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Vishay N-CHANNEL 240-V (D-S) MOSFET

Vishay N-CHANNEL 240-V (D-S) MOSFET, MPN: TN2404K-T1-E3

GBP 0.38

1

Vishay N-CHANNEL 240-V (D-S) MOSFET

Vishay N-CHANNEL 240-V (D-S) MOSFET, MPN: TN2404K-T1-E3

GBP 0.61

1

Vishay N-CHANNEL 240-V (D-S) MOSFET

Vishay N-CHANNEL 240-V (D-S) MOSFET, MPN: TN2404K-T1-E3

GBP 0.58

1

Vishay, Radial Ceramic Capacitor Kit 240 pieces

Vishay, Radial Ceramic Capacitor Kit 240 pieces, Capacitance Range: 100 to 180000pF, Maximum Voltage: 200V, Minimum Capacitance: 100pF, Minimum Voltage: 50V, Voltage Range: 50 to 200V, MPN: HOTC-KIT-KH

GBP 43.26

1

Vishay N-Channel MOSFET, 240 mA, 60 V, 3-Pin SOT-323 SI1330EDL-T1-GE3

Vishay N-Channel MOSFET, 240 mA, 60 V, 3-Pin SOT-323 SI1330EDL-T1-GE3, Package Type: SOT-323 (SC-70), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 280 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 2.2mm

GBP 0.34

1

Vishay N-Channel MOSFET, 300 mA, 240 V, 3-Pin SOT-23 TN2404K-T1-GE3

Vishay N-Channel MOSFET, 300 mA, 240 V, 3-Pin SOT-23 TN2404K-T1-GE3, Package Type: SOT-23 (TO-236), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 510 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.02mm, Length: 3.04mm

GBP 0.59

1

Vishay N-Channel MOSFET, 300 mA, 240 V, 3-Pin SOT-23 TN2404K-T1-GE3

Vishay N-Channel MOSFET, 300 mA, 240 V, 3-Pin SOT-23 TN2404K-T1-GE3, Package Type: SOT-23 (TO-236), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 510 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.02mm, Length: 3.04mm

GBP 0.59

1

Vishay N-Channel MOSFET, 240 mA, 60 V, 3-Pin SOT-323 SI1330EDL-T1-GE3

Vishay N-Channel MOSFET, 240 mA, 60 V, 3-Pin SOT-323 SI1330EDL-T1-GE3, Package Type: SOT-323 (SC-70), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 280 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 2.2mm

GBP 0.16

1

Vishay N-Channel MOSFET, 300 mA, 240 V, 3-Pin SOT-23 TN2404K-T1-GE3

Vishay N-Channel MOSFET, 300 mA, 240 V, 3-Pin SOT-23 TN2404K-T1-GE3, Package Type: SOT-23 (TO-236), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 510 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.02mm, Length: 3.04mm

GBP 0.29

1

Vishay N-Channel MOSFET, 240 mA, 60 V, 3-Pin SOT-323 SI1330EDL-T1-GE3

Vishay N-Channel MOSFET, 240 mA, 60 V, 3-Pin SOT-323 SI1330EDL-T1-GE3, Package Type: SOT-323 (SC-70), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 280 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 2.2mm

GBP 0.40

1

Vishay, IHLP, 4040 Shielded Wire-wound SMD Inductor with a Metal Composite Core, 240 nH ±20% Wire-Wound 33A Idc

Vishay, IHLP, 4040 Shielded Wire-wound SMD Inductor with a Metal Composite Core, 240 nH ±20% Wire-Wound 33A Idc, Length: 10.92mm, Depth: 10.3mm, Height: 4mm, Dimensions: 10.92 x 10.3 x 4mm, Shielded: Yes, Maximum DC Resistance: 950µΩ, Maximum Self Resonant Frequency: 1MHz, Maximum Operating Temperature: +125°C, MPN: IHLP4040DZERR24M11

GBP 0.75

1

Vishay, IHLP-4040DZ-11, 4040 Shielded Wire-wound SMD Inductor with a Metal Composite Core, 240 nH ±20% Wire-Wound 33A

Vishay, IHLP-4040DZ-11, 4040 Shielded Wire-wound SMD Inductor with a Metal Composite Core, 240 nH ±20% Wire-Wound 33A, Length: 10.92mm, Depth: 10.3mm, Height: 4mm, Dimensions: 10.92 x 10.3 x 4mm, Shielded: Yes, Maximum DC Resistance: 950µΩ, Maximum Self Resonant Frequency: 1MHz, Maximum Operating Temperature: +125°C, MPN: IHLP4040DZERR24M11

GBP 1.22

1

Vishay 470μF Electrolytic Capacitor 50V dc, Through Hole - MAL213651471E3

Vishay 470μF Electrolytic Capacitor 50V dc, Through Hole - MAL213651471E3, Capacitance: 470µF, Dimensions: 12.5 (Dia.) x 25mm, Minimum Operating Temperature: -55°C, Diameter: 12.5mm, Maximum Operating Temperature: +105°C, Lifetime: 8000h, Leakage Current: 240 μA, Ripple Current: 1.5A, Tolerance: ±20%

GBP 1.71

1

Vishay 470μF Electrolytic Capacitor 50V dc, Through Hole - MAL204831471E3

Vishay 470μF Electrolytic Capacitor 50V dc, Through Hole - MAL204831471E3, Capacitance: 470µF, Dimensions: 12.5 (Dia.) x 20mm, Minimum Operating Temperature: -40°C, Diameter: 12.5mm, Maximum Operating Temperature: +105°C, Lifetime: 3000h, Leakage Current: 240 μA, Ripple Current: 620mA, Tolerance: ±20%

GBP 0.81

1

Vishay, CNY64ABST DC Input Phototransistor Output Dual Optocoupler, Surface Mount, 4-Pin SMD

Vishay DC Input Phototransistor Output Dual Optocoupler, Surface Mount, 4-Pin SMD, Maximum Forward Voltage: 1.6V, Number of Channels: 2, Typical Rise Time: 2.4µs, Maximum Input Current: 75 mA, Isolation Voltage: 8200 Vrms, Maximum Current Transfer Ratio: 240%, Typical Fall Time: 2.7µs, MPN: CNY64ABST

GBP 1.43

1

Vishay, CNY65ABST DC Input Phototransistor Output Dual Optocoupler, Surface Mount, 4-Pin SMD

Vishay DC Input Phototransistor Output Dual Optocoupler, Surface Mount, 4-Pin SMD, Maximum Forward Voltage: 1.6V, Number of Channels: 2, Typical Rise Time: 2.4µs, Maximum Input Current: 75 mA, Isolation Voltage: 1390 V, Maximum Current Transfer Ratio: 240%, Typical Fall Time: 2.7µs, MPN: CNY65ABST

GBP 2.17

1

Vishay, CNY65ABST DC Input Phototransistor Output Dual Optocoupler, Surface Mount, 4-Pin SMD

Vishay DC Input Phototransistor Output Dual Optocoupler, Surface Mount, 4-Pin SMD, Maximum Forward Voltage: 1.6V, Number of Channels: 2, Typical Rise Time: 2.4µs, Maximum Input Current: 75 mA, Isolation Voltage: 1.39 kVrms, Maximum Current Transfer Ratio: 240%, Typical Fall Time: 2.7µs, MPN: CNY65ABST

GBP 1.09

1

Vishay, CNY65ABST DC Input Phototransistor Output Dual Optocoupler, Surface Mount, 4-Pin SMD

Vishay DC Input Phototransistor Output Dual Optocoupler, Surface Mount, 4-Pin SMD, Maximum Forward Voltage: 1.6V, Number of Channels: 2, Typical Rise Time: 2.4µs, Maximum Input Current: 75 mA, Isolation Voltage: 1390 V, Maximum Current Transfer Ratio: 240%, Typical Fall Time: 2.7µs, MPN: CNY65ABST

GBP 1.42

1

Vishay N-Channel MOSFET, 1.7 A, 200 V, 8-Pin SOIC SI4464DY-T1-GE3

Vishay N-Channel MOSFET, 1.7 A, 200 V, 8-Pin SOIC SI4464DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.15

1

Vishay N-Channel MOSFET, 1.7 A, 200 V, 8-Pin SOIC SI4464DY-T1-GE3

Vishay N-Channel MOSFET, 1.7 A, 200 V, 8-Pin SOIC SI4464DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.66

1

Vishay N-Channel MOSFET, 1.7 A, 200 V, 8-Pin SOIC SI4464DY-T1-GE3

Vishay N-Channel MOSFET, 1.7 A, 200 V, 8-Pin SOIC SI4464DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.19

1

Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-416 SI1012CR-T1-GE3

Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-416 SI1012CR-T1-GE3, Package Type: SOT-416 (SC-75A), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.1 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 240 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.8mm, Length: 1.68mm

GBP 0.10

1

Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-416 SI1012CR-T1-GE3

Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-416 SI1012CR-T1-GE3, Package Type: SOT-416 (SC-75A), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.1 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 240 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.8mm, Length: 1.68mm

GBP 0.16

1

Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-416 SI1012CR-T1-GE3

Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-416 SI1012CR-T1-GE3, Package Type: SOT-416 (SC-75A), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.1 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 240 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.8mm, Length: 1.68mm

GBP 0.28

1

Vishay 10μF Electrolytic Capacitor 450V dc, Through Hole - MAL204217109E3

Vishay 10μF Electrolytic Capacitor 450V dc, Through Hole - MAL204217109E3, Capacitance: 10µF, Dimensions: 12.5 (Dia.) x 30mm, Minimum Operating Temperature: -40°C, Diameter: 12.5mm, Maximum Operating Temperature: +85°C, Lead Pitch: 35mm, Lifetime: 5000 h, 8000 h, 10000 h, 15000 h, 160000 h, 240000 h, Series: 042 ASH, Equivalent Series Resistance: 15Ω, Leakage Current: 110 μA, 240 μA, Ripple Current: 150mA

GBP 3.63

1

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Vishay N-CHANNEL 240-V (D-S) MOSFET

Vishay N-CHANNEL 240-V (D-S) MOSFET

Vishay N-CHANNEL 240-V (D-S) MOSFET

Vishay, Radial Ceramic Capacitor Kit 240 pieces

Vishay N-Channel MOSFET, 240 mA, 60 V, 3-Pin SOT-323 SI1330EDL-T1-GE3

Vishay N-Channel MOSFET, 300 mA, 240 V, 3-Pin SOT-23 TN2404K-T1-GE3

Vishay N-Channel MOSFET, 300 mA, 240 V, 3-Pin SOT-23 TN2404K-T1-GE3

Vishay N-Channel MOSFET, 240 mA, 60 V, 3-Pin SOT-323 SI1330EDL-T1-GE3

Vishay N-Channel MOSFET, 300 mA, 240 V, 3-Pin SOT-23 TN2404K-T1-GE3

Vishay N-Channel MOSFET, 240 mA, 60 V, 3-Pin SOT-323 SI1330EDL-T1-GE3

Vishay, IHLP, 4040 Shielded Wire-wound SMD Inductor with a Metal Composite Core, 240 nH ±20% Wire-Wound 33A Idc

Vishay, IHLP-4040DZ-11, 4040 Shielded Wire-wound SMD Inductor with a Metal Composite Core, 240 nH ±20% Wire-Wound 33A

Vishay 470μF Electrolytic Capacitor 50V dc, Through Hole - MAL213651471E3

Vishay 470μF Electrolytic Capacitor 50V dc, Through Hole - MAL204831471E3

Vishay, CNY64ABST DC Input Phototransistor Output Dual Optocoupler, Surface Mount, 4-Pin SMD

Vishay, CNY65ABST DC Input Phototransistor Output Dual Optocoupler, Surface Mount, 4-Pin SMD

Vishay, CNY65ABST DC Input Phototransistor Output Dual Optocoupler, Surface Mount, 4-Pin SMD

Vishay, CNY65ABST DC Input Phototransistor Output Dual Optocoupler, Surface Mount, 4-Pin SMD

Vishay N-Channel MOSFET, 1.7 A, 200 V, 8-Pin SOIC SI4464DY-T1-GE3

Vishay N-Channel MOSFET, 1.7 A, 200 V, 8-Pin SOIC SI4464DY-T1-GE3

Vishay N-Channel MOSFET, 1.7 A, 200 V, 8-Pin SOIC SI4464DY-T1-GE3

Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-416 SI1012CR-T1-GE3

Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-416 SI1012CR-T1-GE3

Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-416 SI1012CR-T1-GE3

Vishay 10μF Electrolytic Capacitor 450V dc, Through Hole - MAL204217109E3

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