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Infineon TLE4961-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon TLE4961-3M, Hall Effect Sensors, 3-Pin PG-SOT23, Mounting Type: Surface Mount, Maximum Operating Supply Voltage: 32 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +170 °C, Minimum Operating Temperature: -40 °C, Height: 0.9mm, Dimensions: 2.9 x 1.3 x 0.9mm, Typical Magnetic Sensor Hysteresis: 16.2 mT, MPN: TLE49613MXTSA1

GBP 0.19

1

Infineon TLE4961-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon TLE4961-3M, Hall Effect Sensors, 3-Pin PG-SOT23, Mounting Type: Surface Mount, Maximum Operating Supply Voltage: 32 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +170 °C, Minimum Operating Temperature: -40 °C, Height: 0.9mm, Dimensions: 2.9 x 1.3 x 0.9mm, Typical Magnetic Sensor Hysteresis: 16.2 mT, MPN: TLE49613MXTSA1

GBP 0.19

1

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 32 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +170 °C, Minimum Operating Temperature: -40 °C, Height: 0.9mm, Dimensions: 2.9 x 1.3 x 0.9mm, Typical Magnetic Sensor Hysteresis: 3.2 mT, MPN: TLE49643MXTSA1

GBP 0.28

1

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 32 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +170 °C, Minimum Operating Temperature: -40 °C, Height: 0.9mm, Dimensions: 2.9 x 1.3 x 0.9mm, Typical Magnetic Sensor Hysteresis: 3.2 mT, MPN: TLE49643MXTSA1

GBP 0.49

1

Infineon TLE4961-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon TLE4961-3M, Hall Effect Sensors, 3-Pin PG-SOT23, Mounting Type: Surface Mount, Minimum Magnetic Sensor Release Point: 5 mT, Maximum Magnetic Sensor Operating Point: 11.1 mT, Minimum Operating Supply Voltage: 3 V, Maximum Operating Supply Voltage: 32 V, Length: 2.9mm, Width: 1.3mm, Height: 0.9mm, Dimensions: 2.9 x 1.3 x 0.9mm, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +170 °C, Typical Magnetic Sensor Hysteresis: 16.2 mT, MPN: TLE49613MXTSA1

GBP 0.56

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1

GBP 1.98

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1

GBP 2.19

1

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23, Magnetic Type: Unipolar, Mounting Type: Surface Mount, Minimum Magnetic Sensor Release Point: 9 mT, Maximum Magnetic Sensor Operating Point: 17.8 mT, Minimum Operating Supply Voltage: 3 V, Maximum Operating Supply Voltage: 32 V, Length: 2.9mm, Width: 1.3mm, Height: 0.9mm, Dimensions: 2.9 x 1.3 x 0.9mm, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +170 °C, Typical Magnetic Sensor Hysteresis: 3.2 mT, MPN: TLE49643MXTSA1

GBP 0.48

1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1

GBP 1.48

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.6 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 1.09

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.6 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 0.96

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.6 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 1.32

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.6 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 1.54

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.6 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 0.75

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.6 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 0.98

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Forward Diode Voltage: 1.1V

GBP 1.45

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 139 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Forward Diode Voltage: 1.1V

GBP 2.46

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 139 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Forward Diode Voltage: 1.1V

GBP 1.24

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Forward Diode Voltage: 1.1V

GBP 2.56

1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.004 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: OptiMOS

GBP 1.62

1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.004 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: OptiMOS

GBP 1.33

1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 15.95mm, Length: 10.36mm

GBP 3.28

1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 15.95mm, Length: 10.36mm

GBP 2.77

1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 15.95mm, Length: 10.36mm

GBP 2.78

1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP100N10S305AKSA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP100N10S305AKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.25mm

GBP 2.73

1

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Infineon TLE4961-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon TLE4961-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon TLE4961-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP100N10S305AKSA1

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