Length: 2.2mm

GBP 0.12

1

DiodesZetex Dual N/P-Channel MOSFET, 430 mA, 540 mA, 20 V, 6-Pin SOT-363 Diodes Inc DMC2004DWK-7

DiodesZetex Dual N/P-Channel MOSFET, 430 mA, 540 mA, 20 V, 6-Pin SOT-363 Diodes Inc DMC2004DWK-7, Channel Type: N, P, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 Ω, 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 250 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1mm, Length: 2.2mm

GBP 0.33

1

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DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2304S8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex DGD2104MS8-13, MOSFET 2, 290 mA, 600 mA, 20V 8-Pin, SOIC

DiodesZetex Dual N/P-Channel MOSFET, 550 mA, 800 mA, 30 V, 6-Pin SOT-363 Diodes Inc DMC3401LDW-7

DiodesZetex Dual N/P-Channel MOSFET, 550 mA, 800 mA, 30 V, 6-Pin SOT-363 Diodes Inc DMC3401LDW-7

DiodesZetex N-Channel MOSFET, 325 (State) mA, 407 (Steady) mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B

DiodesZetex N-Channel MOSFET, 325 (State) mA, 407 (Steady) mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B

DiodesZetex N-Channel MOSFET, 325 (State) mA, 407 (Steady) mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B

DiodesZetex P-Channel MOSFET, 500 (State) mA, 600 (Steady) mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7

DiodesZetex P-Channel MOSFET, 500 (State) mA, 600 (Steady) mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7

DiodesZetex P-Channel MOSFET, 500 (State) mA, 600 (Steady) mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7

DiodesZetex Dual N/P-Channel MOSFET, 190 mA, 520 mA, 20 V, 6-Pin SOT-963 Diodes Inc DMC2990UDJ-7

DiodesZetex Dual N/P-Channel MOSFET, 280 mA, 620 mA, 60 V, 6-Pin SOT-563 Diodes Inc DMG1029SV-7

DiodesZetex Dual N/P-Channel MOSFET, 190 mA, 520 mA, 20 V, 6-Pin SOT-963 Diodes Inc DMC2990UDJ-7

DiodesZetex Dual N/P-Channel MOSFET, 190 mA, 520 mA, 20 V, 6-Pin SOT-963 Diodes Inc DMC2990UDJ-7

DiodesZetex Dual N/P-Channel MOSFET, 280 mA, 620 mA, 60 V, 6-Pin SOT-563 Diodes Inc DMG1029SV-7

DiodesZetex Dual N/P-Channel MOSFET, 530 mA, 670 mA, 20 V, 6-Pin SOT-563 Diodes Inc DMC2004VK-7

DiodesZetex Dual N/P-Channel MOSFET, 530 mA, 670 mA, 20 V, 6-Pin SOT-563 Diodes Inc DMC2004VK-7

DiodesZetex Dual N/P-Channel MOSFET, 530 mA, 670 mA, 20 V, 6-Pin SOT-563 Diodes Inc DMC2004VK-7

DiodesZetex Dual N/P-Channel MOSFET, 280 mA, 620 mA, 60 V, 6-Pin SOT-563 Diodes Inc DMG1029SV-7

DiodesZetex Dual N/P-Channel MOSFET, 430 mA, 540 mA, 20 V, 6-Pin SOT-363 Diodes Inc DMC2004DWK-7

DiodesZetex Dual N/P-Channel MOSFET, 430 mA, 540 mA, 20 V, 6-Pin SOT-363 Diodes Inc DMC2004DWK-7

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