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Infineon XE169FH200F100LABKXQSA1, 16bit C166 Microcontroller, XE166, 100MHz, 1.6 MB Flash, 176-Pin LQFP

Infineon XE169FH200F100LABKXQSA1, 16bit C166 Microcontroller, XE166, 100MHz, 1.6 MB Flash, 176-Pin LQFP, Mounting Type: Surface Mount, RAM Size: 112 kB, ADC Channels: 30, Typical Operating Supply Voltage: 1.5 V, ADC Resolution: 10bit, ADCs: 2 (30 x 10 bit), Data Rate: 1Mbps

GBP 14.79

1

Infineon N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247 IPZ65R045C7XKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247 IPZ65R045C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 227 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 5.21mm, Length: 16.13mm

GBP 10.52

1

Infineon N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 IPZ65R019C7XKSA1

Infineon N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 IPZ65R019C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 5.21mm, Length: 16.13mm

GBP 10.17

1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-247 IPW65R045C7FKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-247 IPW65R045C7FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 227 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 5.21mm, Length: 16.13mm

GBP 10.67

1

Infineon N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247 IPZ65R045C7XKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247 IPZ65R045C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 227 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 5.21mm, Length: 16.13mm

GBP 11.94

1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-247 IPW65R045C7FKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-247 IPW65R045C7FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 227 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 5.21mm, Length: 16.13mm

GBP 11.23

1

Infineon N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 IPW65R041CFDFKSA1

Infineon N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 IPW65R041CFDFKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1V, Height: 21.1mm, Length: 16.13mm

GBP 12.16

1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-247 IPW65R045C7FKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-247 IPW65R045C7FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 227 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 5.21mm, Length: 16.13mm

GBP 9.89

1

Infineon N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247 IPZ65R045C7XKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247 IPZ65R045C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 227 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 5.21mm, Length: 16.13mm

GBP 11.94

1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-220 IPP65R045C7XKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-220 IPP65R045C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 227 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 15.95mm, Length: 10.36mm

GBP 10.71

1

Infineon N-Channel MOSFET, 55 A, 850 V, 3-Pin TO-247 SPW55N80C3FKSA1

Infineon N-Channel MOSFET, 55 A, 850 V, 3-Pin TO-247 SPW55N80C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.95V, Height: 5.21mm, Length: 16.13mm

GBP 10.41

1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-220 IPP65R045C7XKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-220 IPP65R045C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 227 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 15.95mm, Length: 10.36mm

GBP 11.62

1

Infineon N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 IPW65R041CFDFKSA1

Infineon N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 IPW65R041CFDFKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1V, Height: 21.1mm, Length: 16.13mm

GBP 10.93

1

Infineon N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 IPZ65R019C7XKSA1

Infineon N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 IPZ65R019C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 5.21mm, Length: 16.13mm

GBP 10.34

1

Infineon N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 IPW65R041CFDFKSA1

Infineon N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 IPW65R041CFDFKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1V, Height: 21.1mm, Length: 16.13mm

GBP 12.41

1

Infineon N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 IPZ65R019C7XKSA1

Infineon N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 IPZ65R019C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 5.21mm, Length: 16.13mm

GBP 10.34

1

Infineon N-Channel MOSFET, 75 A, 700 V, 3-Pin TO-247 IPW65R019C7FKSA1

Infineon N-Channel MOSFET, 75 A, 700 V, 3-Pin TO-247 IPW65R019C7FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 5.21mm, Length: 16.13mm

GBP 16.53

1

Infineon N-Channel MOSFET, 83 A, 700 V, 3-Pin TO-247 IPW65R037C6FKSA1

Infineon N-Channel MOSFET, 83 A, 700 V, 3-Pin TO-247 IPW65R037C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 37 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.85V

GBP 13.41

1

Infineon N-Channel MOSFET, 83 A, 700 V, 3-Pin TO-247 IPW65R037C6FKSA1

Infineon N-Channel MOSFET, 83 A, 700 V, 3-Pin TO-247 IPW65R037C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 37 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.85V

GBP 11.50

1

Infineon N-Channel MOSFET, 83 A, 700 V, 3-Pin TO-247 IPW65R037C6FKSA1

Infineon N-Channel MOSFET, 83 A, 700 V, 3-Pin TO-247 IPW65R037C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 37 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.85V

GBP 15.37

1

Infineon N-Channel MOSFET, 56 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R030M1HXKSA1

Infineon N-Channel MOSFET, 56 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R030M1HXKSA1, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 10.45

1

Infineon N-Channel MOSFET, 56 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R030M1HXKSA1

Infineon N-Channel MOSFET, 56 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R030M1HXKSA1, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 15.82

1

Infineon XE169FH200F100LABKXQSA1, 16bit C166 Microcontroller, XE166, 100MHz, 1.6 MB Flash, 176-Pin LQFP

Infineon XE169FH200F100LABKXQSA1, 16bit C166 Microcontroller, XE166, 100MHz, 1.6 MB Flash, 176-Pin LQFP, Mounting Type: Surface Mount, RAM Size: 112 kB, Typical Operating Supply Voltage: 1.5 V, ADCs: 30 x 10 bit, Data Rate: 1Mbps, Dimensions: 24 x 24 x 1.4mm

GBP 15.89

1

Infineon XE169FH200F100LABKXQSA1, 16bit C166 Microcontroller, XE166, 100MHz, 1.6 MB Flash, 176-Pin LQFP

Infineon XE169FH200F100LABKXQSA1, 16bit C166 Microcontroller, XE166, 100MHz, 1.6 MB Flash, 176-Pin LQFP, Mounting Type: Surface Mount, RAM Size: 112 kB, Typical Operating Supply Voltage: 1.5 V, ADCs: 30 x 10 bit, Data Rate: 1Mbps, Dimensions: 24 x 24 x 1.4mm

GBP 16.32

1

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Infineon XE169FH200F100LABKXQSA1, 16bit C166 Microcontroller, XE166, 100MHz, 1.6 MB Flash, 176-Pin LQFP

Infineon N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247 IPZ65R045C7XKSA1

Infineon N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 IPZ65R019C7XKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-247 IPW65R045C7FKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247 IPZ65R045C7XKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-247 IPW65R045C7FKSA1

Infineon N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 IPW65R041CFDFKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-247 IPW65R045C7FKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247 IPZ65R045C7XKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-220 IPP65R045C7XKSA1

Infineon N-Channel MOSFET, 55 A, 850 V, 3-Pin TO-247 SPW55N80C3FKSA1

Infineon N-Channel MOSFET, 46 A, 700 V, 3-Pin TO-220 IPP65R045C7XKSA1

Infineon N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 IPW65R041CFDFKSA1

Infineon N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 IPZ65R019C7XKSA1

Infineon N-Channel MOSFET, 68 A, 700 V, 3-Pin TO-247 IPW65R041CFDFKSA1

Infineon N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 IPZ65R019C7XKSA1

Infineon N-Channel MOSFET, 75 A, 700 V, 3-Pin TO-247 IPW65R019C7FKSA1

Infineon N-Channel MOSFET, 83 A, 700 V, 3-Pin TO-247 IPW65R037C6FKSA1

Infineon N-Channel MOSFET, 83 A, 700 V, 3-Pin TO-247 IPW65R037C6FKSA1

Infineon N-Channel MOSFET, 83 A, 700 V, 3-Pin TO-247 IPW65R037C6FKSA1

Infineon N-Channel MOSFET, 56 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R030M1HXKSA1

Infineon N-Channel MOSFET, 56 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R030M1HXKSA1

Infineon XE169FH200F100LABKXQSA1, 16bit C166 Microcontroller, XE166, 100MHz, 1.6 MB Flash, 176-Pin LQFP

Infineon XE169FH200F100LABKXQSA1, 16bit C166 Microcontroller, XE166, 100MHz, 1.6 MB Flash, 176-Pin LQFP

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