Renesas Electronics HFA3127BZ Pent NPN Transistor, 65 mA, 8 V, 16-Pin SOIC
Renesas Electronics HFA3127BZ Pent NPN Transistor, 65 mA, 8 V, 16-Pin SOIC, Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Isolated, Maximum Collector Base Voltage: 12 V, Maximum Emitter Base Voltage: 5.5 V, Maximum Operating Frequency: 8000 MHz, Dimensions: 1.5 x 10 x 4mm, Maximum Collector Emitter Saturation Voltage: 0.5 V, Maximum Operating Temperature: +125 °C