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Infineon IR35412MTRPBFAUMA1, 50 A, 4.25 → 16V, PQFN

GBP 2.79

1

Infineon IR35412MTRPBFAUMA1, 50 A, 4.25 → 16V, PQFN

GBP 2.09

1

Infineon IR35412MTRPBFAUMA1, 50 A, 4.25 → 16V, PQFN

GBP 2.56

1

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B

GBP 55.17

1

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

GBP 82.05

1

Infineon P-Channel MOSFET, 50 A, 40 V DPAK IPD50P04P413ATMA2

GBP 0.93

1

Infineon BGSX22G5A10E6327XTSA1 RF Switch Circuit, 10-Pin ATSLP-10-50

GBP 0.35

1

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK, MPN: IPD50N06S409ATMA2

GBP 0.36

1

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1

GBP 76.21

1

Infineon N-Channel MOSFET, 50 A, 55 V, 3-Pin DPAK IPD50N06S2L13ATMA2

GBP 1.09

1

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2

GBP 0.68

1

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 82.99

1

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Common Emitter

GBP 53.49

1

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Common Emitter

GBP 60.18

1

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 7

GBP 89.51

1

Infineon BGSX22G5A10E6327XTSA1 RF Switch Circuit, 10-Pin ATSLP-10-50

Infineon BGSX22G5A10E6327XTSA1 RF Switch Circuit, 10-Pin ATSLP-10-50, Dimensions: 1.1 x 1.5 x0.55mm, Mounting Type: Surface Mount

GBP 0.38

1

Infineon BGSX22G5A10E6327XTSA1 RF Switch Circuit, 10-Pin ATSLP-10-50

Infineon BGSX22G5A10E6327XTSA1 RF Switch Circuit, 10-Pin ATSLP-10-50, Dimensions: 1.1 x 1.5 x0.55mm, Mounting Type: Surface Mount

GBP 0.28

1

Infineon N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247, MPN: IPW60R040CFD7XKSA1

GBP 11.02

1

Infineon N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-220 IPP60R040C7XKSA1

GBP 9.98

1

Infineon BFP640FH6327XTSA1 NPN RF Bipolar Transistor, 50 mA, 4 V, 4-Pin TSFP

GBP 0.16

1

Infineon Silicon N-Channel MOSFET, 50 A, 80 V, 3-Pin DPAK IPD50N08S413ATMA1

GBP 0.41

1

Infineon N-Channel MOSFET, 50 A, 150 V, 3-Pin TO-220 IPP200N15N3GXKSA1

GBP 2.28

1

Infineon N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1

Infineon N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.96

1

Infineon N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1

Infineon N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.40

1

Infineon N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1

Infineon N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.82

1

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Infineon IR35412MTRPBFAUMA1, 50 A, 4.25 → 16V, PQFN

Infineon IR35412MTRPBFAUMA1, 50 A, 4.25 → 16V, PQFN

Infineon IR35412MTRPBFAUMA1, 50 A, 4.25 → 16V, PQFN

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

Infineon P-Channel MOSFET, 50 A, 40 V DPAK IPD50P04P413ATMA2

Infineon BGSX22G5A10E6327XTSA1 RF Switch Circuit, 10-Pin ATSLP-10-50

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK

Infineon Quad N-Channel MOSFET Module, 50 A, 1200 V Module FF23MR12W1M1B11BOMA1

Infineon N-Channel MOSFET, 50 A, 55 V, 3-Pin DPAK IPD50N06S2L13ATMA2

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B

Infineon FP50R12KT4PBPSA1 IGBT Module, 50 A 1200 V EASY2B

Infineon BGSX22G5A10E6327XTSA1 RF Switch Circuit, 10-Pin ATSLP-10-50

Infineon BGSX22G5A10E6327XTSA1 RF Switch Circuit, 10-Pin ATSLP-10-50

Infineon N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-220 IPP60R040C7XKSA1

Infineon BFP640FH6327XTSA1 NPN RF Bipolar Transistor, 50 mA, 4 V, 4-Pin TSFP

Infineon Silicon N-Channel MOSFET, 50 A, 80 V, 3-Pin DPAK IPD50N08S413ATMA1

Infineon N-Channel MOSFET, 50 A, 150 V, 3-Pin TO-220 IPP200N15N3GXKSA1

Infineon N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1

Infineon N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1

Infineon N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1

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