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Infineon BGS12SN6E6327XTSA1 RF Switch, 6-Pin TSNP-6-2

GBP 0.18

1

Infineon BGS12SN6E6327XTSA1 RF Switch, 6-Pin TSNP-6-2

Infineon BGS12SN6E6327XTSA1 RF Switch, 6-Pin TSNP-6-2, Mounting Type: Surface Mount

GBP 0.21

1

Infineon 1EDN7511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2

GBP 0.47

1

Infineon 1EDN8511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2

GBP 0.47

1

Infineon 1EDN7511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2

Infineon 1EDN7511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2, Logic Type: CMOS, Fall Time: 4.5ns

GBP 0.51

1

Infineon 1EDN7511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2

Infineon 1EDN7511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2, Logic Type: CMOS, Fall Time: 4.5ns

GBP 0.32

1

Infineon 1EDN8511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2

Infineon 1EDN8511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2, Logic Type: CMOS, Fall Time: 4.5ns

GBP 0.51

1

Infineon 1EDN8511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2

Infineon 1EDN8511BXUSA1, 8 A, 4.2V 6-Pin, PG-SOT23-6-2, Logic Type: CMOS, Fall Time: 4.5ns

GBP 0.32

1

Infineon N-Channel MOSFET, 15 A, 75 V, 6-Pin MG-WDSON-2 BSF450NE7NH3XUMA1

GBP 1.23

1

Infineon AUIRB24427STR, MOSFET 2, 6 A, 24V 8-Pin, SOIC

Infineon AUIRB24427STR, MOSFET 2, 6 A, 24V 8-Pin, SOIC, Logic Type: CMOS, TTL, Fall Time: 33ns, Topology: Low Side, Polarity: Non-Inverting, Mounting Type: Surface Mount, Height: 1.6mm, Length: 4.9mm

GBP 1.42

1

Infineon AUIRB24427STR, MOSFET 2, 6 A, 24V 8-Pin, SOIC

Infineon AUIRB24427STR, MOSFET 2, 6 A, 24V 8-Pin, SOIC, Logic Type: CMOS, TTL, Fall Time: 33ns, Topology: Low Side, Polarity: Non-Inverting, Mounting Type: Surface Mount, Height: 1.6mm, Length: 4.9mm

GBP 1.40

1

Infineon N-Channel MOSFET, 15 A, 75 V, 6-Pin MG-WDSON-2 BSF450NE7NH3XUMA1

Infineon N-Channel MOSFET, 15 A, 75 V, 6-Pin MG-WDSON-2 BSF450NE7NH3XUMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.045 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: OptiMOS

GBP 0.61

1

Infineon N-Channel MOSFET, 15 A, 75 V, 6-Pin MG-WDSON-2 BSF450NE7NH3XUMA1

Infineon N-Channel MOSFET, 15 A, 75 V, 6-Pin MG-WDSON-2 BSF450NE7NH3XUMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.045 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: OptiMOS

GBP 1.34

1

Infineon AUIRB24427STR, MOSFET 2, 6 A, 24V 8-Pin, SOIC

Infineon AUIRB24427STR, MOSFET 2, 6 A, 24V 8-Pin, SOIC, Minimum Operating Supply Voltage: 12.5 V, Maximum Operating Supply Voltage: 24 V, Topology: Low Side, Mounting Type: Surface Mount, Peak Output Current: 6A, Polarity: Non-Inverting, Input Logic Compatibility: CMOS, TTL, Dimensions: 4.9 x 3.9 x 1.6mm, Fall Time: 33ns, Length: 4.9mm

GBP 1.42

1

Infineon P-Channel MOSFET, 6 A, 20 V, 6-Pin TSOP6 BSL207SPH6327XTSA1

Infineon P-Channel MOSFET, 6 A, 20 V, 6-Pin TSOP6 BSL207SPH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.2V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 12 V, Forward Diode Voltage: 1.3V

GBP 0.34

1

Infineon P-Channel MOSFET, 6 A, 20 V, 6-Pin TSOP6 BSL207SPH6327XTSA1

Infineon P-Channel MOSFET, 6 A, 20 V, 6-Pin TSOP6 BSL207SPH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.2V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 12 V, Forward Diode Voltage: 1.3V

GBP 0.52

1

Infineon P-Channel MOSFET, 6 A, 20 V, 6-Pin TSOP6 BSL207SPH6327XTSA1

Infineon P-Channel MOSFET, 6 A, 20 V, 6-Pin TSOP6 BSL207SPH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.2V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 12 V, Forward Diode Voltage: 1.3V

GBP 0.39

1

Infineon Dual P-Channel MOSFET, 2 A, 30 V, 6-Pin TSOP BSL308PEH6327XTSA1

Infineon Dual P-Channel MOSFET, 2 A, 30 V, 6-Pin TSOP BSL308PEH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 130 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.1V

GBP 0.51

1

Infineon Dual P-Channel MOSFET, 2 A, 30 V, 6-Pin TSOP BSL308PEH6327XTSA1

Infineon Dual P-Channel MOSFET, 2 A, 30 V, 6-Pin TSOP BSL308PEH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 130 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.1V

GBP 0.54

1

Infineon Dual P-Channel MOSFET, 2 A, 30 V, 6-Pin TSOP BSL308PEH6327XTSA1

Infineon Dual P-Channel MOSFET, 2 A, 30 V, 6-Pin TSOP BSL308PEH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 130 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.1V

GBP 0.24

1