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STMicroelectronics BUL39D NPN Transistor, 4 A, 450 V, 3-Pin TO-220

STMicroelectronics BUL39D NPN Transistor, 4 A, 450 V, 3-Pin TO-220

STMicroelectronics BUL39D NPN Transistor, 4 A, 450 V, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 850 V, Maximum Emitter Base Voltage: 9 V, Number of Elements per Chip: 1, Dimensions: 9.15 x 10.4 x 4.6mm, Maximum Base Emitter Saturation Voltage: 1.3 V, Maximum Collector Emitter Saturation Voltage: 1.1 V, Maximum Operating Temperature: +150 °C

GBP 0.51
1

STMicroelectronics BUL39D NPN Transistor, 4 A, 450 V, 3-Pin TO-220

STMicroelectronics BUL39D NPN Transistor, 4 A, 450 V, 3-Pin TO-220

STMicroelectronics BUL39D NPN Transistor, 4 A, 450 V, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 850 V, Maximum Emitter Base Voltage: 9 V, Number of Elements per Chip: 1, Dimensions: 9.15 x 10.4 x 4.6mm, Maximum Base Emitter Saturation Voltage: 1.3 V, Maximum Collector Emitter Saturation Voltage: 1.1 V, Maximum Operating Temperature: +150 °C

GBP 0.51
1

STMicroelectronics 2STN1550 NPN Bipolar Transistor, 10 A, 50 V, 4-Pin SOT-223

STMicroelectronics 2STN1550 NPN Bipolar Transistor, 10 A, 50 V, 4-Pin SOT-223

STMicroelectronics 2STN1550 NPN Bipolar Transistor, 10 A, 50 V, 4-Pin SOT-223, Mounting Type: Surface Mount, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 1 MHz, Dimensions: 6.7 x 3.7 x 1.8mm, Maximum Base Emitter Saturation Voltage: 1.2 V, Maximum Collector Emitter Saturation Voltage: 0.45 V, Maximum Operating Temperature: +150 °C

GBP 0.49
1

STMicroelectronics 2STF2550 PNP Bipolar Transistor, 10 A, -50 V, 4-Pin SOT-89

STMicroelectronics 2STF2550 PNP Bipolar Transistor, 10 A, -50 V, 4-Pin SOT-89

STMicroelectronics 2STF2550 PNP Bipolar Transistor, 10 A, -50 V, 4-Pin SOT-89, Mounting Type: Surface Mount, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 1 MHz, Dimensions: 4.6 x 2.6 x 1.6mm, Maximum Base Emitter Saturation Voltage: -1.2 V, Maximum Collector Emitter Saturation Voltage: -0.55 V, Maximum Operating Temperature: +150 °C

GBP 0.12
1

STMicroelectronics 2STF2550 PNP Bipolar Transistor, 10 A, -50 V, 4-Pin SOT-89

STMicroelectronics 2STF2550 PNP Bipolar Transistor, 10 A, -50 V, 4-Pin SOT-89

STMicroelectronics 2STF2550 PNP Bipolar Transistor, 10 A, -50 V, 4-Pin SOT-89, Mounting Type: Surface Mount, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 1 MHz, Dimensions: 4.6 x 2.6 x 1.6mm, Maximum Base Emitter Saturation Voltage: -1.2 V, Maximum Collector Emitter Saturation Voltage: -0.55 V, Maximum Operating Temperature: +150 °C

GBP 0.30
1

STMicroelectronics 2STN1550 NPN Bipolar Transistor, 10 A, 50 V, 4-Pin SOT-223

STMicroelectronics 2STN1550 NPN Bipolar Transistor, 10 A, 50 V, 4-Pin SOT-223

STMicroelectronics 2STN1550 NPN Bipolar Transistor, 10 A, 50 V, 4-Pin SOT-223, Mounting Type: Surface Mount, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 1 MHz, Dimensions: 6.7 x 3.7 x 1.8mm, Maximum Base Emitter Saturation Voltage: 1.2 V, Maximum Collector Emitter Saturation Voltage: 0.45 V, Maximum Operating Temperature: +150 °C

GBP 0.17
1