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Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 9.89

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 10.27

1

Toshiba N-Channel MOSFET, 4 A, 30 V, 3-Pin TSM SSM3K14T(F)

Toshiba N-Channel MOSFET, 4 A, 30 V, 3-Pin TSM SSM3K14T(F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 39 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 700 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.7mm, Length: 2.9mm

GBP 0.25

1

Toshiba N-Channel MOSFET, 25 A, 600 V, 4-Pin TO-247 TK25Z60X,S1F(S

Toshiba N-Channel MOSFET, 25 A, 600 V, 4-Pin TO-247 TK25Z60X,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 180 W, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm, Maximum Operating Temperature: +150 °C, Series: DTMOSIV-H

GBP 1.87

1

Toshiba N-Channel MOSFET, 2 A, 60 V, 4-Pin PW Mini 2SK3658(TE12L,F)

Toshiba N-Channel MOSFET, 2 A, 60 V, 4-Pin PW Mini 2SK3658(TE12L,F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.6mm, Length: 4.6mm

GBP 0.19

1

Toshiba N-Channel MOSFET, 2 A, 60 V, 4-Pin PW Mini 2SK3658(TE12L,F)

Toshiba N-Channel MOSFET, 2 A, 60 V, 4-Pin PW Mini 2SK3658(TE12L,F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.6mm, Length: 4.6mm

GBP 0.24

1

Toshiba, 8 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L08F(F)

Toshiba, 8 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L08F(F), Line Regulation: 175 mV, Load Regulation: 80 mV, Mounting Type: Surface Mount, Polarity: Positive, Quiescent Current: 3.1mA, Output Type: Fixed, Power Rating: 0.5W, Dimensions: 4.6 x 2.5 x 1.6mm, Length: 4.6mm

GBP 0.28

1

Toshiba, 15 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L15F(F)

Toshiba, 15 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L15F(F), Line Regulation: 300 mV, Load Regulation: 150 mV, Mounting Type: Surface Mount, Polarity: Positive, Quiescent Current: 3.3mA, Output Type: Fixed, Power Rating: 0.5W, Dimensions: 4.6 x 2.5 x 1.6mm, Length: 4.6mm

GBP 0.28

1

Toshiba, 9 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L09F(F)

Toshiba, 9 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L09F(F), Line Regulation: 200 mV, Load Regulation: 90 mV, Mounting Type: Surface Mount, Polarity: Positive, Quiescent Current: 3.2mA, Output Type: Fixed, Power Rating: 0.5W, Dimensions: 4.6 x 2.5 x 1.6mm, Length: 4.6mm

GBP 0.31

1

Toshiba, 10 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L10F(F)

Toshiba, 10 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L10F(F), Line Regulation: 230 mV, Load Regulation: 90 mV, Mounting Type: Surface Mount, Polarity: Positive, Quiescent Current: 3.2mA, Output Type: Fixed, Power Rating: 0.5W, Dimensions: 4.6 x 2.5 x 1.6mm, Length: 4.6mm

GBP 0.31

1

Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23F SSM3J334R,LF(T

Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23F SSM3J334R,LF(T, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 136 mΩ, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +20 V, Height: 0.8mm, Length: 2.9mm

GBP 0.15

1

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.49

1

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.55

1

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.55

1

Toshiba P-Channel MOSFET, 18 A, 30 V, 8-Pin TPC8117(TE12L,Q)

Toshiba P-Channel MOSFET, 18 A, 30 V, 8-Pin TPC8117(TE12L,Q), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 0.90

1

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-346 SSM3K15F(F)

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-346 SSM3K15F(F), Package Type: SOT-346 (SC-59), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 200 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm, Length: 2.9mm

GBP 0.06

1

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-323 SSM3K15FU(F)

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-323 SSM3K15FU(F), Package Type: SOT-323 (SC-70), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.9mm, Length: 2mm

GBP 0.07

1

Toshiba P-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 2SJ305(F)

Toshiba P-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 2SJ305(F), Package Type: SOT-346 (SC-59), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 200 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm, Length: 2.9mm

GBP 0.24

1

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M, Maximum Drain Source Resistance: 2.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V

GBP 1.21

1

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M, Maximum Drain Source Resistance: 2.4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V

GBP 1.64

1

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M, Maximum Drain Source Resistance: 2.4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V

GBP 1.04

1

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M, Maximum Drain Source Resistance: 0.89 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V

GBP 1.01

1

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M, Maximum Drain Source Resistance: 0.89 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V

GBP 1.59

1

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M, Maximum Drain Source Resistance: 2.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V

GBP 1.91

1

Toshiba Dual N/P-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-563 SSM6L36FE

Toshiba Dual N/P-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-563 SSM6L36FE, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.52 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.35V, Maximum Power Dissipation: 150 mW, Maximum Gate Source Voltage: ±10 V, Height: 0.55mm, Length: 1.2mm

GBP 0.12

1

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Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O

Toshiba N-Channel MOSFET, 4 A, 30 V, 3-Pin TSM SSM3K14T(F)

Toshiba N-Channel MOSFET, 25 A, 600 V, 4-Pin TO-247 TK25Z60X,S1F(S

Toshiba N-Channel MOSFET, 2 A, 60 V, 4-Pin PW Mini 2SK3658(TE12L,F)

Toshiba N-Channel MOSFET, 2 A, 60 V, 4-Pin PW Mini 2SK3658(TE12L,F)

Toshiba, 8 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L08F(F)

Toshiba, 15 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L15F(F)

Toshiba, 9 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L09F(F)

Toshiba, 10 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L10F(F)

Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23F SSM3J334R,LF(T

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba N-Channel MOSFET, 100 A, 40 V, 8-Pin TSON TPN2R304PL

Toshiba P-Channel MOSFET, 18 A, 30 V, 8-Pin TPC8117(TE12L,Q)

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-346 SSM3K15F(F)

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-323 SSM3K15FU(F)

Toshiba P-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 2SJ305(F)

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Dual N/P-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-563 SSM6L36FE

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