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Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 219 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.1mm

GBP 5.44

1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 219 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.1mm

GBP 4.62

1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 219 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.1mm

GBP 4.62

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin P/G-HSOF IAUT200N08S5N023ATMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin P/G-HSOF IAUT200N08S5N023ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0023 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: OptiMOS 5

GBP 4.51

1

Infineon N-Channel MOSFET, 300 A, 30 V, 8 + Tab-Pin HSOF IPT004N03LATMA1

Infineon N-Channel MOSFET, 300 A, 30 V, 8 + Tab-Pin HSOF IPT004N03LATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 μΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 300 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1V, Height: 2.4mm

GBP 4.92

1

Infineon N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1

Infineon N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 391 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 21.1mm, Length: 16.13mm

GBP 6.05

1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-220 IPP65R045C7XKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-220 IPP65R045C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 227 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 15.95mm, Length: 10.36mm

GBP 8.52

1

Infineon N-Channel MOSFET, 24 A, 700 V, 3-Pin TO-247 IPW65R095C7XKSA1

Infineon N-Channel MOSFET, 24 A, 700 V, 3-Pin TO-247 IPW65R095C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 95 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 5.21mm, Length: 16.13mm

GBP 4.85

1

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 IPP60R099C6XKSA1

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 IPP60R099C6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 99 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 35 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 16.15mm, Length: 10.65mm

GBP 5.19

1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 74 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 480.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm

GBP 6.09

1

Infineon N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1

Infineon N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 391 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 21.1mm, Length: 16.13mm

GBP 8.57

1

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 IPP60R099C6XKSA1

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 IPP60R099C6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 99 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 35 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 16.15mm, Length: 10.65mm

GBP 6.33

1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 74 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 480.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm

GBP 5.96

1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 74 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 480.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm

GBP 5.96

1

Infineon N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1

Infineon N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 391 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 21.1mm, Length: 16.13mm

GBP 8.32

1

Infineon N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF

Infineon N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.7mm

GBP 5.30

1

Infineon N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF

Infineon N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.7mm

GBP 5.23

1

Infineon N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF

Infineon N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 517 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.7mm

GBP 5.02

1

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-247 IPW60R099C6FKSA1

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-247 IPW60R099C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 99 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 278 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.1mm

GBP 5.42

1

Infineon N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF

Infineon N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 517 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.7mm

GBP 6.14

1

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-247 IPW60R099C6FKSA1

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-247 IPW60R099C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 99 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 278 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.1mm

GBP 5.63

1

Infineon N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF

Infineon N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 517 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.7mm

GBP 5.21

1

Infineon N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF

Infineon N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.7mm

GBP 6.06

1

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-247 IPW60R099C6FKSA1

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-247 IPW60R099C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 99 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 278 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.1mm

GBP 6.55

1

Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IPW60R160C6FKSA1

Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IPW60R160C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 160 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 176 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.1mm

GBP 4.41

1

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Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin P/G-HSOF IAUT200N08S5N023ATMA1

Infineon N-Channel MOSFET, 300 A, 30 V, 8 + Tab-Pin HSOF IPT004N03LATMA1

Infineon N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-220 IPP65R045C7XKSA1

Infineon N-Channel MOSFET, 24 A, 700 V, 3-Pin TO-247 IPW65R095C7XKSA1

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 IPP60R099C6XKSA1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1

Infineon N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 IPP60R099C6XKSA1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1

Infineon N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1

Infineon N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF

Infineon N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF

Infineon N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-247 IPW60R099C6FKSA1

Infineon N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-247 IPW60R099C6FKSA1

Infineon N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF

Infineon N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF

Infineon N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-247 IPW60R099C6FKSA1

Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IPW60R160C6FKSA1

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